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  • Elsevier  (78)
  • American Institute of Physics (AIP)  (34)
  • International Union of Crystallography  (4)
  • 11
    Electronic Resource
    Electronic Resource
    Effect of oxygen plasma annealing on superconducting properties of Bi2(Sr,Ca)3Cu2Ox and YBa2Cu3O7−δ thin films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 575-577 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of the Bi2(Sr,Ca)3Cu2Ox and YBa2Cu3O7−δ system were annealed at 400 °C in a high-density oxygen plasma and its effect on superconducting properties was investigated. After being annealed in the oxygen plasma, their superconducting transition temperatures decreased by about 10 K and 2 K, respectively, and the c-axis lattice constants of these films were also found to decrease as a result of the annealing in the oxygen plasma. These results suggest that excessive oxygen incorporated into the films by the annealing in the oxygen plasma caused the excessive hole carriers, which deteriorated the superconducting transition temperatures of these films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103302
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  • 12
    Electronic Resource
    Electronic Resource
    Preparation of Bi-Sr-Ca-Cu-O thin film by coevaporation and its thermal stability (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 572-574 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin film with a high Tc single phase was prepared on a (100)MgO substrate at a substrate temperature of about 620 °C by coevaporation of Bi2O3, Sr, Ca, and Cu metal. The resistive superconducting transition with onset Tc of 80 K was observed for this film. By post-deposition annealing at 850 °C, the high Tc phase was transformed into a low Tc phase, while films annealed at a higher temperature such as 890 °C maintained the high Tc phase. These results indicated that the high Tc phase can exist only at the high-temperature region (∼890 °C) while the stable phase existing at the low-temperature region (∼850 °C) is the low Tc phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101460
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  • 13
    Electronic Resource
    Electronic Resource
    As-grown superconducting Bi-Sr-Ca-Cu-O thin films by coevaporation (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 702-704 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting Bi-Sr-Ca-Cu-O thin films have been prepared on (100) MgO substrates at about 600 °C by coevaporation. The c-axis lattice constant of this system was controlled to the values of 24–43 A(ring) by changing film composition. Superconducting transition temperatures of these films were affected by substrate temperature and by a post-deposition annealing at a low temperature. The highest zero resistance temperature (Tc, zero) of the as-grown Bi2(Sr,Ca)3Cu2Ox film was 79 K. The best Bi2(Sr, Ca)4Cu3Ox film showed an onset temperature of 105 K and Tc, zero zero of 78 K after annealing at 400 °C for 1 h.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101574
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  • 14
    Electronic Resource
    Electronic Resource
    Epitaxial film growths of artificial (Bi-O)/(Sr-Ca-Cu-O) layered structures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2364-2366 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial film growth of artificial (Bi-O)/(Sr-Ca-Cu-O) layered structures on MgO substrates was carried out using reactive-oxygen-gas dual ion beam sputtering and shuttering technique. A 12 A(ring) Sr-Ca-Cu-O buffer layer seems suitable for perfect epitaxial film growth. Single-phase films having periodicities of 12, 15, and 18 A(ring) (which correspond to bulk 24, 30, and 36 A(ring) phases in Bi oxide superconductors) were selectively grown by adjusting the thickness of a Sr-Ca-Cu-O layer sandwiched by Bi-O bi-planes. A high Tc phase film with a total thickness of about 300 A(ring) showed an onset Tc of 110 K and a zero resistivity temperature of 45 K without post-deposition annealing. The shuttering technique seems to enable the layer-by-layer film growth, and it is very effective for the formation of smooth and perfect epitaxial structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101529
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  • 15
    Electronic Resource
    Electronic Resource
    In situ epitaxial growth of Bi2(Sr,Ca)3Cu2Ox films by ion beam sputtering with an atomic oxygen source (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 295-297 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ epitaxial growth of Bi2(Sr,Ca)3Cu2Ox films was performed by ion beam sputtering in atomic oxygen ambience at the substrate temperature of 640 °C. The films showed an epitaxial growth in which the a and b axes were parallel to 〈100〉 MgO, and the superstructure according to the incommensurate modulation along the b axis was also observed. The superconducting properties of the as-grown films seemed to sensitively depend on the oxidation treatment during the cooling down process. The zero resistivity temperature Tc(R=0) of a 600-A(ring)-thick film cooled down in the same atomic oxygen density as the film growth ambience was 60 K, but it increased up to 80 K after a post-deposition annealing at 500 °C for 1 h in air. In contrast, as-grown films cooled down in insufficient oxidation ambience showed the Tc(R=0) of 76 K without post-deposition annealing. The control of the oxygen concentration is critical for the superconductivity of as-grown films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103286
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  • 16
    Electronic Resource
    Electronic Resource
