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  • American Institute of Physics (AIP)  (41)
  • National Academy of Sciences  (5)
  • American Meteorological Society  (2)
  • 11
    Electronic Resource
    Electronic Resource
    CdTe/MgTe heterostructures: Growth by atomic layer epitaxy and determination of MgTe parameters (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6257-6265 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic layer epitaxy (ALE) is investigated for the binary semiconductor MgTe. Reflection high-energy electron-diffraction studies on MgTe atomic deposition, together with x-ray diffraction, high-resolution transmission electron microscopy, and photoluminescence experiments on ALE-grown CdTe/MgTe superlattices are reported. They reveal that an autoregulated growth at 0.7±0.1 MgTe monolayer/ALE cycle can be achieved in a substrate temperature range between 260 and 300°C. New values of the zinc-blende MgTe lattice parameter, aMgTe=6.420 ±0.005 A(ring), of the ratio of the elastic coefficients 2c12c11 (MgTe)=1.06, and of the 300 K MgTe band gap, EG=3.5 eV, are obtained by correlating x-ray-diffraction and optical results. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363714
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  • 12
    Electronic Resource
    Electronic Resource
    Thermal wave propagation in thin films on substrates (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5266-5269 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple dispersion equation for surface thermal waves propagating along a solid surface covered with a thin film of higher thermal conductivity is presented. It is shown to describe well phase measurements with a photothermal microscope carried out on metal films on glass substrates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359702
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  • 13
    Electronic Resource
    Electronic Resource
    Measuring local thermal conductivity in polycrystalline diamond with a high resolution photothermal microscope (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2966-2972 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A photothermal microscope that provides micrometer lateral and submicrometer depth resolution was designed. Thermal conductivity measurements with modulation frequencies up to 12 MHz on single grains in polycrystalline diamond demonstrate its lateral resolution power even for a highly conducting material. Measured conductivities strongly depend on the averaged volume and values up to 2200 W/mK are found in the high frequency limit where the properties inside a grain are sampled. The capability of the instrument to measure thermal parameters on thin films is demonstrated for gold films evaporated on quartz with a thickness ranging from 20 to 1500 nm. Measurements reveal a strong thickness dependence for both thin film conductivity and the contact resistance between film and substrate. Thermal conductivity decreases monotonically from 230 to 30 W/mK whereas the contact resistance rises from 2×10−7 to 8×10−6 m2K/W with decreasing film thickness. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364329
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  • 14
    Electronic Resource
    Electronic Resource
    Quantitative interfacial profiles in CdTe/Mn(Mg)Te heterostructures (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 756-764 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured by high resolution transmission electron microscopy (HRTEM) the width of interfaces in two II–VI heterostructures: CdTe/MnTe and CdTe/MgTe, as a function of the growth mode. A critical review of the different parameters involved in the direct determination of the chemical profile by HRTEM enables us to precisely determine the sensitivity and accuracy of the methods on these particular materials. The measured interface width is of the order of 2.5–3 monolayers (ML) and is compatible with an exchange mechanism involving the monolayer being grown and the last deposited monolayer. Several growth procedures were compared: conventional molecular beam epitaxy and atomic layer epitaxy (ALE). In the case of saturated and oversaturated ALE the inverse MnTe/CdTe interface is no longer planar. A destabilization of the growth front occurs when one or more Mn monolayers per cycle are deposited, through the formation of MnTe islands. Thermal interdiffusion seems to be negligible in the case of Mn. The present HRTEM values for the interface widths extend the results obtained by magneto-optical measurements to higher concentration values and confirm the exchange mechanism. The higher value obtained by x-ray reflectivity (4.7 ML) is explained by the large difference of the average volume on which the measurement is performed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368134
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  • 15
    Electronic Resource
    Electronic Resource
    Interface dilution and morphology of CdTe/MnTe superlattices studied by small- and large-angle x-ray scattering (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7266-7274 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed small- and large-angle x-ray scattering experiments on CdTe/MnTe superlattices. The Fresnel optical method and the distorted wave Born approximation were used to extract from small-angle measurements out-of-plane and in-plane information about the interfaces. Specular reflectivity shows that the interface roughness is quite high (about 7 Å) for all superlattices. The effective MnTe concentration, directly determined from the refractive index profile, is successfully used to simulate the structured nonspecular scattering, and to determine the lateral correlation length of the interface roughness (about 1500±750 Å). Moreover, it is shown that the layers are almost completely correlated over the sample thickness. The thickness fluctuations along the growth direction are estimated from the analysis of the large-angle (004) reflection, and the effective MnTe profile is also checked by dynamical simulation. It is shown that the small- and large-angle results are in good agreement. The MnTe profile width deduced from x-ray reflectivity is slightly overestimated due to the large integration area of this technique. An estimation of the local MnTe profile is given. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372979
