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  • 11
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    Impact of interfacial InAs layers on Al2O3/GaSb metal-oxide-semiconductor interface properties (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-03-25
    Description: We have systematically studied the impact of interfacial InAs layers on Al 2 O 3 /GaSb metal-oxide-semiconductor (MOS) interface properties. The interfacial InAs layers improved the capacitance versus voltage ( C-V ) curves of the Al 2 O 3 /GaSb MOS capacitors (MOSCAPs) fabricated by an ex-situ process. The minimum interface-trap density ( D it ) value of an Al 2 O 3 /1.5-nm-thick InAs/p-GaSb MOSCAP is ∼6.6 × 10 12  cm −2 eV −1 , which is reduced by ∼50% from that of ∼1.4 × 10 13  cm −2 eV −1 in an Al 2 O 3 /p-GaSb MOSCAP. Also, the interfacial InAs layers significantly improved the C-V curves of the Al 2 O 3 /n-GaSb MOSCAPs. The InAs layer can improve the Al 2 O 3 /GaSb MOS interface properties both in valence band side and in conduction band side.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 12
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    InAs/GaSb-on-insulator single channel complementary metal-oxide-semiconductor transistors on Si structure (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-11-24
    Description: We demonstrate a single channel III–V complementary metal-oxide-semiconductor (CMOS) transistors by ultrathin body InAs/GaSb-on-insulator (-OI) channels on Si. The ultrathin InAs layers with the quantum confinement and tight gate-control of the identical InAs/GaSb-OI channel can realize III–V CMOS operation. The quantum well InAs/GaSb-OI on Si structures with the proper thickness of the InAs and GaSb layers can allow us to operate both n-channel and p-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs and p-MOSFETs) with high channel mobilities in an identical InAs/GaSb-OI transistor. The InAs thickness needs to be ≲2.5 nm for CMOS operation in the single channel InAs/GaSb-OI structure.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 13
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    Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-07-01
    Description: We have studied the impact of process temperature on interface properties of GaSb metal-oxide-semiconductor (MOS) structures fabricated by an ex-situ atomic-layer-deposition (ALD) process. We have found that the ALD temperature strongly affects the Al 2 O 3 /GaSb MOS interface properties. The Al 2 O 3 /GaSb MOS interfaces fabricated at the low ALD temperature of 150 °C have the minimum interface-trap density ( D it ) of ∼4.5 × 10 13  cm −2 eV −1 . We have also found that the post-metalization annealing at temperature higher than 200 °C degrades the Al 2 O 3 /GaSb MOS interface properties. The low-temperature process is preferable in fabricating GaSb MOS interfaces in the ex-situ ALD process to avoid the high-temperature-induced degradations.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 14
    Electronic Resource
    Electronic Resource
    Molecular beam studies of the photodissociation of benzene at 193 and 248 nm (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 4222-4233 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The photodissociation processes of benzene following excitation at 193 and 248 nm have been studied by molecular beam photofragmentation translational spectroscopy. When benzene was excited to the 1 B1u state by absorption at 193 nm, dissociation occurred through three primary channels, C6H5+H (80%), C6H4+ H2 (16%), and C5H3+CH3 (4%), following internal conversion to the vibrationally excited ground state. When benzene was excited to the 1 B2u state at 248 nm, two primary dissociation channels, C6H4+H2 (96%), and C5H3+CH3 (4%), were observed. Photodissociation to produce two C3H3 was induced by two photon absorption of benzene at both 193 and 248 nm. Numerous secondary photodissociation processes of the primary photoproducts were also observed at both 193 and 248 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.457780
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  • 15
    Electronic Resource
    Electronic Resource
    Ru L edge x-ray absorption studies of the electronic structure of Ru3(CO)12 adsorption and the formation of Ru–Cu bimetallics on Cu(111) (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 475-477 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Ru L2,3 edge XANES (x-ray absorption near edge structure) together with AES (Auger electron spectroscopy) and LEED (low energy electron diffraction) studies of Ru3(CO)12 adsorbed on Cu(111) reveal the following: (a) Ru3(CO)12 adsorbs molecularly on Cu(111) at low temperature ((approximately-less-than)−50°). (b) Upon electron bombardment, Ru3(CO)12 dissociates to form bare Ru aggregates which exhibit very broad Ru L2,3 white lines and featureless absorption in the XANES spectrum indicating that the Ru atoms are not well ordered on the Cu(111) surface. (c) Annealing of the bare Ru aggregates on Cu(111) at 450 °C results in the formation of Cu/Ru bimetallic clusters in which the Ru atoms are in the core and exhibit bulk-like Ru L2,3 XANES while the surface is covered with Cu atoms. Analysis of the Ru L3 white line intensity indicates that charge redistribution in the Ru d band occurs upon the transformation from the bare Ru aggregates to the bimetallic Cu/Ru clusters on Cu(111).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.454628
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  • 16
    Electronic Resource
    Electronic Resource
