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  • Analytical Chemistry and Spectroscopy  (13)
  • SOLID-STATE PHYSICS  (13)
  • 11
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Journal of Raman Spectroscopy 13 (1982), S. 53-55 
    ISSN: 0377-0486
    Keywords: Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: The pressure dependences at room temperature of the translational lattice modes and of the ν2 and ν4 internal bending modes of the ReO4- ion in solid NH4ReO4 are reported. There is no evidence of any phase transition up to a pressure of 15 kilobar. The pressure coefficients of the translational modes are 2.0 cm-1 GPa-1 and 3.0 cm-1 GPa-1 for the Bg and Eg modes respectively. The pressure coefficients of the bending modes are 1.0 cm-1 GPa-1 and 5.4 cm-1 GPa-1 for the Bg and Ag components of ν2, and 4.1 cm-1 for the overlapped Bg and Eg components of ν4.The symmetry assignments of the low frequency lines in the spectrum were checked by means of polarized Raman spectra of a single crystal. The previous assignments are correct.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Journal of Raman Spectroscopy 11 (1981), S. 363-368 
    ISSN: 0377-0486
    Keywords: Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: The temperature dependence of the Raman spectrum of potassium perrhenate is reported. Some new detailed results on the temperature dependence of the low frequency Raman bands of ammonium perrhenate are also presented. The frequency versus temperature plots for both internal and external modes of the ReO4- ion in KReO4 appear to be linear over the temperature range from 20 to 300 K. This is in contrast to the non-linear behaviour of the external modes of the ReO4- ion in NH4ReO4. A crossing of the frequencies of the Ag and Eg librational modes of the ReO4- ion in NH4ReO4 occurs near 200 K, the temperature at which anomolies have been observed in the temperature dependence of several physical properties of this salt. The apparent discontinuities near 200 K in the slopes of the wavenumber versus temperature curves reported earlier1 are now shown to be shoulders on smooth curves. Extrapolation of the frequency versus temperature plots of the Eg and Bg translational modes of the ReO4- ion in KReO4 indicates that a crossing of the curves would occur at about 500 K, while for NH4ReO4 the crossing of the frequencies of these modes is observed near 200 K. The significance of these observations with respect to the structure and a possible higher order phase transition in the NH4ReO4 crystal is discussed.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Journal of Raman Spectroscopy 7 (1978), S. 96-100 
    ISSN: 0377-0486
    Keywords: Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: Raman spectra of NH4ReO4 and ND4ReO4 have been recorded at several temperatures between 77 K and 353 K. As the temperature is increased, several bands due to both internal and external modes of the perrhenate ion are shifted to lower wavenumbers and there is a discontinuity in the slope of the wavenumber versus temperature curves near 200 K. This behaviour is correlated with recent NQR and X-ray diffraction results and supports the suggestion of a higher order phase transition near 200 K. The bands due to the ammonium ion vibrations are broadened as the temperature is increased and the librational lattice mode is no longer observable above about 200 K. The nature of the motion of the ammonium ion in the lattice is discussed and it is pointed out that the presence of a librational lattice mode does not necessarily indicate an absence of reorientational motion.
    Additional Material: 5 Ill.
