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  • 1990-1994  (249)
  • 1965-1969  (12)
  • 1930-1934  (2)
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  • 11
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1830-1832 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetization curves of single crystals (La1−xSrx)2CuO4 with various Sr contents were measured. A distinct increase of magnetization with increasing applied field was observed in Sr overdoped compositions, when the magnetic field was applied perpendicular to the CuO2 plane. The field, Bpk , where magnetization showed a maximum value, was strongly dependent on temperature. Its dependence was expressed by a universal relation (square root of)Bpk = c(x)[1−T/Tc(x)] over a wide temperature range; between 4.2 K and Tc. Possible mechanisms which give rise to the observed distinct secondary peak effect are discussed.
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2164-2166 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An ultrasonic method of line focus beam (LFB) acoustic microscopy is applied to quantitative characterization of LiNbO3 wafers destined for optical use. Commercial Z-cut wafers obtained from two optical grade LiNbO3 crystals, with and without 5-mol % MgO doping, are evaluated by measuring the leaky surface acoustic wave (LSAW) velocities. Doping of 5-mol % MgO to LiNbO3 results in an increase of about 1% in the LSAW velocities and in a decrease of about 0.1% in density. Fewer elastic inhomogeneities are observed in the undoped wafer than in the MgO doped wafer. The measured LSAW velocities are compared with the chemical and physical properties, chemical composition, density, lattice constant, refractive index, and Curie temperature. It is shown that the LFB system has a much greater sensitivity and resolution in the determination of these properties than do other analytical methods. It is suggested that this method should be adopted as a new analytical technique for establishment of the crystal growth conditions and for evaluation of optical grade LiNbO3 wafers.
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  • 13
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1111-1113 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the successful growth of high-quality InP/InGaAs double-heterojunction bipolar transistors with heavily Zn-doped base layers (p=4×1019 cm−3) using metalorganic vapor phase epitaxy. Interrupting the growth for 30 min after growing a heavily Si-doped subcollector (n=2×1019 cm−3) is shown to eliminate the excessive nonequilibrium group III interstitials that enhance abnormal Zn diffusivity in the subsequently grown base region. Gummel plots of the fabricated microwave transistors show that they have ideal turn-on characteristics in spite of having only 5-nm-thick undoped spacer layers inserted between the emitter and base. The transistors obtain a maximum oscillation frequency fmax of 178 GHz and a current gain cutoff frequency fT of 126 GHz.
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  • 14
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2496-2498 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High n+ doping ((approximately-greater-than)1019 cm−3 of Si) in the subcollector of InP/InGaAs heterojunction bipolar transistor structures is observed to induce an anomalously high Zn diffusivity and an associated broadening of the base layers. It is proposed that due to Fermi level surface pinning and a long time constant for the recovery of point defect equilibrium the subcollector acts as a continuously operating source of group III interstitials which in turn diffuse into the subsequently grown base region and enhance Zn diffusion via the kick-out mechanism. In this sense, highly n+ doped grown-in subcollector layers may be considered as having the effect of a "time bomb'' in terms of generating undesirable excess point defects during subsequent further crystal growth and device processing.
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  • 15
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 726-728 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A gain-guided laser diode having a curved-mirror-cavity that has coaxial mirrors and a fan-shaped stripe structure has been fabricated by dry etching. Although gain guided, the laser has an astigmatism of 4.1 μm, which is very low compared to conventional laser's. The threshold current of the laser is 35 mA, the longitudinal mode spectrum is multiple, and the transverse optical mode is fundamental. These results are comparable to conventional gain-guided lasers. Etched mirror laser diodes with flat facets have been stably operated over 1500 h under automatic-power control at a power of 3 mW/facet at 50 °C, without facet coating
    Type of Medium: Electronic Resource
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  • 16
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 114-115 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetostriction temperature dependencies in Tb0.3Dy0.7 (Fe1−xMnx)2 were investigated. Mn substitution lowers the spin reorientation temperature, at which magnetostriction shows a sharp drop. Moreover, Mn containing compounds show larger magnetostriction than that for a Mn-free compound at low temperature. Mössbauer measurements show that easy magnetization direction for the Mn containing compound is in the 〈111〉 direction at 300 K, while it is in the 〈100〉 at 77 K. These results indicate that the tetragonal distortion λ100 increases by Mn addition in Tb0.3Dy0.7Fe2.
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  • 17
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of medicinal chemistry 12 (1969), S. 636-638 
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
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  • 18
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 139 (1966), S. 0 
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
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  • 19
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 36-42 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A mm wave amplifier experiment on a free electron laser was performed using an intense, mildly relativistic electron beam (0.7–0.9 MeV) with a combination of a focusing planar wiggler and a weak additional axial magnetic field in the so-called "group 1'' region. A beam transport ratio of over 80%, through the whole wiggler length, was realized. In an amplification experiment, a spatial growth rate of 56 dB/m was obtained at a frequency of 45 GHz, and a power saturation was observed at a level of 6 MW, where the total gain was estimated to be 52 dB. It was shown that the off-axis component of the beam contributes considerably to the rf amplification in the focusing wiggler.
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  • 20
    ISSN: 1365-2958
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: It is known that two proteins of the cellulosomal complex of Clostridium thermocellum (SL and Ss) together degrade crystalline cellulose. SL is a glycoprotein of 210000Da which enhances the binding to cellulose and the activity of Ss, an endoglucanase of 83000 Da. We have previously reported the cloning of a DNA fragment encoding the N-terminal end of the SL protein using antibodies raised against the native protein. A chromosomal walking approach using an EcoRI and a BamHI-Sau3A gene library allowed us to isolate the C-terminal end of the gene. Sequencing of both fragments revealed the existence of a leader peptide as has been found in cellulases of the same organism. This leader sequence is followed by a stretch of 14 amino acids that is identical to the N-terminal amino acid sequence of the native secreted protein. The open reading frame (ORF) of this gene encodes a protein of 196800 Da and is followed by a hairpin loop that could be involved in transcription termination. Within the open reading frame (ORF), we found nine internal repeated elements (IREs) of about 500 nucleotides each. Seven of these sequences displayed 98–100% homology and were located adjacent to each other within the structural gene without intervening regions. The remaining two, located on the N-terminal end of the gene, showed a significantly lower homology. Bearing in mind the inherent instability of reiterated regions, we confirmed the authenticity of our clones by Southern blot analysis using chromosomal C. thermocellum DNA and ruled out the possibility of rearrangements during the cloning and sequencing process. The sequenced gene is designated clpA and the encoded SL protein CipA.
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