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  • American Institute of Physics (AIP)  (24)
  • Wiley-Blackwell  (7)
  • American Geophysical Union (AGU)
  • 11
    Electronic Resource
    Electronic Resource
    In situ characterization of plasma-deposited a-C:H thin films by spectroscopic infrared ellipsometry (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 2882-2889 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A computer-controlled rotating polarizer ellipsometer, operating in the infrared spectral region between 3.00 and 3.75 μm, has been developed for in situ characterization of amorphous hydrocarbon (a-C:H) thin films, deposited from methane in a rf plasma-enhanced chemical vapor deposition reactor. Spectroscopic IR ellipsometry permits insight into the chemical bonding structure of a-C:H coatings by the nondestructive detection of infrared stimulated C:H stretch vibrations. It is shown that the sp2CHx/sp3 CHx ratio, the content of bonded hydrogen, the infrared linewidth, and the real refractive index of the films depend on the negative self-bias voltage, which is formed at the samples during the deposition process. A transition from a-C:H films with polymerlike properties to hard a-C:H films was attained at a self-bias voltage of approximately −75 V.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144632
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  • 12
    Electronic Resource
    Electronic Resource
    Modeling of hydrogen implantation into graphite (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4860-4866 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new theoretical framework has been developed which is applicable to the implantation and ion-induced release of hydrogen isotopes in graphite. It provides a physical basis and a refinement of the predictions of the simple model of local saturation and mixing. The model treats the trapping at defects and a local release of trapped atoms by nuclear knock-on. Ion deposition and damage functions are taken from trim simulations. The detrapped atoms may become retrapped or recombine to molecules, which then are transported to the surface by fast molecular diffusion, and subsequently released. By the choice of suitable rate constants in the model calculations, different experimental findings for the implantation and high-fluence self-reemission of deuterons in graphite may be explained consistently. Examples cover the saturation as a function of temperature and energy, depth profiles, gas reemission, thermal desorption, and effects of predamage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341234
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  • 13
    Electronic Resource
    Electronic Resource
    Permeation of implanted deuterium through Ni near room temperature (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2733-2738 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The permeation of 2–22-keV deuterons implanted into 25-μm-thick cold-rolled Ni foils was studied near room temperature. The results are generally characterized by a time lag τ and a steady-state permeation rate J. The variation of τ with beam intensity and temperature indicates an average relative concentration of ∼4×10−4 of saturable bulk traps of binding energy 0.26±0.01 eV, plus a larger concentration of weaker traps. At the highest energy, J is well described by theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335415
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  • 14
    Electronic Resource
    Electronic Resource
    Growth of low-stress cubic boron nitride films by simultaneous medium-energy ion implantation (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 55-57 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that the intrinsic stress in cubic boron nitride films can be significantly relaxed during growth by simultaneous medium-energy ion implantation. The stress in the growing film has been studied in situ using cantilever curvature measurements and has been reduced to below 2 GPa by simultaneous Ar+ or N+ ion implantation with an energy of 70 and 35 keV, respectively. The resulting cubic boron nitride films show an increased long-term stability. The results reveal that the stress in cBN is not reduced due to segregation of boron at grain boundaries. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1430268
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  • 15
    Electronic Resource
    Electronic Resource
    The nitrogen transport in austenitic stainless steel at moderate temperatures (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2194-2196 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for the transport of nitrogen in austenitic stainless steel at temperatures around 400 °C is presented and discussed. The model considers the diffusion of nitrogen under the influence of trapping and detrapping at trap sites formed by local chromium. Nitrogen depth profiles simulated on the basis of the model with diffusion and detrapping activation energies of 1.1 and 1.45 eV, respectively, are in good agreement with experimental nitrogen profiles. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126294
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  • 16
    Electronic Resource
    Electronic Resource
    Mechanism of diffusional transport during ion nitriding of aluminum (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1404-1406 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism of diffusional transport during low-energy ion nitriding of aluminum has been investigated using marker and isotope sequence techniques in connection with ion-beam analysis. For an ion energy of 1 keV and a temperature of 400 °C, it is shown that the nitride grows at the surface with aluminum being supplied by diffusion from the underlying bulk. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126070
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  • 17
    Electronic Resource
    Electronic Resource
    The interplay of sputtering and oxidation during plasma diffusion treatment (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1851-1853 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metals that form dense native surface oxide layers challenge plasma diffusion treatment techniques. Experimental results obtained during nitriding of stainless steel from real-time depth-resolved compositional analysis by elastic recoil detection give insight into the transport kinetics. In agreement with semiquantitative considerations on the oxide removal and the oxide growth, the interplay of sputtering and oxidation emerges as a key parameter. On this background, suggestions for practical applications and optimization of the modification processes are given for different plasma diffusion treatment techniques. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124849
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  • 18
    Electronic Resource
    Electronic Resource
    Light emission from CH and H sputtered from hydrogen-implanted graphite (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2225-2226 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Characteristic spectra of light emission from CH molecules and hydrogen atoms sputtered from hydrogen-implanted graphite are observed. The relative intensities from both species vary with the implanted fluence. The CH yield remains constant while the Hα yield increases. This is consistent with two binding states of implanted hydrogen in graphite.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99539
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  • 19
    Electronic Resource
    Electronic Resource
    Roughness improvement and hardness enhancement in nanoscale Al/AlN multilayered thin films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1951-1953 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Al/AlN multilayered thin films with periodic thickness λ less than 24 nm were developed by ion beam assisted deposition. A considerably small surface roughness comparable to that of the silicon substrate and much smaller than those of both monolithic Al and AlN films was obtained. Over the investigated range of λ, all the multilayers are harder than the homogeneous AlN film, and a significant hardness enhancement by a factor of ∼2 over that of the AlN film was observed in the multilayer with λ of 6 nm. Moreover, the hardness enhancement is not at the expense of the multilayer toughness, with the multilayer Al/AlN films showing improved plasticity as compared with the AlN film. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119752
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  • 20
    Electronic Resource
    Electronic Resource
    On the structure of thin hydrocarbon films (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1771-1773 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We compare reported compositions of a-C:H films in a ternary phase diagram. It is assumed that the films comprised three phases: sp3 hybridized carbon, sp2 hybridized carbon and hydrogen. The data are found to split into two well-separated groups. This separation depends on the method used to measure the sp3/sp2 ratio. We conclude from the comparison of NMR and infrared data that infrared analysis does not provide a quantitative measure of the sp3/sp2 ratio.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110683
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