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  • 14
    Publication Date: 2011-08-19
    Description: Results are presented from finite element analysis of the Czochralski (CZ) and Liquid Encapsulated Czochralski (LEC) crystal growth processes based on a thermal-capillary model which governs the heat transfer in the system simultaneously with setting the shapes of the melt/solid interface, the melt and encapsulant menisci, and the radius of a steadily growing crystal. Calculations are performed for the small-scale growth of silicon (CZ) and gallium arsenide (LEC). The effects of melt volume and crucible position relative to the heater on the radius of the crystal and the shape of the melt/solid interface are predicted for the CZ system, and the importance of including an accurate representation of the melt meniscus for modeling the process is demonstrated. The additional effect of an encapsulant layer on heat transfer is treated for the LEC method for the cases of totally transparent and opaque encapsulant. The responses of these LEC prototype systems are examined for changes in pull rate and encapsulant volume.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Crystal Growth (ISSN 0022-0248); 74; 605-624
    Format: text
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  • 15
    Publication Date: 2011-08-19
    Description: The pseudosteady-state heat transfer model developed in a previous paper is augmented with constraints for constant crystal radius and melt/solid interface deflection. Combinations of growth rate, and crucible and bottom-heater temperatures are tested as processing parameters for satisfying the constrained thermal-capillary problem over a range of melt volumes corresponding to the sequence occuring during the batchwise Czochralski growth of a small-diameter silicon crystal. The applicability of each processing strategy is judged by the range of existence of the solution, in terms of melt volume and the values of the axial and radial temperature gradients in the crystal.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Crystal Growth (ISSN 0022-0248); 75; 227-240
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  • 16
    Publication Date: 2011-08-19
    Description: Galerkin finite element analysis of a thermal-capillary model of the floating zone crystal growth process is used to predict the dependence of molten zone shape on operating conditions for the growth of small silicon boules. The model accounts for conduction-dominated heat transport in the melt, feed rod and growing crystal and for radiation between these phases, the ambient and a heater. Surface tension acting on the shape of the melt/gas meniscus counteracts gravity to set the shape of the molten zone. The maximum diameter of the growing crystal is set by the dewetting of the melt from the feed rod when the crystal radius is large. Calculations with small Bond number show the increased zone lengths possible for growth in a microgravity environment. The sensitivity of the method to the shape and intensity of the applied heating distribution is demonstrated. The calculations are compared with experimental observations.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Crystal Growth (ISSN 0022-0248); 75; 367-389
    Format: text
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  • 17
    Publication Date: 2013-08-31
    Description: This research program focuses on analysis of the transport mechanisms in solidification processes, especially one of interest to the Microgravity Sciences and Applications Program of NASA. Research during the last year has focused on analysis of the dynamics of the floating zone process for growth of small-scale crystals, on studies of the effect of applied magnetic fields on convection and solute segregation in directional solidification, and on the dynamics of microscopic cell formation in two-dimensional solidification of binary alloys. Significant findings are given.
    Keywords: SOLID-STATE PHYSICS
    Type: The materials processing research base of the Materials Processing Center; p 27-48
    Format: application/pdf
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  • 18
    Publication Date: 2016-06-07
    Description: The success of efficiently calculating the temperature field, crystal radius, melt mensicus, and melt/solid interface in the Czochralski crystal growth system by full finite-element solution of the government thermal-capillary model is demonstrated. The model predicts realistic response to changes in pull rate, melt volume, and the thermal field. The experimentally observed phenomena of interface flipping, bumping, and the difficulty maintaining steady-state growth as the melt depth decreases are explained by model results. These calculations will form the basis for the first quantitative picture of Cz crystal growth. The accurate depiction of the melt meniscus is important in calculating the crystal radius and solidification interface. The sensitivity of the results to the equilibrium growth angle place doubt on less sophisticated attempts to model the process without inclusion of the meniscus. Quantitative comparison with experiments should be possible once more representation of the radiation and view factors in the thermal system and the crucible are included. Extensions of the model in these directions are underway.
    Keywords: SOLID-STATE PHYSICS
    Type: JPL Proceedings of the Flat-Plate Solar Array Project Workshop; p 195-214
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  • 19
    Publication Date: 2014-09-12
    Description: Finite element numerical analysis was used to solve the coupled problem of heat transfer and capillarity to describe low and high speed silicon sheet growth in meniscus defined systems. Heat transfer models which neglect the details of convective heat flow in the melt are used to establish operating limits for an EFG system in terms of the growth rate, die temperature and the static head acting on the meniscus. It is shown that convective heat transfer in the melt becomes important only at high growth rates or for materials with low thermal conductivities.
    Keywords: SOLID-STATE PHYSICS
    Type: JPL Proc. of the Flat-Plate Solar Array Proj. Res. Forum on the High-Speed Growth and Characterization of Crystals for Solar Cells; p 311-329
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  • 20
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    In:  Other Sources
    Publication Date: 2011-08-18
    Description: Investigations of the interactions of heat, mass, and momentum transport in crystal growth from the melt are described. Studies of the mall-scale floating zone process and on a prototype of the vertical Bridgman growth system were emphasized. In both systems detailed numerical calculations are used to dissect the interplay between fluid convection and dopant segregation. These calculations are based on finite element techniques that make feasible the complete solution of solidification problems which include convection. Other numerical methods were developed for solving thermal models of crystal growth processes with melt/gas menisci and for simulating the microscale instabilities in solidification interfaces.
    Keywords: SOLID-STATE PHYSICS
    Type: The Mater. Process. Res. Base of the Mater. Process. Center; p 97-116
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