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  • 11
    Electronic Resource
    Electronic Resource
    Intrinsic Josephson junctions in oxygen-deficient YBa2Cu3O7−δ film deposited on a substrate step (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3740-3744 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using c-axis-oriented oxygen-deficient YBa2Cu3O7−δ film deposited across a low-angle step on a SrTiO3 substrate, we successfully demonstrated intrinsic Josephson effects. In addition to several voltage jumps of large amplitudes (a few millivolts) and remarkable hysteresis on the dc current–voltage curves, we observed upturns on the current–voltage curves under microwave irradiation which appeared at increasingly high voltages with increasing microwave power. We proposed to explain this observation in terms of high-order microwave-induced Shapiro steps. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369741
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  • 12
    Electronic Resource
    Electronic Resource
    Energy distribution of the compact microwave ion source for extremely low voltage ion extraction : Papers from the Ninth International Conference on Ion Sources (2002)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 758-760 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The energy distribution of the ion beam extracted from the compact microwave ion source for extremely low voltage ion extraction was measured with Ar and CO as a discharge gas. The energy distribution was measured by the retarding field method, and changes with respect to the change in gas pressure were observed. The obtained data were arranged by the peak energy and the energy spread. For both gases, the peak energy and the energy spread decreased with an increase in the gas pressure. The energy spread of approximately 5 eV with the peak energy of 15 eV were obtained for Ar gas at the pressure of 10−2 Pa. For CO gas, the peak energy was higher than Ar and approximately 20 eV. The energy spread was 6 eV at the pressure of 10−2 Pa. These values agreed with the peak energy and energy spread that were estimated previously from the mass spectra analysis. Since the ion source was designed to be used in the researches of low energy ion-solid interaction, these characteristics satisfy the requirements for this purpose. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1429781
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  • 13
    Electronic Resource
    Electronic Resource
    Magneto-optical properties of Bi-substituted epitaxial rare-earth iron garnet thick films (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3256-3258 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films of (Yb,Tb,Bi)3Fe5O12 show excellent characteristics of the Faraday rotator at the wavelength of 1.3 μm; the rotation is −1800 deg/cm, insertion loss 0.3 dB, isolation 38 dB, and the temperature dependence of the Faraday rotation is 0.060 deg/K at room temperature. The films are grown epitaxially on the (Gd,Ca)3(Ga,Mg,Zr)5O12 substrates, from the melt in the flux PbO/B2O3/Bi2O3. The melt contains rare-earth ions (R=Y,Gd,Er,Dy,Tm,Yb,Lu) as c-site components of rare-earth iron garnets, and Fe and Ga+Al as a- and d-site components. The obtained film thickness is in the range 300–400 μm without appreciable defects on the substrate, with a 2-in. diameter. This technology will lead to the efficient production of the optical isolator used in optical systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338873
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  • 14
    Electronic Resource
    Electronic Resource
    Frequency characteristics of the Mn-doped InP p-n junction (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1961-1963 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Admittance spectroscopy is applied to the analysis of the thermal properties of the Mn acceptor-doped InP grown by liquid-phase epitaxy. The thermal activation energy and capture cross section are determined as ΔET=183 meV and σp=1.8×10−13 cm2, respectively. The cutoff frequency of the emission of holes from the Mn acceptor is 1 GHz at 300 K. It is shown that the small signal frequency characteristic of a buried heterostructure laser is improved at frequencies f〉1 GHz by using the Mn-doped p-InP layer for the current blocking region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341094
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  • 15
    Electronic Resource
    Electronic Resource
    Direct observation of the current oscillation in a dc SQUID (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3786-3788 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The current waveforms of the self-resetting oscillation in a dc superconducting quantum interference device (SQUID) are observed by means of a Josephson sampling system. The frequency of the oscillation is around 60 GHz. The time period of the self-resetting oscillation is experimentally measured as a function of the bias current to the SQUID. Theoretical and numerical analyses are presented for the self-resetting oscillation in the dc SQUID.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337545
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  • 16
    Electronic Resource
    Electronic Resource