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  • 16
    Electronic Resource
    Electronic Resource
    Large and small angle x-ray scattering studies of CdTe/MgTe superlattices (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1951-1957 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed large and small angle x-ray scattering measurements on CdTe/MgTe superlattices. The individual thicknesses of the CdTe and MgTe layers, together with the period dispersion and the crystallographic quality of the stacking, were extracted from large-angle x-ray diffraction. The Fresnel optical method and the distorted wave Born approximation were used to analyze the small angle x-ray scattering data. Specular reflectivity shows that the interface roughness is quite large for the two CdTe/MgTe superlattices grown either by conventional molecular beam epitaxy or by atomic layer epitaxy with however in the latter case a strong asymmetry between the direct and inverted interfaces. The effective MgTe concentration is determined from the refractive index. A model of correlated interface profiles is successfully used to simulate the diffuse scattering, and to gain access to the lateral correlation length of the roughness (Λ(parallel)=1500±750 Å for both samples); moreover, we demonstrate that the layers are almost completely correlated over the sample thickness in the growth direction. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370992
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  • 17
    Electronic Resource
    Electronic Resource
    Strain-balanced Si/SiGe short period superlattices: Disruption of the surface crosshatch (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 845-849 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effects of inserting Si/Si0.6Ge0.4 strain-balanced superlattices (SLs) into Si0.8Ge0.2 (001) virtual substrates. The SiGe SL layer thickness chosen was larger than the critical thickness for elastic relaxation and generated numerous hemicylindrical features oriented along the 〈100〉 directions. These features lead, when covered by Si0.8Ge0.2, to a disruption of the well-ordered surface crosshatch along the 〈110〉 directions, and to a significant lowering of the surface roughness. There is also evidence for some filtering of the threading dislocations by the SL. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370813
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  • 18
    Electronic Resource
    Electronic Resource
    Self-regulated growth of tilted superlattices by atomic layer epitaxy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3151-3153 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a self-regulated method for the growth of tilted superlattices. It relies on the reconstructed surfaces alternatively stabilized during the atomic layer epitaxy (ALE) of compound semiconductors. The c(2×2)+(2×1) Cd-stabilized and the (2×1) Te-stabilized surfaces alternatively formed during the ALE of CdTe and CdMn(Mg)Te ensure a self-regulation of the growth at 0.5 monolayer deposited per ALE cycle for both CdTe and CdMn(Mg)Te. We are thus able to overcome the problem of precise flux control inherent to tilted superlattices. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121576
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  • 19
    Electronic Resource
    Electronic Resource
    Growth of CdTe/MnTe tilted and serpentine lattices on vicinal surfaces (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1113-1115 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown by atomic layer epitaxy CdTe/MnTe tilted and serpentine superlattices. These heterostructures are formed by depositing in the step-flow growth mode fractional monolayer superlattices (CdTe)m(MnTe)n, with p=m+n∼1, onto 2 °A and 2 °B Cd0.95Zn0.05Te vicinal substrates. Transmission electron microscopy images reveal a good in-plane CdTe/MnTe separation and a uniform short-range superlattice period. The very existence of those superlattices imply that Te-based vicinal surfaces present a regular array of monomolecular steps, with no important step meandering and no step bunching. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118501
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  • 20
    Electronic Resource
    Electronic Resource
    Line mixing and nonlinear density effects in the ν3 and 3ν3 infrared bands of CO2 perturbed by He up to 1000 bar (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 7306-7316 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present high density experimental and theoretical results on CO2–He absorption in the ν3 and 3ν3 infrared bands. Measurements have been made at room temperature for pressures up to 1000 bar in both the central and wing regions of the bands. Computations are based on an impact line-mixing approach in which the relaxation operator is modeled with the energy corrected sudden (ECS) approximation. Comparisons between experimental and calculated results demonstrate the accuracy of the ECS approach when applied to band wings and band centers at moderate densities. On the other hand, small but significant discrepancies appear at very high pressures. They are attributed to a number of reasons which include nonlinear density dependence due to the finite volume of the molecules, neglected contributions of vibration to the relaxation matrix, and incorrect modeling of interbranch mixing. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.469042
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