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  • 11
    Electronic Resource
    Electronic Resource
    Intrinsic and extrinsic surface states of single crystalline SrTiO3 (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2123-2126 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have no evidence of intrinsic surface states in the band gap for in situ fractured SrTiO3:La, SrTiO3:Nb and SrTiO3. The valence band maximum of the samples lie at 3.3 eV below the Fermi level, indicating that the band bending is negligibly small. No emission from the region of bulk band gap indicated that the intrinsic surface states are largely empty. Ar+ ion bombardment of in situ fractured samples gave rise to a peak at around 11.6 eV, indicating the Ti+3 state. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368273
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  • 12
    Electronic Resource
    Electronic Resource
    Interfacial solid-state reaction at thermally oxidized In1−xGaxAsyP1−y alloys (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 184-187 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interfacial reaction between thermally oxidized In1−xGaxAsyP1−y and an In1−xGaxAsyP1−y epilayer was studied using Raman and x-ray photoelectron spectroscopy (XPS) analyses. In Raman spectra, it was found that the appearance of the phonon modes, i.e., the first-order longitudinal (LO) and transverse-optical (TO) modes for crystalline arsenic, was due to the In1−xGaxAsyP1−y -oxide interfacial reaction. The XPS analyses showed that this reaction corresponded to the GaAs-oxide interfacial reaction, i.e., As2O3+2GaAs→Ga2O3+4As. Furthermore, the reaction depends on the composition y of In1−xGaxAsyP1−y, which may be due to the enhancement in the initial transient reaction by thermal damage of In1−xGaxAsyP1−y occurring at the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341460
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  • 13
    Electronic Resource
    Electronic Resource
    CuInSe2 homojunction diode fabricated by phosphorus doping (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1656-1657 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homojunction diodes were fabricated by doping of phosphorus to n-type Cu-In-Se thin films. The junction prepared by P implantation at the energy of 50 keV with the dose of 1×1015 ions/cm2 showed a rectification ratio of more than 100. Conduction in Cu-In-Se thin films, whose crystal structure is of the chalcopyrite type, changes from n- to p-type in such a way that group V elements (N, P, Sb, or Bi) substitute for Se in the film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108617
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  • 14
    Electronic Resource
    Electronic Resource
    Nitrogen implantation for molecular beam deposited CuInSe2 thin films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1749-1751 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have implanted N+ ions at an accelerating voltage of 10 kV and a dose of 5×1017 ions cm−2 in molecular beam deposited stoichiometric CuInSe2 thin films at various substrate temperatures (380, 515, 600, and 720 K). The conduction type of the films changed from n to p type when the substrate temperature was below 515 K during implantation. The conduction type was n type when the film temperature during implantation was above 600 K. The resistivity measured at 300 K was 1.07×104, 0.417, 0.653, 160, and 121 Ω cm for the films before implantation, implanted at 380, 515, 600, and 720 K, respectively. Both the conduction type and the resistivity of the films could be changed by N+ doping. Fabrication of homojunction diodes may be achieved in n-type CuInSe2 films by using the low energy nitrogen ion implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106239
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  • 15
    Electronic Resource
    Electronic Resource
    Enhanced conductivity of zinc oxide thin films by ion implantation of hydrogen atoms (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2876-2878 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Enhancement of the conductivity of zinc oxide through doping with hydrogen atoms was examined by using ion implantation of highly resistive thin films deposited by rf magnetron sputtering at room temperature. With a doping of 1×1017 atoms cm−2, the conductivity after annealing at 200 °C in an N2 atmosphere at 1 atm rose from the initial 1×10−7 Ω−1 cm−1 to 5.5×102 Ω−1 cm−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111401
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  • 16
    Electronic Resource
    Electronic Resource
    Optical and dielectric properties of quantum-confined SrBi2Ta2O9 mesocrystals (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3189-3191 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an increase in optical absorption peak energy from 3.9 to 5.3 eV, and a lowering of dielectric constant maximum temperature from 320 to 180 °C for SrBi2Ta2O9 mesocrystals. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125273
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  • 17
    Electronic Resource
    Electronic Resource
    Magnetic properties of CoII mesoclusters (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1194-1196 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Clusters of cobalt (II) ions dispersed in a mesoporous silicate, prepared by calcination of the MCM-41 molecular sieve soaked in CoCl2 0.01 mol/l aqueous solution, showed no x-ray diffraction peaks except one from the molecular sieve. X-ray photoelectron spectroscopy and ultraviolet-visible diffuse reflectance spectroscopy revealed that the mesoclusters consisted of CoII ions in tetrahedral coordination. We have observed temperature and frequency dependences of the alternating current susceptibility, and no divergent peaks of the nonlinear susceptibility due to superparamagnetism. Spins derived from the field dependent magnetization above the blocking temperature with the Langevin equation fairly agree with those at the cluster surface estimated from the ionic radii of Co2+ and O2−. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289654
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  • 18
    Electronic Resource
    Electronic Resource
    Co-incorporation effects of O and Na with CulnS2 thin films (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2713-2715 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using x-ray photoelectron spectroscopy we have examined changes in the electronic structure of CuInS2 thin films with co-incorporation of O and Na that raised up the photovoltaic performance of CdS/CuInS2 solar cells. The electron binding energies of both the core levels and valence band for the film with the co-incorporation were smaller by 0.9 eV than those for the film without the co-incorporation. For the co-incorporated film an increase in the spectral intensity of the valence band was observed below 1–6 eV from the Cu 3d10 nonbonding states, and it was due to both the Na s, p-S p hybridization and the In s-Op hybridization. The surface of the co-incorporated film can be expressed as (Cu, Na)In(S, O)2. The (Cu, Na)In(S, O)2 phase is related to the enlarged open-circuit voltage (0.75 eV) of n-CdS/p-CuInS2 solar cells. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1320014
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  • 19
    Electronic Resource
    Electronic Resource
    X-Ray and UV-Light Irradiation Effects on Oxide Superconducting Thin Films (1993)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 137-139 (Aug. 1993), p. 153-164 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/00/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.137-139.153.pdf
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  • 20
    Electronic Resource
    Electronic Resource
    Catalytic properties and surface states of La1−x (Th, Sr) x CoO3 (1987)
    Springer
    Journal of materials science 22 (1987), S. 3781-3783 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The surface chemical states of the perovskite-type thorium- or strontium-doped lanthanum cobalt oxides (La1−x Th x CoO3, La1−x Sr x CoO3) have been investigated using X-ray photoelectron spectroscopy. Catalytic oxidations of CO have been also investigated by flow methods. The ionicity between cobalt and lattice oxygen was increased by substituting thorium for lanthanum, and had a peak atx = 0.02. The catalytic activity also had a peak atx = 0.02. However, the ionicity decreased for the case of strontium substitution, and the activity also decreased.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01161494
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