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  • 11
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1924-1928 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oligosilanes bridging microgaps between silicon microcrystallites were investigated as a possible model for the origin of the intense visible photoluminescence of porous silicon by means of the semiempirical molecular-orbital method. The incomplete structural relaxation of the oligosilane bridge after the photoexcitation was found to be a key factor to give the visible photoluminescence. The calculated structure-insensitive photoexcitation energy around 3.3 eV and the structure-sensitive light emission energy around 1.2–2.1 eV are consistent with the experimental evidence. The sufficient transition probabilities between the concerning electronic states support the high efficiency of photoluminescence. Durabiliy of the structure under the photoexcitation was also suggested. The model is valid even if the silicon microcrystallites are partly or thoroughly replaced by silicon oxides particles as is more realistic for the porous silicon exposed to the air.
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  • 12
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4693-4700 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal quenching properties of disordered superlattices (d-SLs) are experimentally investigated. Three types of d-SLs with (1) various band-gap differences, (2) various unit lengths of disorder, and (3) various appearance probabilities of disordered layers are used for experiments. Thermal quenching properties of photoluminescence intensities are investigated for the estimation of strength of disorder. Consistent results are obtained in that the thermal quenching becomes small with increasing disorder for each type of d-SL. Abrupt changes in the thermal quenching characteristics are observed at the type-I/type-II transitions of AlyGa1−yAs/GaAs d-SLs and o-SLs. © 1995 American Institute of Physics.
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  • 13
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1284-1287 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky characteristics of undoped AlInAs grown by metal-organic chemical-vapor deposition have been investigated. I-V characteristics and their dependence on donor concentrations in AlInAs layers were explained well by assuming the existence of an interfacial layer. The presence of oxygen atoms at the metal-AlInAs interface was revealed by Auger electron spectroscopy measurements. The oxide formation on AlInAs surface may be an inevitable result because of the high composition of aluminum atoms in AlInAs. Reduction in donor concentration in AlInAs layers is effective in minimizing the influence of the interfacial layer on barrier height lowering. Reduction in gate leakage current was successfully demonstrated for fabricated GaInAs/AlInAs high-electron-mobility transistors by reducing donor concentration in AlInAs Schottky layers.
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  • 14
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mechanisms of molecular beam epitaxy have been investigated for GaAs and AlAs by growing and analyzing the shapes of facet structures consisting of an (001) top surface and two (111)B side surfaces. It is found that all of the Ga flux on the three facet planes is incorporated into the film, but the growth rates on (111)B and (001) depend strongly on the As flux and are mainly determined by the diffusion of Ga ad-atoms between the two planes. In contrast, the diffusion of Al is found to be almost negligible, irrespective of the As flux. By analyzing the shape of the facet, the diffusion length, λ, of Ga on a (001) surface is estimated to be about 1 μm at 580 °C, while that of Al is about 0.02 μm. On (111)B, λ of Ga is found to be several μms. The reflectivity of diffusing Ga atoms is found to be far less than 1 for the (001)-(111)B boundary, and almost unity at facet boundaries where the (111)B side surfaces are bound by the (11¯0) side walls.
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  • 15
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 347-351 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A few mololayers of InAs is heteroepitaxially grown on GaAs substrate by molecular-beam epitaxy. Structure and optical properties are investigated. Reflection high-energy electron-diffraction observation reveals that an InAs layer forms a three-dimensional structure with specific facets after two-dimensional growth. The transmission electron microscope observation shows that these structures have structural anisotropy in the growth plane. Photoluminescense spectroscopy shows that the luminescence from the InAs structures exhibits the polarization property caused by the quantum dot effect of the structural anisotropy.
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  • 16
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5318-5323 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A disordered superlattice, a recently proposed artificially constructed material, is fabricated and photoluminescent properties and optical absorption are investigated. Disorder is intentionally introduced into the period of the superlattice in order to enhance its photoluminescence. The photoluminescent temperature dependences and the optical absorption spectra of Al0.5Ga0.5As bulk alloy, AlAs/GaAs ordered superlattice, and AlAs/GaAs disordered superlattice are studied and compared. The optical absorption spectra suggest that localized states are created in the band tail of the AlAs/GaAs disordered superlattice. The photoluminescence spectra of the disordered superlattice are strongly dependent on the localized states, and the temperature dependence of photoluminescence intensities obeys the same relation IPL∝[1+A exp(T/T0)]−1 as that reported for amorphous semiconductors.
