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  • American Institute of Physics (AIP)  (14)
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  • 11
    Electronic Resource
    Electronic Resource
    Gas source molecular beam epitaxy of FeSi2/Si(111) heterostructures (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2271-2273 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial iron disilicide thin layers have been grown on silicon by gas source molecular beam epitaxy (GSMBE) in the temperature range 450–550 °C. Fe(CO)5 and SiH4 are used as sources for the silicide growth on a heated Si(111) surface. The growth phases are characterized in situ by means of high-resolution electron energy loss spectroscopy, ultraviolet and x-ray photoelectron spectroscopies. The formation of an epitaxial metallic γ-FeSi2 layer at the interface with the silicon substrate is revealed and no complete relaxation of this strained metastable interface layer is observed, as the growth proceeds with the semiconducting equilibrium β-FeSi2 phase. The coexistence in the GSMBE grown heterostructures of the metallic (CaF2) and semiconducting (orthorhombic) FeSi2 structures is confirmed by cross-section transmission electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109411
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  • 12
    Electronic Resource
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    Growth mode and strain relaxation during the initial stage of InxGa1−xAs growth on GaAs(001) (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 74-76 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth mode and relaxation of the misfit strain of thin InxGa1−xAs layers grown by molecular-beam epitaxy on GaAs(001) were studied by plan-view transmission electron microscopy. The indium concentration was varied between x=0.13 and x=1.0. The transition from two-dimensional to island growth was found at x=0.4. The island growth mode is characterized by islands of different sizes in various states of strain relaxation which is determined by the density of misfit dislocations at the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107379
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  • 13
    Electronic Resource
    Electronic Resource
    Composition evaluation of InxGa1−xAs Stranski-Krastanow-island structures by strain state analysis (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3868-3870 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The compositional analyses of InxGa1−x/GaAs (001) island structures grown by molecular beam epitaxy at a substrate temperature of 560 °C with nominal In contents of x=60% and 100% are presented on the basis of high resolution transmission electron microscopy micrographs. The linear dependence of the lattice parameter on the In content (Vegard's law) is exploited to quantitatively derive composition profiles on an atomic scale by measuring local lattice parameters and displacements. The relaxation of the thin transmission electron microscopy specimen is taken into account by the accurate thickness determination using the quantitative analysis of the information from transmission electron micrographs procedure. The final evaluation step consists of finite element modeling with the appropriate sample geometry, where the In distribution is chosen to obtain the best fit between experimental and simulated displacements. The observed In content is significantly smaller than the nominal In concentration which is due to segregation of In and diffusion of Ga from the GaAs buffer into the island during the growth. The measured mean In concentration of the islands with a nominal In content of 60% (100%) is 24% (45%). © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120528
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  • 14
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    Electronic Resource
    Ordered arrays of vertically correlated GaAs and AlAs quantum wires grown on a GaAs(311)A surface (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 1080-1082 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study GaAs–AlAs short-period superlattices (SPSLs) grown on a GaAs(311)A surface using plan-view transmission electron microscopy (TEM). A strong in-plane compositional modulation with a period of 3.2 nm along the [01¯1] direction is revealed by TEM under chemically sensitive imaging conditions and in high-resolution TEM. Our results confirm the formation of highly ordered vertically aligned arrays of GaAs and AlAs quantum wires formed via self-organized growth. Bright photoluminescence (PL) at room temperature in the green and yellow spectral range is observed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1497994
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