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  • 11
    Electronic Resource
    Electronic Resource
    Direct observation of void morphology in step-like electromigration resistance behavior and its correlation with critical current density (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2130-2133 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electromigration-induced resistance behavior of via-terminated metal lines was studied. We found a strong correlation between void morphology and step-like resistance behavior. For the lines which exhibit pronounced resistance steps, voids are formed at the top or bottom Al/TiN interface. For the lines which exhibit gradual resistance increases, only complete void formation severing the whole line occurs. The step-like resistance behavior is more pronounced when the current density is close to the critical current density. Possible mechanisms for the resistance steps are discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1340004
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  • 12
    Electronic Resource
    Electronic Resource
    Structure, interaction, and growth of sodium dodecyl-o-xylenesulfonate micelles in aqueous solutions (1987)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 91 (1987), S. 1535-1541 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100290a049
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  • 13
    Electronic Resource
    Electronic Resource
    Low-voltage inverted transparent vacuum deposited organic light-emitting diodes using electrical doping (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 922-924 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate low-voltage inverted transparent vacuum deposited organic light-emitting diodes employing an indium-tin-oxide coated glass substrate directly as cathode and a semitransparent top Au thin film as anode. The devices comprise an intrinsic 8-tris-hydroxyquinoline aluminum (Alq3) emitting layer sandwiched in between n- and p-doped charge transport layer with appropriate blocking layers. They exhibit low driving voltages (∼4 V for a luminance of ∼100 cd/m2). The devices are about 50% transparent in the Alq3 emission region and emit green light from both sides with a total external current efficiency of about 2.5 cd/A. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1496502
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  • 14
    Electronic Resource
    Electronic Resource
    Two-dimensional simulation of switch-on speeds in hydrogenated amorphous silicon thin-film transistors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5231-5240 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report accurate two-dimensional simulations of switch-on speeds in hydrogenated amorphous silicon thin-film transistors. The trap charge density along, or transverse to, the direction of semiconductor channel is highly nonuniform and the trap filling time dominates the switching time as compared to the transit time, which is about four orders of magnitude smaller. Near both contacts, direction of the transverse current is always upwards toward the insulator-semiconductor interface due to the strong electric fields. However, at the central region of the channel, the transient current is quite complex and is discussed here. When the channel length varies from 2 to 10 μm, the switching-on time is of the order of 10−3 s. The occupation function everywhere displays a partial filling of higher-energy trap states during the switch-on. This is in contrast to results presented by other investigators. Finally, the relationship between the transit time and the switch-on time with respect to the amount of trap states is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354263
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  • 15
    Electronic Resource
    Electronic Resource
    Two-dimensional current transient and trap-state filling of amorphous silicon thin-film transistors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5981-5988 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two-dimensional simulations of amorphous silicon thin-film transistors are presented for the case when source-drain voltage is turned on long before gate voltage is turned on. Discrepancies between these results and the one-dimensional results of M. F. Willums, M. Hack, P. G. LeComber, and J. G. Shaw [MRS Symp. Proc. 258, 985 (1992)] are discussed. Valid reasons for drain current decay are provided, and occupation dynamics for the trap states are shown in order to distinguish these from the one-dimensional results of C. van Berkel, J. R. Hughes, and M. J. Powell [J. Appl. Phys. 66, 4488 (1989)] where a two-fluid model occupation function was assumed. The invalidity of such approximation is explicitly demonstrated. The mean trap-filling energy level moves up in three stages: First, the level varies with log t, then varies linearly with t, and finally, with log (log t) to a steady-state level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358378
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  • 16
    Electronic Resource
    Electronic Resource
    Oxidation of Cu and Cu3Ge thin films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5443-5445 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the oxidation kinetics of Cu and Cu3Ge thin films in air using in situ resistivity measurement and x-ray photoelectron spectroscopy. Thin films of Cu oxidize in air around 250 °C to form CuO with an activation energy of 0.74 eV. In contrast to Cu, thin films of Cu3Ge oxidize only above 450 °C. The excellent oxidation resistance of Cu3Ge is due to the thin GeO2 layer which protects Cu3Ge from oxidation below 450 °C. Above 510 °C, GeO2 evaporates and the oxidation protection is lost. Besides the excellent oxidation resistance and low resistivity, we also found Cu3Ge to have a better adhesion to SiO2 than Cu. It has the potential to be used as an adhesion layer and passivation layer in Cu metallization. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359238
