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  • Elsevier  (464)
  • American Institute of Physics (AIP)  (22)
  • 11
    Digitale Medien
    Digitale Medien
    Hard x-ray phase zone plate fabricated by lithographic techniques (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1877-1879 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A Fresnel phase zone plate with an unprecedented focusing efficiency of 33% was fabricated using an x-ray lithographic technique and was tested using synchrotron x rays. Contributions by the zeroth-order x ray to the focus were minimal. Spatial resolution in the micrometer range was achieved. The measured spot size was dominated by geometric demagnification of the source. It should be possible to obtain submicrometer resolution by aperturing the source. Experimental results of focusing efficiency measurements, intensity distribution at the focal plane, and spatial resolution tests are reported.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.108400
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  • 12
    Digitale Medien
    Digitale Medien
    Fully planar method for creating adjacent "self-isolating'' silicon-on-insulator and epitaxial layers by epitaxial lateral overgrowth (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 483-485 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A novel and simple process is demonstrated for creating isolated silicon-on-insulator (SOI) tubs adjacent to selective epitaxial substrate layers. The process results in a fully planar wafer surface which is uniquely suited for mixed bipolar/complementary metal-oxide-semiconductor device fabrication. Low-temperature epitaxial lateral overgrowth (ELO) using SiH2Cl2/HCl/H2 is carried out in a reduced-pressure chemical vapor deposition reactor to create SOI islands in thermally grown SiO2 valleys. SOI islands and epitaxial seed regions are "self-isolated'' by chemical-mechanical planarization. The as-grown ELO is single-crystal material with well-defined facets. Planarized SOI and epilayer regions have planar, featureless surfaces. Defect etching for the nonoptimized SOI layers indicates about 5×104 stacking faults/cm2.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.106643
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  • 13
    Digitale Medien
    Digitale Medien
    Effects of deposition parameters on the refractive index in plasma polymerized methyl methacrylate thin films (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2595-2597 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Plasma polymerization can be used to deposit thin films whose properties significantly differ from those of conventionally synthesized linear or cross-linked polymers. We investigate the plasma polymerization of methyl methacrylate for use in microelectronic and photonic applications. The deposition system is a 13.56 MHz parallel plate reactor. The effects of varying rf power and neutral pressure on deposition rate and refractive index in the visible are examined. It is found that the deposition rate can be varied from 50–500 A(ring)/min over a pressure range of 40–300 mT. In addition, the refractive index can be varied from 1.5 to 1.6 in the visible by varying the rf power from 10 to 50 W. Possible applications in photonics include smoothly varying graded index and multilayer structures.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.106920
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  • 14
    Digitale Medien
    Digitale Medien
    Use of photosensitive polyimide for deep x-ray lithography (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2072-2073 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this letter, a method is outlined and results presented for an x-ray lithography micromachining process that offers a greatly improved sensitivity over the LIGA process. This process is based on photosensitive polyimide (PPI), which is a commercial photoresist typically used as a passivation layer or dielectric material in the semiconductor industry. The main benefit of this process is its high sensitivity, which is approximately two orders of magnitude greater than that of the PMMA used in the LIGA process. Using a synchrotron radiation x-ray source, we have achieved resist patterns over 1000 μm thick. The capability has also been demonstrated for aspect ratios over 10, as well as the ability to print linewidths down to 0.5 μm. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.113906
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  • 15
    Digitale Medien
    Digitale Medien
    Biexcitonic contribution to polarization-dependent degenerate four-wave mixing in GaAs quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 238-240 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report measurements of the polarization and time-averaged intensity of four-wave mixing signals from GaAs quantum wells as functions of the pump beam polarizations, laser photon energy, and optical injection density, the latter covering a range of higher levels than has previously been reported. Excitation of heavy-hole excitons produced a sin2 variation of the signal intensity as the pump beam polarizations changed from parallel to perpendicular, while injection of light-hole excitons led to an approximately cos2 dependence. The tuning dependence of the heavy-hole-exciton signal revealed a low-energy signal which is attributed to biexcitons. The dominance of this signal for perpendicular polarization causes the observed sin2 variation of the heavy-hole-exciton signal. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.114679
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  • 16
    Digitale Medien
    Digitale Medien
    Morphology of plasma polymerized methyl methacrylate films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 560-562 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The surface morphology of plasma polymerized methyl methacrylate films was investigated using atomic force microscopy. It was found that the plasma polymer surfaces consist of nanometer scale growth columns. The average grain size of the growth columns increases with deposition time. For the same deposition time, the average grain size is proportional to pressure and deposition power. It was deduced that microscopic properties of plasma polymers are not uniform through the bulk of the plasma polymer films even though the external deposition parameters are held constant.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.111103
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  • 17
    Digitale Medien
    Digitale Medien
    Unique method to electrically characterize a single stacking fault in silicon-on-insulator metal–oxide–semiconductor field-effect transistors (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 4034-4036 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A unique and simple method is demonstrated for characterizing the electrical behavior of a single stacking fault in thin-film fully depleted silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFETs). SOI islands were created using selective epitaxial growth/epitaxial lateral overgrowth technology. P-channel MOSFETs, with the presence of a single stacking fault entirely in the channel region, were measured. The influence of a single stacking fault on device current–voltage characteristics was determined and compared to that of nearby identical devices without stacking faults. It was found that the threshold voltage increased and saturation current decreased, but had low subthreshold leakages. P-channel MOSFETs, with a single stacking fault crossing the gate and penetrating into the source and drain, had high subthreshold leakage currents. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1331641
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  • 18
    Digitale Medien
    Digitale Medien
    The fast crash of the central temperature during sawteeth in tokamaks (1987)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 30 (1987), S. 2119-2128 
    Details
    ISSN: 1089-7666
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A simple model of the crash phase of sawteeth in tokamaks is presented, which explains many of the significant experimental observations: small oscillations in the electron temperature prior to the crash (precursor), a short crash time, and large long-lived oscillations in the electron temperature following the crash (successor). In tokamak discharges with good central confinement the temperature profile across the center of the discharge remains rather flat. In such profiles skin currents form that cause the safety factor q to fall below one at a finite radius rs while q(r=0)(approximately-equal-to)1. The sawtooth crash is caused by the m=n=1 tearing mode growing on such a profile. For a profile in which q falls below one by an amount Δq, the crash time is given by the helical Alfvén time τA/Δq, independent of the resisitivity. The size of the magnetic island of the precursor can be a small fraction of rs. In contrast, a remnant magnetic island of the order of rs survives the crash and causes the successor oscillation. Estimates of the decay time of the successor are given.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.866506
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  • 19
    Digitale Medien
    Digitale Medien
    The m=1 convection cell and sawteeth in tokamaks (1987)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 30 (1987), S. 1448-1451 
    Details
    ISSN: 1089-7666
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Resistive magnetohydrodynamic (MHD) simulations of sawtooth activity in tokamaks are presented. An m=1 convection cell driven by the resistivity gradient forms in the center of the column and causes the sawteeth to die away. The nonlinear properties of this convection cell are calculated analytically. Periodic sawteeth are obtained when the parallel thermal conduction is sufficiently large.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.866258
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  • 20
    Digitale Medien
    Digitale Medien
    Fractionation of heparin using antithrombin III reversibly bound to concanavalin A-Sepharose
    Amsterdam : Elsevier
    Analytical Biochemistry 118 (1981), S. 388-391 
    Details
    ISSN: 0003-2697
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Biologie , Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1016/0003-2697(81)90598-4
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