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  • 11
    Electronic Resource
    Electronic Resource
    The Interfacial Diffusion Zone in Magnetron Sputtered Ni-Ti Thin Films Deposited on Different Si Substrates Studied by HR-TEM (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 587-588 (June 2008), p. 820-823 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Ni-Ti Shape Memory Alloy thin films are suitable materials for microelectromechanicaldevices. During the deposition of Ni-Ti thin films on Si substrates, there exist interfacial diffusionand chemical interactions at the interface due to the high temperature processing necessary tocrystallize the film. For the present study, Ni-Ti thin films were prepared by magnetron cosputteringfrom Ni-Ti and Ti targets in a specially designed chamber mounted on the 6-circlegoniometer of the ROssendorf BeamLine (ROBL-CRG) at ESRF, Grenoble (France). The objectiveof this study has been to investigate the interfacial structure resulting from depositions (at atemperature of ≈ 470°C) on different substrates: naturally oxidized Si(100), Si(111) and poly-Sisubstrates. A detailed High-Resolution TEM analysis of the interfacial structure has beenperformed. When Ni-Ti is deposited on Si(100) substrate, a considerable diffusion of Ni into thesubstrate takes place, resulting in the growth of semi-octaeder A-NiSi2 silicide. In the case of Ni-Tideposited on Si(111), there appears an uniform thickness plate, due to the alignment betweensubstrate orientation and the [111]-growth front. For Ni-Ti deposited on poly-Si, the diffusion isinhomogeneous. Preferential diffusion is found along the columnar grains of poly-Si, which arefavourably aligned for Ni diffusion. These results show that for the Ni-Ti/Si system, the morphologyof the diffusion interface is strongly dependent on the type of substrates
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/19/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.587-588.820.pdf
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  • 12
    Electronic Resource
    Electronic Resource
    Defect Engineering in Ion Beam Synthesis of SiC and SiO〈sub〉2〈/sub〉 in Si (2005)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 108-109 (Dec. 2005), p. 321-326 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: Different methods of defect engineering are applied in this study for ion beam synthesis of a buried layer of SiC and SiO2 in Si. The initial state of phase formation is investigated by implantation of relatively low ion fluences. He-induced cavities and Si ion implantation generated excess vacancies are intentionally introduced in the Si substrate in order to act as trapping centers for C and O atoms and to accommodate volume expansion due to SiC and SiO2 phase formation. Especially the simultaneous dual implantation is shown to be an effective method to achieve better results from ion beam synthesis at implantation temperatures above 400oC. For SiC synthesis it is the only successful way to introduce vacancy defects. The “in situ” generation of vacancies during implantation increases the amount of SiC nanoclusters and improves crystal quality of Si in the case of SiO2 synthesis. Also the pre-deposition of He-induced cavities is clearly advantageous for the formation of a narrow SiO2 layer. Moreover, in-diffusion of O by surface oxidation can substitute a certain fraction of the O ion fluence necessary to obtain a buried homogeneous SiO2 layer.The results show that defect engineering for SiC and SiO2 synthesis is working. However, the implementation of a single action is not sufficient to achieve a significant improvement of ion beam synthesis. Only an optimized combination of the different versions of defect engineering can bring about pronounced better results
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/21/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.108-109.321.pdf
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  • 13
    Electronic Resource
    Electronic Resource
    Electrical and microstructural properties of highly boron-implantation doped 6H–SiC (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3162-3167 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron was implanted with four energies and doses at 400 °C into 6H–SiC epilayers to form a 500 nm thick doped layer with a mean concentration between 1×1018 and 1.5×1021 cm−3. Two annealing techniques were used: furnace and flash lamp annealing. The electrical and microstructural effects were investigated using temperature dependent Hall measurements, cross sectional electron microscopy, and secondary ion mass spectrometry. During the annealing two competing processes occurred: boron outdiffusion and growth of boron containing precipitates. The efficiency of these individual processes is different for varying dopant concentrations as well as annealing techniques. After furnace annealing at temperatures between 1550 and 1750 °C and for a mean boron concentration of 5×1019 cm−3 boron containing clusters are found mainly around the region of the three deeper implantation peaks. In the surface region boron outdiffusion is observed adjusting a concentration of 1.5×1019 cm−3. Using flash lamp annealing, the outdiffusion is negligible. For high dopant concentrations (1.5×1021 cm−3) the growth of random distributed boron precipitates is the dominating effect independent of the used annealing techniques. The electrical activation is limited due to the solubility of boron in SiC. After furnace annealing Hall effect measurements show a maximum hole concentration of about 2×1016 cm−3 for the boron concentration of about 5×1018 cm−3. Alternative to the furnace annealing, the electrical properties after flash lamp annealing at about 2000 °C, 20 ms show a slight enhancement of the maximum hole concentration for boron concentrations 〈3×1020 cm−3. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1333743
