Publication Date:
2014-02-26
Description:
Author(s): H. C. Xu, Y. Zhang, M. Xu, R. Peng, X. P. Shen, V. N. Strocov, M. Shi, M. Kobayashi, T. Schmitt, B. P. Xie, and D. L. Feng The bulk electronic structure of NiS2−xSex has been studied across the bandwidth-control Mott transition (BCMT) using soft x-ray angle-resolved photoemission spectroscopy. We show that Se doping does not alter the Fermi surface volume. When approaching the insulating phase with decreasing Se concent... [Phys. Rev. Lett. 112, 087603] Published Tue Feb 25, 2014
Keywords:
Condensed Matter: Electronic Properties, etc.
Print ISSN:
0031-9007
Electronic ISSN:
1079-7114
Topics:
Physics
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