    Dynamics of Cs2 excited by a synchronously pumped mode-locked dye laser, and the effects of magnetic field (1987)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 87 (1987), S. 1987-1993 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: When the Cs2 molecule was excited by a dye-laser line of 15 841 cm−1, the fluorescence from the energy-transferred states as well as the resonance fluorescence fromthe optically excited levels, which were assigned to C 1Πu and d 3Πu, were observed. We measured the picosecond time-resolved fluorescence intensity by changing the vapor pressure and the temperature. The decay curves were analyzed by a least-squares curve fitting, and the lifetimes in the collisionless limit and the collision cross sections were determined. From the consideration of the rise and decay rates of fluorescence intensities, the kinetic pathways of the collisional energy transfer were estimated. The intensity of the fluorescence d 3Πu–X 1Σ+g was found to decrease appreciably in the presence of an external magnetic field. The magnetic field effect was estimated to be due to the predissociation induced by an electronic Zeeman interaction between the d 3Πu and c 3Σ+u states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.453172
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  • 17
    Electronic Resource
    Electronic Resource
    Dissociation of cyclohexene and 1,4-cyclohexadiene in a molecular beam (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 4118-4127 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Molecular-beam photofragmentation translational spectroscopy of cyclohexene and 1,4-cyclohexadiene was carried out using 193 nm and IR multiphoton excitation. At 193 nm, both the retro-Diels–Alder reaction of cyclohexene and H2 elimination from both molecules were observed in the ground electronic state, indicating the occurrence of internal conversion from the initially excited electronic states. The retro-Diels–Alder reaction is shown to be concerted up to an internal energy higher than 148 kcal/mol. Hydrogen-atom elimination was also observed for both molecules following 193 nm excitation. The H atom is eliminated from an excited state of cyclohexene and is assigned to be from a carbon adjacent to the double bond, with a corresponding C–H bond energy of 87±3 kcal/mol. It is shown that the peak of the translational energy distribution for concerted dissociation in the ground state is determined mainly by the dynamics of the potential-energy release along the reaction coordinate, and is not sensitive to either the amount of internal energy or the form of excitation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456841
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  • 18
    Electronic Resource
    Electronic Resource
    A study of the D 1Σ+u–X 1Σ+g band system of Cs2 (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 1209-1214 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The transition lines to the low v' levels of the D 1Σ+u state are overlapped with the lines of the C 1Πu –X 1Σ+g transition. By choosing an appropriate wave number through a monochromator to observe a selected series of the D 1Σ+u (v',J±1)–X 1Σ+g (v‘,J) transition of Cs2, we measured the fluorescence intensity as a function of wave number of the laser line. 1237 spectral lines have been assigned to this band system of J'=4–108, v'=0–5. The Dunham coefficients of the D 1Σ+u state, which are useful to reproduce the measured line positions and also to construct a reasonable RKR potential curve, were determined by an iterative procedure. The molecular constants reproduced the observed 983 nonoverlapping line positions with a standard deviation of 0.0106 cm−1. The electronic term energy Te, the dissociation energy De, and the equilibrium internuclear distance Re of the D 1Σ+u state were determined to be 16 698.997 cm−1, 1547.6±0.8 cm−1, and 5.712 A(ring), respectively. The potential curves of the D 1Σ+u and C 1Πu states were estimated to cross at R=5.85 A(ring) and E=16 700 cm−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.455171
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  • 19
    Electronic Resource
    Electronic Resource
    Nonplanar adsorption and orientational ordering of porphyrin molecules on Au(111) (2001)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 115 (2001), S. 3814-3818 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Saddle-shaped deformation of planar porphyrin molecules is accomplished by rotations of four phenyl-based substituents, which results from optimum adsorption onto Au(111) surface. The nonplanar macrocyclic conformation is clearly visualized by using low-temperature scanning tunneling microscopy and confirmed by molecular orbital calculations. Inside of the supramolecular molecular islands, we find that two different orientations of the nonplanar porphyrins are randomly distributed. An orientational ordering is obtained after short thermal excitations, which should be associated with steric intermolecular interactions between substituents. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389276
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  • 20
    Electronic Resource
    Electronic Resource
    Structure and energetics of Lin(OH)n−1 (n=2–5) clusters deduced from photoionization efficiency curves (2001)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 114 (2001), S. 152-159 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Ionization efficiency curves (IECs) were measured for Lin(OH)n−1 (n=2–5) clusters generated by reactions of laser-ablated lithium metal with water vapor, using photoionization time-of-flight mass spectrometry. The measured IECs are well-reproduced with a simulation involving Franck–Condon factors, enabling to identify the global-minimum structure of the clusters predicted in our theoretical study [Tanaka et al., J. Chem. Phys. 113, 1821 (2000)]. Hyperlithiated structures (HLS), in which an excess electron is delocalized, are identified for the cluster with n=2 and 3, while electron-localized or segregated structure (ELS) are for those with n=3–5. Adiabatic ionization energies were determined as 4.053±0.003 eV for HLS of Li2OH, 3.687±0.003 eV for HLS of Li3(OH)2, 4.133±0.003 eV for ELS of Li3(OH)2, and 3.418±0.009 eV for ELS of Li4(OH)3. The ionization energy of Li5(OH)4 was determined as 3.60±0.11 eV by a linear extrapolation of IEC. For Li3(OH)2, the energetics of two lowest-energy isomers is discussed based on the observed abundance ratio. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1329645
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