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  • 11
    Electronic Resource
    Electronic Resource
    Solid-solubility limits of Be in molecular beam epitaxy grown AlxGa1−xAs layers and short-period superlattices (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4312-4315 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The redistribution of Be in highly doped AlxGa1−xAs layers and AlxGa1−xAs/AlAs(GaAs) short period superlattices (SPSL) during molecular beam epitaxy was investigated by secondary ion mass spectrometry (SIMS) depth profiling. Be outdiffuses significantly from these layers and, additionally, segregates in growth direction. Conversely, Be is depleted and incorporated only up to a solid-solubility limit depending on the Al content. SPSLs with shorter period are disordered and show the solid-solubility limits of homogeneous AlxGa1−xAs layers with the same average composition. Be solid-solubility limits in AlxGa1−xAs layers covering the whole range from GaAs to AlAs are derived from the SIMS depth profiles. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371362
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  • 12
    Electronic Resource
    Electronic Resource
    Shallow and deep donors in n-type Ga1−xAlxAsB: Sn grown by metalorganic vapor-phase epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4518-4523 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic properties of Sn, a well-known group IV n-type dopant in GaAs, were studied in Ga1−xAlxAs alloys for the whole compositional range. These Sn-doped Ga1−xAlxAs epitaxial layers were grown by metalorganic vapor-phase epitaxy; Hall measurements were carried out for values ranging from x=0 to 1, Hall data for 0〈x〈0.4 were interpreted assuming a shallow donor bound to the Γ band, and a deep donor with an ionization energy of about 100 meV. Photoluminescence spectra of selectivity excited donor acceptor pairs show the existence of a deep donor at 100 meV below the Γ minimum for x〉0.2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340149
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  • 13
    Electronic Resource
    Electronic Resource
    Plasma potentials of 13.56-MHz rf argon glow discharges in a planar system (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 59-66 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The plasma potential of 13.56-MHz low-pressure argon glow discharges has been measured for various modes of applying the rf power in a geometrically asymmetric planar system. The plasma potential is determined from the energy distribution of positive ions incident on the grounded electrode. The voltages on the excitation electrode (target electrode) are carefully measured and the capacitive sheath approximation is used to relate these measured voltages to the measured plasma potential. This approximation is successful in most of the situations encountered in this low-pressure (20 mTorr) relatively low-power density regime. The effects of superimposing dc voltages on the excitation electrode are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335396
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  • 14
    Electronic Resource
    Electronic Resource
    Frequency dependence of ion bombardment of grounded surfaces in rf argon glow discharges in a planar system (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3350-3355 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy distribution of positive ions incident on a grounded surface in a low-pressure argon planar rf glow discharge system has been measured as a function of excitation frequency from 70 kHz to 13.56 MHz for both capacitive and direct coupling of the rf power to the excitation electrode. The results are interpreted by taking into consideration both the transit time for the ion to traverse the sheath relative to the period of the rf excitation voltage, and the resistive or capacitive characteristics of the sheaths. The importance of system geometry and of the dc potential of the excitation electrode (as determined by external circuitry) on the maximum energy of ions incident on grounded surfaces is shown.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335797
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  • 15
    Electronic Resource
    Electronic Resource
    Quaternary GaInAsN with high In content: Dependence of band gap energy on N content (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2448-2450 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quaternary pseudomorphically strained GaInAsN films and double-quantum wells were grown by plasma assisted molecular-beam epitaxy on an InP substrate. The In content ranged from 53% to 70% while the N content was varied between 0% and 2.4%. A reduction of compressive strain and a low-energy shift of photoluminescence (PL) peak position was observed with increasing N concentration, accompanied by a reduction in PL peak intensity and increase in linewidth. The net effect of N incorporation on the GaInAsN band gap energy was calculated from the measured PL peak energies. The thus obtained composition dependent GaInAsN band gap energy was fitted using the band anticrossing model, yielding values for the interaction parameter CMN for high In-containing GaInAsN being only slightly smaller than that reported for low In-content GaInAsN on GaAs. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1467612
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  • 16
    Electronic Resource
    Electronic Resource