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  • 17
    Electronic Resource
    Electronic Resource
    Dopant activation of heavily doped silicon-on-insulator by high density currents (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1552-1557 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have activated heavily boron-doped and arsenic-doped silicon-on-insulator (SOI) strips by applying electrical current. The SOI strips were implanted with 40 keV BF2+ or As+ at a dosage of 5×1015 ions/cm2. Without postimplantation annealing, these implanted SOI strips can be activated by applying a current up to 1×106 A/cm2, the resistance decreased from 8.80 to 0.61 kΩ for a 10 μm wide, 50 μm long, and 0.2 μm thick n+ silicon strip, for instance. This reduction of resistance is close to that obtained by the conventional postimplantation annealing at 900 °C for 30 min. To separate the effect of Joule heating from that of current activation, the temperature of the SOI strips during the current activation has been measured by Pt sensors. The result indicates that the temperature rise due to Joule heating is low and cannot explain the observed activation. We conclude that implanted dopants in Si can be activated by current stressing. To confirm it, carrier concentration obtained by Hall measurement is presented. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370928
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  • 18
    Electronic Resource
    Electronic Resource
    Abnormal electrical behavior and phase changes in implanted p+- and n+-Si channels under high current densities (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4788-4796 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The p+- and n+-Si channels were prepared by implanting a dose of 5×1015 ions/cm2 of BF2+ and As+ at 40 keV, respectively, into the n-Si and p-Si substrates, followed by a 900 °C-30 min annealing. Nickel contacts (cathode and anode) to these channels were electron-gun evaporated. Electrical current was applied gradually to 80 mA to these channels, corresponding to current densities of 106–107 A/cm2. For the p+-Si, the resistance responded by increasing to a maximum, then decreasing until a precipitous drop took place. For the n+-Si, the resistance increased by a less amount compared to the p+-Si, but also dropped abruptly. The resistance drop is permanent in the p+-Si channels, but not in the n+-Si channels. Mechanisms responsible for these resistance changes in terms of Joule heating, high field effect and junction leakage are proposed. For the precipitous drop in channel resistance of the p+-Si, scanning electron microscopy and transmission electron microscopy showed that a NiSi2 line bridging the cathode and anode contacts had been formed. No silicide line formation in the n+-Si channels was observed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368802
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  • 19
    Electronic Resource
    Electronic Resource
    Asymmetrical heating behavior of doped Si channels in bulk silicon and in silicon-on-insulator under high current stress (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6895-6901 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: With continuing scaling down in microelectronic devices, the current density and the power consumption in the devices must increase. Hence, device reliability under high current density is an issue for ultralarge-scale integration technology. This study investigates the heating behavior of the heavily doped Si channels under high current stress. Thermal and electrical characterization of the channels in bulk Si and in silicon-on-insulator were conducted. An abnormal asymmetrical heating along the channels in bulk Si has been observed. We propose a junction leakage mechanism to explain the phenomenon observed. Other asymmetrical thermal effects, such as electron–hole recombination and Peltier effect, have also been discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371769
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  • 20
    Electronic Resource
    Electronic Resource
    White light emission induced by confinement in organic multiheterostructures (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 641-643 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique for inducing white-light emission from organic multiheterostructures is proposed. The configuration of organic multiheterostructure white-light emitting diodes is ITO/TPD(50 nm)/BePP2(5 nm)/TPD(4 nm)/BePP2:rubrene(5 nm)/TPD(4 nm)/Alq3(10 nm)/Al. Triphenyldiamine derivative (TPD) is used as a hole-transporting layer and the potential barrier layers. Blue fluorescent phenylpyridine beryllium (BePP2), orange fluorescent rubrene, and green fluorescent aluminum complex (Alq3) are used as three primary colors. BePP2 and BePP2 doped with rubrene act as the potential wells sandwiched between TPD barrier layers, in which excitons are confined. Alq3 is used as an electron-transporting green-color emitter. The white-light emission spectrum covers a wide range of the visible region, and the Commission Internationale de l'Eclairage coordinates of the emitted light are (0.32, 0.38) at 9 V. The maximum brightness and luminous efficiency of this device are 4000 cd/m2 (at 17 V) and 0.4 lm/W, respectively. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123190
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