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  • 11
    Electronic Resource
    Electronic Resource
    The correlation between strain and electronic structure in monolayer thick films (1988)
    Springer
    The European physical journal 73 (1988), S. 247-255 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We explote and empirical relationship between strain (and lattice constant) and the valence electronic structure for mercury, bromine and iron overlayers. These overlayers have a range of lattice constants. For the Hg overlayers, all share a common cubic crystallography. We generally observe that the smaller the overlayer lattice constant, the greater the energy separation betweend-bands (Hg and Fe) orp-bands (Br). These results have important implications in relating electronic structure to fundamental properties such as magnetism. In addition, the film thickness limits for pseudomorphic growth calculated from the bulk properties are consistent with the experimental studies of Hg pseudomorphic growth on Ag (100) at 90 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01305743
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  • 12
    Electronic Resource
    Electronic Resource
    The influence of chemical environment upon the mercury 5d electronic structure (1990)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 15 (1990), S. 163-166 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: We have investigated one and two monolayers of Hg adsorbed on Cu(100) by angle-resolved photoemission. The electronic structure of one monolayer of Hg on Cu(100) is very similar to that of the free atom. Two monolayers of Hg on Cu(100) has an electronic structure that closely resembles that of bulk Hg. These results are compared to those obtained for Hg overlayers on Ag(100). We have also observed that the shallow 5d core levels of the first monolayer of Hg shift by 0.38 ± 0.05 eV to greater binding energy following the adsorption of the second monolayer of Hg.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740150217
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