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  • 17
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6529-6531 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The modulation of interband-resonant light by intersubband-resonant light using an n-doped quantum well is proposed, and results of the theoretical analysis are reported. It is shown that a large change in absorption coefficient from 100 to 3160 cm−1 for interband-resonant light can be obtained by changing the intensity of intersubband-resonant light from 0 to 1 MW/cm2. Very fast modulation speed (∼ps) can be expected.
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  • 18
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 46-59 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Various approximations to the transition dipole moment matrix element 〈n'||M||n(approximately-greater-than) are compared with each other and to exact (numerical) values of this overlap integral for different n→n' transitions in a Morse potential with a linear dipole moment function. By partitioning the numerical integral into different contributions that involve the classically allowed and forbidden regions of each wave function, we have learned what conditions must be satisfied for validity of the different approximations. In particular, we consider the Landau approximation to the quasiclassical matrix element in which the exact wave function for the upper state is replaced by the Wentzel–Kramers–Brillouin (WKB) wave function in the classically allowed region of that state. We find that the Landau approximation is more accurate than might have been expected because of the compensation of the neglected tunneling contribution by the singular behavior of the WKB wave function in the classically allowed neighborhood of the turning point. Based on this study, we suggest an improved semiclassical approximation for transition dipole matrix elements that involve an arbitrary dipole moment function. This method is applied to the n'−0 transition of a Morse oscillator using a linear dipole moment function; it can reproduce the exact values of the transition dipole moment matrix element to better than 5% for n'=1 to n'=15. Under the condition that the dipole moment function is slowly varying or decreases monotonically with increasing internuclear separation, a simple expression is presented for estimating relative strengths of neighboring high overtone transitions.
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  • 19
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have achieved long-pulse plasma heating using a negative-ion-based neutral beam injector (NBI) in the large helical device (LHD), where the confinement magnetic field is generated by only external superconducting coils. In the initial long-pulse experiments at lower power than that in short-pulse experiments, 80 keV–1.1 MW NBI heating lasted for 10 s with a little increase in the plasma density at the pulse end. Almost steady-state plasma heating was achieved for 21 s with 66 keV–0.6 MW NB injection. Plasma relaxation oscillation phenomena at a period of 1–2 s were also observed for 20 s. Above 1 keV plasma was easily sustained with a long-pulse NBI heating in LHD, without the current drive nor the disruption in tokamaks. Negative ion source operation was stable and the cooling water temperature rise of beam accelerator grids was nearly saturated with a temperature rise below 10 °C. For a higher power injection, the pulse duration is determined by the beam blocking, where the reionization loss is exponentially increased together with an increase in outgas in the injection port. The port conditioning by a careful repetition of injection is effective to the extension of the injection duration and the plasma maintenance duration. The initial long-pulse NBI heating at the reduced power has demonstrated an ability of steady-state operation in superconducting LHD. © 1999 American Institute of Physics.
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  • 20
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The 32-channel SQUID system described here is used for diagnosing heart disease by measuring the x and y components of the cardiac magnetic field. To detect a magnetic field parallel to the body surface, it uses a compact hybrid superconducting quantum interference device (SQUID) gradiometer consisting of a planar pickup coil (fabricated using thin-film techniques) and a square double-washer dc-SQUID having large voltage-flux transfer function. The SQUIDs are operated in a flux-locked mode using simple readout circuits connected directly to the preamplifier without additional positive feedback. The system is installed in a magnetically shielded room in a hospital. A low noise characteristics lower than 10 ft/(square root of) Hz in a white noise is obtained in the hospital. Examples of tangential magnetocardiogram (MCG) measurements presented here show that the MCG obtained using this gradiometer makes it easy to visually estimate the electrophysiological behavior of the heart. © 1995 American Institute of Physics.
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