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  • Wiley-Blackwell  (65)
  • American Institute of Physics (AIP)  (24)
  • American Association for the Advancement of Science (AAAS)
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  • 11
    Electronic Resource
    Electronic Resource
    Threshold behavior and electro-optical properties of twisted nematic layers with weak anchoring in the tilt and twist angle (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4211-4216 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Analytical and numerical calculations of threshold behavior and electro-optical characteristics in twisted chiral nematic layers are presented, when weak anchoring in the tilt and twist angle of the director is assumed. An analytical expression for the effective twist angle and the Fréedericksz threshold voltage is derived. In cells with bistabilities, we investigate the influence of the anchoring parameters and device parameters on the width of the hysteresis. Using the 4×4-matrix formalism of Berreman [J. Opt. Soc. Am. 62, 502 (1972)], we demonstrate the influence of the weak anchoring on the transmission-versus-voltage characteristic.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349146
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  • 12
    Electronic Resource
    Electronic Resource
    Structural study of tin and carbon coimplanted silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8417-8419 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The alloy system Six(SnyC1−y)1−x was investigated. The purpose is to form material with reduced strain at silicon heterojunctions. In this work, samples were prepared by coimplantation of tin and carbon ions into silicon wafers within the dosage range 1015–1016 cm−2, followed by rapid thermal annealing. Rutherford backscattering and channeling, Auger sputter profiling, and secondary-ion-mass spectrometry were employed to study the crystallinity, chemical composition, and depth profiles. A near-perfect crystallinity for 0.5 at. % of tin and carbon was achieved. For high-dose implanted samples, tin segregation was observed. This work demonstrates promising features of group-IV semiconductor synthesis by ion implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347410
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  • 13
    Electronic Resource
    Electronic Resource
    On the interaction between two oppositely signed, shielded, monopolar vortices (1998)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 10 (1998), S. 3099-3110 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation two-dimensional dipolar vortices by the interaction between two shielded monopolar vortices with opposite vorticity, as shown in a numerical study by Couder and Basdevant,〈citeref RID="R1" STYLE="SUPERIOR"〉1 is investigated in detail, both experimentally, in a nonrotating stratified fluid and numerically by direct solutions of the two-dimensional Navier–Stokes equations. A comparative study between the laboratory experiments and numerical simulations is performed. The vorticity distribution measured in the early stage of the evolution in the laboratory is used as initial data for the simulations, and an additional damping term in the Navier–Stokes equations, that accounts for the vertical diffusion in the laboratory experiments, is used. The results show that, depending on the initial separation between the vortices, the shields of the monopoles are peeled off and indeed a compact dipole with a linear (ω,ψ)-relationship is formed, or when the monopoles are further apart the shields of the monopoles are perturbed and two tripoles are formed. The characteristics of the emerged dipole are analyzed and a dye visualization of the dipole formation is performed. A second, more general numerical study yields a relationship between the formation time of the dipole and the initial separation distance between the monopoles and it shows that the deshielding process can be explained by the domination of strain over vorticity. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.869838
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  • 14
    Electronic Resource
    Electronic Resource
    Dynamics of a nonlinear dipole vortex (1995)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 7 (1995), S. 2220-2229 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A localized stationary dipole solution to the Euler equations with a relationship between the vorticity and streamfunction given as ω=−ψ+ψ3 is presented. By numerical integration of the Euler equations this dipole is shown to be unstable. However, the initially unstable dipole reorganizes itself into a new nonlinear dipole, which is found to be stable. This new structure has a functional relationship given as ω=αψ+βψ3−γψ5. Such dipoles are stable to head-on collisions and they are capable of creating tripolar structures when colliding off axis. The effects of increasing Newtonian viscosity on the nonlinear dipole is studied revealing that even though the nonlinearity is weakening, the dipole does not relax towards a Lamb dipole. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.868470
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  • 15
    Electronic Resource
    Electronic Resource
    New and versatile ultrahigh vacuum scanning tunneling microscope for film growth experiments (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 2696-2703 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: With the increasing popularity of the scanning tunneling microscope (STM) in surface science, many ideas for additional and new technical features have been proposed. The work herein contributes to this evolution with a special STM design. The STM described is part of an experimental apparatus for thin film growth investigations in ultrahigh vacuum. Besides the STM, the apparatus includes facilities for thermal desorption spectroscopy and Auger electron spectroscopy and a Kelvin probe for measuring dynamic work function changes. The Kelvin probe is optimized for gas adsorption experiments as well as for in situ film growth investigations during metal deposition. These added features combined with the STM and easy sample transfer yield a new powerful tool for in situ controlled preparation and extensive characterization of thin films. In the present work we describe the novel features of this STM and we demonstrate the efficiency of the whole system by giving a few representative results. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149001
