Publication Date:
2019-07-13
Description:
We have developed a process to integrate microstripline wiring with transition edge sensors (TES). The process includes additional layers for metal-etch stop and dielectric adhesion to enable recovery of parameters achieved in non-microstrip pixel designs. We report on device parameters in close-packed TES arrays achieved with the microstrip process including R(sub n), G, and T(sub c) uniformity. Further, we investigate limits of this method of producing high-density, microstrip wiring including critical current to determine the ultimate scalability of TES arrays with two layers of wiring.
Keywords:
Electronics and Electrical Engineering
Type:
GSFC.JA.7324.2012
,
GSFC-E-DAA-TN9557
,
Journal of Low Temperature Physics; 167; 4-Mar; 547-553
Format:
application/pdf
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