    Preferentially oriented epitaxial Y-Ba-Cu-O films prepared by the ion beam sputtering method (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1292-1295 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Preferentially oriented epitaxial Y-Ba-Cu-O films were prepared on (100) SrTiO3 substrates by oxygen reactive ion beam sputtering. The epitaxial orientations were varied by controlling both substrate temperature and oxygen parital pressure. c-axis oriented films tended to be formed at higher substrate temperatures (〉620 °C) and lower oxygen pressures (〈3×10−3 Torr). In contrast, a/c- and a-axis oriented films were formed at lower substrate temperatures (〈600 °C) and higher oxygen pressures (〉3×10−3 Torr). The best Tc (end) of 82 K was observed in one of the c-axis oriented film without post-annealing. The tendency for preferential orientation can be well understood in terms of the lattice mismatch between the substrate and the film, the lattice constants of which depend on oxygen deficiency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341848
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  • 17
    Electronic Resource
    Electronic Resource
    Annealing effects for implanted Y-Ba-Cu-O superconductors (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 936-938 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Annealing effects of Y-Ba-Cu-O superconductor thin films implanted by 200-keV Ne+ have been investigated. Transition temperature (Tc) end points for 0, 1×1014, 1×1015, and 1×1016 ions/cm2 doses are 75, 71, 62, and 16 K, respectively. The film implanted at 1×1017 ions/cm2 dose indicates nonsuperconductors. The c-lattice constant increases were observed for the implanted films. It is confirmed that the superconducting characteristics for film, which is implanted at 1×1016 ions/cm2 dose, are recovered by annealing in O2 atmosphere at 940 °C for 4 h. Moreover, microcrystal growth caused by annealing the implanted film was observed on the surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341897
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  • 18
    Electronic Resource
    Electronic Resource
    A new method for measuring phase shift in heterodyne interferometric measurement (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 1442-1447 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new method for analyzing the phase shift of probe beat in heterodyne interferometric measurement has been developed. The phase shift is obtained directly from the changes of the probe beat period without comparing with a reference beat. An electric circuit system has been designed according to this method of measurement, combined with a heterodyne interferometer of HCN laser or 4 mm microwave of line-integrated electron density of plasma in the compact helical system (CHS). The experimental results show that the method is effective. It simplifies the interferometric system and is free from the trouble of initial phase difference between the probe beat and reference. The minimum measurable phase shift is determined by the ratio of beat frequency to the counting clock frequency. The maximum measurable phase shift is infinite in principle.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141149
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  • 19
    Electronic Resource
    Electronic Resource
    Measurement of electron density with combined technique of laser blowoff and laser-induced fluorescence (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 1036-1037 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A method combining the techniques of laser blowoff and laser-induced fluorescence has been developed in order to measure the local electron density below 1013 cm−3. Characteristics of a Li0 beam produced by laser blowoff of a thin Li film are investigated using beam–plasma interactions and laser-induced fluorescence. Such a beam has a near-Maxwellian velocity distribution with a temperature around 4.5 eV and a density of the order of 1010 cm−3 at a distance of about 1 m from the film target. The feasibility of measuring electron density with this Li0 beam and a dye laser is demonstrated with an ECR plasma.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138260
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  • 20
    Electronic Resource
    Electronic Resource
    Absolute calibration of neutron counters on the Compact Helical System : Proceedings of the tenth topical conference on high temperature plasma diagnostics (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 923-925 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A calibration experiment of the neutron counters of the Compact Helical System (CHS) has been carried out in order to determine the calibration factor which relates the neutron-counter output to the extended neutron source of a torus plasma. The instruments employed in the present experiment include a BF3 proportional counter, a 3He proportional counter, an NE213 organic liquid scintillator. The BF3 counter was installed at the center of the CHS torus and the other two detectors were installed outside the torus. A total of 64 toroidal angles along the magnetic axis of plasma were surveyed by the movement of a 252Cf neutron source. The poloidal cross section of the CHS plasma is elliptical in shape and rotates toroidally with the same period as that of the helical coil. The spatial distribution of 25 local point efficiencies in three poloidal cross sections with elongated orientations of 0°, 45°, and 90° were investigated in order to determine the influence of the plasma profile on the calibration factor. The shadow and scattering effects were clearly observed by the center counter when the source was located behind the helical coil. The calibration factor for the BF3 counter, obtained by averaging the point efficiencies over all the toroidal angles, was 3.6×10−4 counts per neutron, about several ten times greater than those of the counters located outside the torus. Details of the calibration setup and the analysis of experimental results are presented. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146208
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