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  • 16
    Electronic Resource
    Electronic Resource
    A versatile Kelvin probe for dynamic work function change measurements during gas adsorption and in situ film growth experiments (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 3866-3871 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In the present work, we describe a new Kelvin probe for dynamical work function change (ΔΦ) measurements in ultrahigh vacuum. The construction of the Kelvin probe is especially optimized to meet the experimental conditions for gas-adsorption experiments as well as for in situfilm growth investigations during metal deposition. This is realized by a new setup which enables a change of the geometrical orientation of the vibrating reference electrode with respect to the sample surface. The Kelvin probe combined with thermal desorption spectroscopy, Auger electron spectroscopy, and scanning tunneling microscopy facilities, forms a powerful tool for film growth analysis. The performance of the instrumentation is demonstrated with some representative test experiments for copper deposition on Pt(111). © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148039
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  • 17
    Electronic Resource
    Electronic Resource
    Exposure instrumentation for the application of x-ray lithography using synchrotron radiation : INTERNATIONAL CONFERENCE ON SYNCHROTRON RADIATION INSTRUMENTATION (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 2140-2143 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This paper reviews the recent progress in the development of exposure equipment for x-ray lithography consisting of compact synchrotron radiation source, beamline, and x-ray stepper. This exposure facility is situated door by door to a CMOS-pilot line. The compact storage ring COSY, under assembly in Berlin, is described and calculations are presented, that show that relatively low accumulated current exposure times of some seconds can be expected using a highly sensitive x-ray resist. A simple, inexpensive, and highly reliable beamline has been realized to connect an x-ray stepper and a light source. Several x-ray steppers have been installed for field testing in the nearby lithography laboratory at BESSY, that are equipped with x-ray reflecting mirrors, or a scanning mask and wafer unit for full-field exposure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140803
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  • 18
    Electronic Resource
    Electronic Resource
    Polarized luminescence in CdS/ZnSe quantum-well structures (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 85-87 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence from type II CdS/ZnSe quantum-well structures is found to be polarized with respect to the 〈110〉 directions with polarization degrees up to 20%. The absolute polarization direction is related to the interface bond directions in samples with differently prepared interfaces. The observations are explained by the detailed analysis of the epitaxial growth process and polarization sensitive luminescence experiments. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126885
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  • 19
    Electronic Resource
    Electronic Resource
    Suppression of lateral fluctuations in CdSe-based quantum wells (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1118-1120 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a reduction of inhomogeneous broadening in CdSe-related quantum wells in ZnSe by employing a growth technique that uses a CdS-compound source instead of the standard Cd elemental source for molecular-beam epitaxy. Assisted by the low sticking coefficient of sulfur and possibly an exchange reaction between S and Se, only a small S contamination is observed. A comparison with standard layers reveals an increase in quality and homogeneity by a strong reduction of the photoluminescence (PL) linewidth. Samples obtained by our method show extremely little lateral confinement as indicated by a lack of sharp single dot emission lines in micro PL and the absence of the extensive redshift observed in temperature dependent PL of fluctuating well potentials. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1394172
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  • 20
    Electronic Resource
    Electronic Resource
    Fabrication of photonic crystals by deep x-ray lithography (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1441-1443 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a new microfabrication technique for the construction of three-dimensional photonic crystals. In particular, we used multiple tilted x-ray lithography exposures in order to construct structures with photonic band gaps in the infrared region. First polymethylmethacrylate (PMMA) resist layers with a thickness of 500 μm were irradiated, then the holes in the resist structure were filled with preceramic polymer and subsequent pyrolysis converts the preceramic polymer into a SiCN ceramic. Theoretical results with fitted values of the dielectric constant are in good agreement with the transmission measurements. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120431
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