Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 88-90
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Using electroabsorption measurements, we have studied the effects of atomic superlattice ordering on the electronic band structure of InGaAs for different growth parameters. We have observed ordering-induced polarization anisotropy, valence-band splitting and band gap reduction strongest for 550 °C growth and 2°[111]B tilted substrates. Back-folded conduction-band states show an ordering dependent energy shift. The position of the split-off valence-band, however, is almost unaffected. An extension to extremely low growth temperatures exhibits ordering also for 450 °C growth. Atomic force microscopy measurements reveal a temperature-dependent change of InGaAs surface from step-like to island formation. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125665
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