Publication Date:
2017-05-20
Description:
Author(s): F. Cadiz, E. Courtade, C. Robert, G. Wang, Y. Shen, H. Cai, T. Taniguchi, K. Watanabe, H. Carrere, D. Lagarde, M. Manca, T. Amand, P. Renucci, S. Tongay, X. Marie, and B. Urbaszek Transition-metal dichalcogenides are a class of two-dimensional materials that offer potential for developing flat and flexible transistors and optoelectronics, but their quality is often hindered by traditional methods for depositing these atomically flat materials. An experiment demonstrates a new technique that leads to higher quality crystals and better access to studying their properties. [Phys. Rev. X 7, 021026] Published Thu May 18, 2017
Electronic ISSN:
2160-3308
Topics:
Physics
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