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  • 1990-1994  (2)
  • 1980-1984  (10)
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  • 11
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    Unknown
    High temperature properties of GaAlAs/GaAs heteroface solar cells (1980)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: The properties of p-GaAlAs/p-GaAs/n-GaAs heteroface solar cells were determined in the temperature range from 25 C to 350 C. Illumination air mass zero (AM0) current-voltage measurements show that the short circuit current increases as a function of temperature up to 210 C and then decreases up to 350 C. The open circuit voltage and fill factor decrease linearly with increasing temperature. The spectral response shifts toward higher wavelengths with increasing temperature.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: Photovoltaic Specialists Conference; Jan 07, 1980 - Jan 10, 1980; San Diego, CA
    Format: text
    Location Call Number Expected Availability
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    NASA TECHNICAL REPORTS
  • 12
    facet.materialart.
    Unknown
    Simultaneous radiation damage and annealing of GaAs solar cells (1980)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: In this report, concepts and equations are developed to describe the simultaneous radiation damage and annealing of solar cells. The annealing characteristics of three types of defects are employed to study three examples of continuous irradiation and annealing. One example shows that the effective damage could be reduced by a factor of fifty. The difficulty of a laboratory experiment properly simulating the effects in space are discussed. Potential advantages of continuous annealing such as reduction of stable defect formation and omission of radiation cover glasses are presented.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: Photovoltaic Specialists Conference; Jan 07, 1980 - Jan 10, 1980; San Diego, CA
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
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