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  • 11
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 96 (1992), S. 782-790 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 731-738 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The heterointerface p-CuInSe2/CdS was investigated by soft x-ray photoelectron spectroscopy. CdS was deposited sequentially in steps onto CuInSe2 (011) cleavage planes at room temperature (RT) and at elevated temperatures ((approximately-greater-than)120 °C). At RT a nonreactive interface to cubic CdS is formed. The valence band and conduction-band discontinuities are determined to be 0.8 and 0.7 eV, respectively. A band bending of 0.9 eV is deduced for the p-type substrate. Annealing to temperatures above 120 °C leads to the formation of a CuxS reactive layer at the interface. As a consequence the valence-band offset and band bending is found to be considerably reduced. The experimentally determined band energy diagram is in agreement with heterojunctions of zincblende-type semiconductors, and its consequences for solar cells are discussed. © 1995 American Institute of Physics.
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  • 13
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5800-5808 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature dependent contactless surface photovoltage measurements by photoelectron spectroscopy have been performed on cleaved (100) surfaces of pyrite (FeS2) single crystals. The results have been fitted by thermionic emission, recombination, and tunneling models for the majority carrier transport to the surface. Neither of them is able to explain the small photovoltages consistently. By calculating electronic defect levels due to the sulfur deficiency of pyrite a high number of defect states in the band gap is obtained. As a consequence a nonuniform depletion layer is expected with a part of the band bending potential falling off at a very small distance near the surface. The small photovoltages can be explained by a tunneling of majority carriers through the narrow barrier and by recombination losses due to the defects.
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  • 14
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 94 (1990), S. 8012-8013 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7805-7813 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial GaSe films have been prepared on WSe2 (0001) substrates with 14% lattice mismatch and characterized by photoelectron spectroscopy, electron diffraction, and ex situ by tunneling microscopy. The films grow in the Frank–van der Merve growth mode. The best films with perfect azimuthal orientation are formed after an annealing step at 720 K. The basic mechanisms of this van der Waals epitaxy are qualitatively discussed in terms of thermodynamic and kinetic parameters.
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  • 16
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7806-7809 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The valence band spectra of a vacuum cleaved CuInSe2 (011) surface were measured with synchrotron radiation at photon energies between 16 and 95 eV. The strong dependence of the photoionization cross section of atomic levels between 28 and 60 eV is used to divide the valence band emissions into contributions from Se 4p and Cu 3d states in order to map the respective partial density of states. The derived partial density of Cu 3d states to the total valence band density of states is around 50% in the upper part of the valence band and about 75% at its maximum corresponding to non-bonding Cu d states. © 1997 American Institute of Physics.
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  • 17
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7814-7820 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The junction properties of GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy have been characterized by photoelectron spectroscopy and surface photovoltage measurements (SPV). The surfaces of p-WSe2 substrates doped with Se excess convert to n doping during annealing at T≥720 K, leading to a SPV of 330 mV. Deposited p GaSe forms an n-p heterodiode opposing the p-n homodiode within the substrate. Promising results are obtained for n-WSe2/p-GaSe heterointerfaces with SPV of at least 0.3 eV. The valence band and conduction band offsets are 0.6 and 0.2±0.1 eV, respectively, in accordance with the Anderson model of heterojunction formation.
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  • 18
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6550-6556 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A quantum well composed of layered semiconductors and SnSe2 (Eg=1.03 eV) and SnS2 (Eg=2.18 eV) was grown in several steps by van der Waals epitaxy. After each growth step the electronic structure was characterized by ultraviolet and x-ray photoemission spectroscopy. From these measurements, bandbending and the valence-band offset were determined on both sides of the quantum well. The results show that both wells are of the same magnitude, hence indicating commutativity of the band offset. Small interface dipoles (0.11–0.19 eV) were detected at the interfaces, which could be identified as quantum dipoles. © 1999 American Institute of Physics.
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  • 19
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 2732-2753 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The occurrence of quantum dipoles at layered materials semiconductor heterointerfaces was investigated by photoemission spectroscopy (PES). Due to the unique properties of layered compounds the prepared interfaces are essentially free of the structural problems known from the usually investigated heterosystems composed of III–V, IV or II–VI materials allowing the detailed investigation of electronic phenomena at the interfaces. We investigated heterostructures composed of epitaxial layers of SnS2 and SnSe2 on different single crystalline layered chalcogenide substrates (WSe2, MoS2, MoTe2, and GaSe). The epilayers were grown by van der Waals epitaxy (vdWe) on the (0001) plane of the substrate crystals. For every system the valence band offset was determined by careful evaluation of the PES data as a function of the film thickness. Using published values for the band gaps and the experimentally determined work functions and surface potentials the band lineup for each system was determined. The band offsets of all systems were found to differ from the prediction of the electron affinity rule (EAR) by a small systematic deviation which was related to the occurrence of localized quantum dipoles at the interface. This deviation can be expressed as a linear charge transfer correction term added to the original EAR. This corrected EAR is still a linear rule allowing the assignment of "characteristic energies" to each material for the calculation of the band offset. We could demonstrate that the error margin of the corrected EAR lies well within the experimental error of PES experiments, thus proving the general applicability of linear laws for the determination of the band offset in absence of structural dipoles. © 1999 American Institute of Physics.
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  • 20
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2283-2285 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Valence-band photoelectron spectroscopy of CuInSe2, CuInS2, and CuGaSe2 surfaces and interfaces give evidence for the formation of Cu vacancies when the Fermi level moves upwards in the band gap due to contact formation. The effect might be a key issue in understanding basic properties of solar cell devices based on these materials. © 1999 American Institute of Physics.
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