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  • 14
    Electronic Resource
    Electronic Resource
    Trans-projected-range gettering of copper in high-energy ion-implanted silicon (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6934-6936 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strong gettering of Cu atoms beyond the projected ion range RP has been found in single-crystal Si implanted with P+ and As+ ions at MeV energies. We call this phenomenon the "trans-RP effect." The formation of a separate Cu gettering band below RP, as detected by secondary ion mass spectrometry, indicates the presence of a significant amount of defects therein. These defects have not been detected by transmission electron microscopy and we suggest that they are small interstitial clusters. The amount of Cu atoms gettered beyond RP is, particularly for the P implants, much greater than that in the gettering layer at RP, indicating that the gettering ability of the point defects beyond RP is higher than that of the extended defects at RP. A mechanism responsible for their formation and clustering in the trans-RP region is proposed, and an explanation is given of the differences in the results for the P and As implants. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1311823
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  • 15
    Electronic Resource
    Electronic Resource
    High-energy ion-implantation-induced gettering of copper in silicon beyond the projected ion range: The trans-projected-range effect (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5645-5652 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Five different species, namely B, Si, P, Ge, and As, were implanted at MeV energies into (100)-oriented n-type Czohralski Si, in order to form deep gettering layers during the subsequent annealing. Then the samples were contaminated with Cu by implanting the impurity on the backface and performing additional annealing. The resulting Cu depth distributions were measured by secondary ion mass spectrometry. Strong gettering of Cu atoms beyond the projected ion range RP and formation of a well-defined separate Cu gettering band therein is found for P and As implants. We call this phenomenon the "trans-RP effect." It arises from the presence of a significant amount of defects in the regions much deeper than RP. Their gettering ability is higher than that of the extended defects around RP, as the amount of Cu atoms gettered beyond RP is, especially for the P implants, much greater than that in the implanted gettering layer at RP. These deep defects have not been detected by transmission electron microscopy, and we suggest that they are small interstitial clusters. A mechanism responsible for the migration of self-interstitials from RP into the trans-RP region and their clustering therein is proposed. An explanation is given of the possible reasons for the differences in the results for the P+ and As+ implants. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1316054
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  • 16
    Electronic Resource
    Electronic Resource
    Structural relation between Si and SiC formed by carbon ion implantation (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1287-1292 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of crystalline SiC by implantation of C ions into silicon is not a single-step process. The implantation results in an elastic distortion of the Si matrix lattice and in the formation of crystalline SiC particles, depending on ion fluence and thermal conditions during implantation and postannealing. The growth of the SiC particles in the Si matrix was studied with various synchrotron x-ray scattering techniques and high-resolution transmission electron microscopy. Crystallites of the 3C–SiC polytype are formed in a buried layer. Three groups of crystallites with different orientation relative to the Si matrix are found: with a random orientation like in a powder material, with a fiber texture axis parallel to the surface normal, and completely aligned to the Si matrix lattice due to a partially coherent growth of SiC in the Si matrix. The thermal treatment favors the growth of highly oriented material: a higher implantation temperature is more efficient than a postimplantation treatment even at higher temperatures.© 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1428105
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  • 17
    Electronic Resource
    Electronic Resource