    Improvement of λ(approximate)5 μm quantum cascade lasers by blocking barriers in the active regions (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2048-2050 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the improvement of quantum cascade lasers emitting at λ∼5 μm by introducing AlAs blocking barriers together with strain-compensating InAs layers into the active regions. The blocking barriers are designed to selectively prevent electrons in the initial laser state from tunneling out of the active region, while maintaining the high tunneling probabilities of the electrons in the final laser states. Adopting blocking barriers, the maximum peak power per facet at 77 K (300 K) is increased from 285 (30 mW) to 900 mW (240 mW), and the maximum operation temperature in pulsed mode has been improved from 320 to 350 K with respect to a reference sample without blocking barriers. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1462866
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  • 17
    Electronic Resource
    Electronic Resource
    GaAsN interband transitions involving localized and extended states probed by resonant Raman scattering and spectroscopic ellipsometry (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3592-3594 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interband transitions in GaAs1−xNx (0≤x≤0.033), involving a localized resonant N-derived energy level and the GaAs-like L conduction and valence band states, have been studied by resonant Raman scattering and spectroscopic ellipsometry, respectively. Raman scattering by the GaN-like LO2 phonon showed for x(approximate)0.01 a pronounced resonant enhancement for incident photon energies approaching the mostly N-related E+ transition at around 1.8 eV, but not at the E1 and E1+Δ1 interband transitions, reflecting the strongly localized nature of both the N-related electronic level and the Ga–N vibrational mode. Spectroscopic ellipsometry, in contrast, being sensitive to the overall dielectric function of the GaAsN, revealed the effect of N incorporation on the GaAs-like E1 and E1+Δ1 interband transitions, which is a high-energy shift with increasing N-content accompanied by a significant broadening. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1329167
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  • 18
    Electronic Resource
    Electronic Resource
    Piezoelectric field and confinement effects on the dielectric function spectrum of InGaN/GaN quantum wells (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 79-81 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In0.13Ga0.87N/GaN double heterostructures and quantum wells (QWs) have been studied by room-temperature photoluminescence (PL) and spectroscopic ellipsometry (SE). PL revealed the presence of strong piezoelectric fields, which strongly influence the luminescence properties for InGaN QW widths in the 3–12 nm range. The pseudodielectric function spectrum derived from the SE measurements were analyzed using a multilayer approach, describing the dielectric function of the individual layers by a parametric oscillator model. The fundamental band-gap resonance in the InGaN dielectric-function spectrum was found to broaden for an InGaN layer width of 12 nm, as compared to bulk-like InGaN layers, due to piezoelectric field effects. For a much narrower QW width of 1.7 nm, however, quantum confinement was found to dominate over piezoelectric-field effects, resulting in a much sharper band-gap resonance shifted to higher energies and an increased oscillator strength. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125662
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  • 19
    Electronic Resource
    Electronic Resource
    Preferential formation of Al(Single Bond)N bonds in low N-content AlGaAsN (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2081-2083 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The bonding of nitrogen in low N-content AlxGa1−xAs1−yNy with x≤0.05 and y≤0.04 has been studied by Raman spectroscopy. Upon the addition of Al to GaAsN, additional vibrational modes are observed at around 450 cm−1, which is below the GaN-like longitudinal optical (LO) phonon mode centered at 470 cm−1. These modes are attributed to the formation of Al and N containing complexes with Al-to-N bonding. With increasing Al content the Al–N related modes gain intensity at the expense of the GaN-like mode, and they become the dominant N-related feature for an Al-content of 5% at a fixed N content of 1%. On the other hand, increasing the N content from 0% up to 4% at a constant Al concentration of 5% results first in the appearance and eventual saturation in intensity of the AlN-like modes, accompanied by a steep increase in intensity and eventual dominance of the GaN-like vibrational mode. Simultaneously the AlAs-like LO2 phonon mode shows a drastic decrease in intensity for N contents exceeding 2%. All these observations strongly indicate that there is a preferential formation of Al(Single Bond)N bonds in low N- and Al-content AlGaAsN, which is in direct contrast to GaInAsN, where even after thermal annealing the GaN-like mode remains dominant in the Raman spectrum compared to the InN-like modes. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1464660
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  • 20
    Electronic Resource
    Electronic Resource
    Multicomponent structure in the temperature-dependent persistent photoconductivity due to different DX centers in AlxGa1−xAs:Si (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2225-2227 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The persistent photoconductivity of Si-doped AlGaAs has been investigated by temperature-dependent resistance and Hall effect measurements. After illuminating the samples at low temperature, we observe for the first time distinct structures in the temperature-dependent carrier concentration during the subsequent heating process. These structures are interpreted in terms of the existence of different DX levels below the conduction-band edge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103898
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