    Anatase TiO2 thin films grown on lattice-matched LaAlO3 substrate by laser molecular-beam epitaxy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2664-2666 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial anatase thin films were fabricated on lattice-matched (−0.2%) LaAlO3 (001) substrates in the layer-by-layer fashion by laser molecular-beam epitaxy. X-ray diffraction and transmission electron microscope show the films to exhibit high crystallinity and atomically defined interfaces. By virtue of the adoption of LaAlO3 substrate, which is transparent to photoexcitation of TiO2, optical band gaps could be determined to be 3.3 eV at room temperature. A photoluminescence band due to recombination of self-trapped excitons was observed at 5 K to give the peak maximum at 2.2 eV. As a result of the high degree of orientation of the epitaxial films, anisotropic optical absorption was clearly observed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1365412
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  • 17
    Electronic Resource
    Electronic Resource
    Microwave-induced current steps in intrinsic Josephson junctions patterned on Bi2Sr2CaCu2O8 single crystal (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3693-3695 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: With a 10 μm×10 μm mesa patterned on Bi2Sr2CaCu2O8 single crystals, we measure the current–voltage (I–V) curves of a stack of intrinsic Josephson junctions. Current steps are observed at an equal voltage spacing of 4 mV when the sample is subjected to microwave radiation at around 7 GHz. With increase of the microwave power, more steps occur while the spacing between neighboring steps does not seem to change. The magnitude of each step depends on the microwave power in an oscillating way. Tuning the microwave frequency causes such steps to occur over separate frequency ranges, and each range is quite narrow. A temperature rise from 4.2 to 14.3 K completely quenches the step structures. Possible explanations for the step structures, based on resonances excited by microwave or geometric resonances in the junction cavity, are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123223
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  • 18
    Electronic Resource
    Electronic Resource
    SiGe bulk crystal as a lattice-matched substrate to GaAs for solar cell applications (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3565-3567 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiGe bulk crystal fabricated by a multicomponent zone-melting method was used as a substrate for epitaxial growth of GaAs. Compared with conventional GaAs/Ge heterostructure, the lattice mismatch of GaAs/Si0.022Ge0.978 was confirmed to be reduced by a decrease of the peak separation of (400) x-ray diffraction from the epitaxial GaAs layer and the substrate. Furthermore, the linewidth of the rocking curve of GaAs on SiGe was found to be narrower than that of GaAs on Ge. These results show that SiGe is promising material as an alternative substrate to Ge for realization of exactly lattice-matched GaAs/SiGe solar cells. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1329639
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  • 19
    Electronic Resource
    Electronic Resource
    In situ analysis of the room-temperature epitaxial growth of CeO2 ultrathin films on Si (111) by coaxial impact-collision ion scattering spectroscopy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1838-1840 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The room-temperature epitaxial growth of CeO2 films on Si(111) substrates was examined in situ by combined use of a coaxial impact-collision ion scattering spectroscopy (CAICISS) and the laser molecular beam epitaxy (laser MBE). It was found that the crystal quality of CeO2 ultrathin films (∼3 nm thick) as-grown in UHV (∼10−9 Torr) could be improved remarkably by a few minutes of O2 gas exposure (∼10−5 Torr) at room temperature. A three-fold symmetry in the Ce signal intensity of azimuth rotational CAICISS spectra, which exhibited the type-B epitaxial growth ([1¯10]CeO2||[11¯0]Si), was observed for the films thicker than about 1 nm. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1356451
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  • 20
    Electronic Resource
    Electronic Resource
    Mixing at terahertz frequency band using YBa2Cu3O7−δ bicrystal Josephson junctions (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 707-709 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using high-Tc Josephson junctions made of YBa2Cu3O7−δ deposited across MgO bicrystal boundary, at terahertz (THz) frequency band, we demonstrated both fundamental and harmonic mixing. Radiation from a far-infrared laser was coupled to the junction, which was integrated with a planar bow-tie antenna, via an extended hyperhemispherical silicon lens. Fundamental mixing manifested itself in the junction's dc current–voltage (I–V) curve as a third Shapiro step in addition to those two induced by the THz laser lines from a slightly misaligned resonator. In harmonic mixing between a THz laser line and a microwave local oscillator, the highest harmonic number we could get was 490 with a signal-to-noise ratio of 9 dB at the intermediate frequency. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119836
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