    Low-resistivity, p-type SiC layers produced by Al implantation and ion-beam-induced crystallization (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 70-72 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-resistivity (〈0.1 Ω cm), p-type SiC layers of about 500 nm width and targeted acceptor concentrations of 1.5×1020 cm−3 and 5.0×1020 cm−3 were produced by the combination of high-dose (1.0 and 3.3×1016 cm−2), multienergy (50–450 keV) Al+ ion implantation of 6H-SiC at −130 °C, ion-beam-induced crystallization with 500 keV, 5×1015 Si+ cm−2 at 500 °C and subsequent furnace annealing at 1500 °C for 10 min. The implanted SiC layers have a nanocrystalline structure consisting of randomly oriented grains of mainly 3C-SiC. The electrical properties of the doped, nanocrystalline layers were investigated by sheet resistance and Hall measurements in dependence on temperature and compared with results from single-crystalline reference samples. In comparison with the standard doping process, the hole concentration at 50 °C is enhanced by more than one order of magnitude from 9.0×1017 cm−3 to 1.6×1019 cm−3 in the case of 1.5×1020 Al cm−3 and from 6.1×1018 cm−3 to 8.0×1019 cm−3 in the case of 5.0×1020 Al cm−3, respectively. It can be speculated that the loss of active Al acceptors by precipitation is reduced in the nanocrystalline layers and, therefore, the critical concentration for the formation of an impurity band can be achieved. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1490145
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  • 18
    Electronic Resource
    Electronic Resource
    Impurity gettering by high-energy ion implantation in silicon beyond the projected range (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3467-3469 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep gettering layers have been formed in Si wafers by MeV implantation of Si+ and P+ ions, followed by annealing. Samples have been subsequently contaminated with Cu. Secondary ion mass spectrometry analysis reveals for P implants gettering of Cu atoms in regions significantly deeper than the projected ion range RP and formation of a separate Cu gettering band there. We call this phenomenon the "trans-RP effect." The results obtained indicate the presence of an appreciable amount of defects in the region beyond RP. Their gettering ability is much higher than that of the implanted gettering layer at RP. The size of these deep defects is below the resolution limit of transmission electron microscopy. We suggest that they are interstitials and/or small interstitial clusters. An explanation of the mechanism responsible for their migration from RP into the trans-RP region and their clustering is proposed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125298
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  • 19
    Electronic Resource
    Electronic Resource
    Overpressurized bubbles versus voids formed in helium implanted and annealed silicon (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 732-734 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of helium induced cavities in silicon is studied as a function of implant energy (10 and 40 keV) and dose (1×1015, 1×1016, and 5×1016 cm−2). Specimens are analyzed after annealing (800 °C, 10 min) by transmission electron microscopy (TEM) and elastic recoil detection (ERD). Cavity nucleation and growth phenomena are discussed in terms of three different regimes depending on the implanted He content. For the low (1×1015 cm−2) and high (5×1016 cm−2) doses our results are consistent with the information in the literature. However, at the medium dose (1×1016 cm−2), contrary to the gas release calculations which predict the formation of empty cavities, ERD analysis shows that a measurable fraction of the implanted He is still present in the annealed samples. In this case TEM analyses reveal that the cavities are surrounded by a strong strain field contrast and dislocation loops are generated. The results obtained are discussed on the basis of an alternative nucleation and growth behavior that allows the formation of bubbles in an overpressurized state irrespective of the competition with the gas release process. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118251
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  • 20
    Electronic Resource
    Electronic Resource
    Properties of Cu-W Functionally Graded Materials Produced by Segregation and Infiltration (2005)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 492-493 (Aug. 2005), p. 123-128 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The Cu/W functionally graded material (FGM) was produced by vibration of Wagglomerates in order to obtain the W skeleton with a gradient in porosity, which after pressureless sintering was infiltrated with molten Cu. Certain sintering mechanisms are suggested for these complex W structures. The segregation of two different sizes of W agglomerates was controlled by vibration time. Different vibration duration resulted in different types of microstructure: skeleton type microstructure after shorter vibration time and graded type microstructure after extended vibration times. The final Cu-infiltrated FGMs were characterized microstructurally and theirelectrical resistivity (r) was measured using the 4-probe technique. The values of r were in between those for pure W and Cu, depending strongly on the vibration times of the initial W agglomerates, and exhibiting particular r vs. T (K) behavior
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/10/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.492-493.123.pdf
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