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  • American Institute of Physics (AIP)  (28)
  • Genetics Society of America (GSA)  (1)
  • 2010-2014  (2)
  • 1995-1999  (21)
  • 1985-1989  (6)
  • 11
    Electronic Resource
    Electronic Resource
    Temperature, pressure, and perturber dependencies of line-mixing effects in CO2 infrared spectra. III. Second order rotational angular momentum relaxation and Coriolis effects in Π←Σ bands (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 110 (1999), S. 7733-7744 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The energy corrected sudden approach is used in order to deduce collisional parameters and to model infrared quantities in Π←Σ bands of CO2–He and CO2–Ar mixtures in the 200–300 K temperature range. Measured line-broadening coefficients and absorption in the Q-branch of the ν2 band at moderate pressure are first used for the determination (from a fit) of the time constant associated with the relaxation of the second order traceless tensor of the rotational angular momentum (all other collisional quantities have been determined previously). The results obtained are consistent with previous (calculated) temperature dependent values of the depolarized Rayleigh cross sections. The model is then successfully tested through computations of absorption in the ν2 and (ν1+ν2)I bands at elevated densities. Analysis of line-mixing effects is made, including study of the influence of interbranch transfers and of Coriolis coupling. Differences between the effects of collisions with He and Ar are pointed out and explained. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.478723
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  • 12
    Electronic Resource
    Electronic Resource
    Line-mixing effects in N2O Q branches: Model, laboratory, and atmospheric spectra (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 110 (1999), S. 1959-1968 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A model based on the energy corrected sudden approximation is used in order to account for line-mixing effects in N2O Q branches of Σ↔Π bands. The performance of this theoretical approach is demonstrated by comparisons with many (about 70) N2O–N2 and N2O–O2 laboratory spectra recorded in the 5 and 17 μm regions by three instrument setups; the Q branches of the 2ν20e–ν21f (near 579.3 cm−1), ν2 (near 588.8 cm−1), and ν2+ν3 (near 2798.3 cm−1) bands are investigated for different pressures (0.1–2.0 atm) and temperatures (200–300 K). The model is used to generate a set of line-mixing parameters for the calculation of the absorption by the ν2 Q branch under atmospheric conditions. These data are tested by comparisons between computed stratospheric emissions and values measured using a balloon-borne high resolution Fourier transform instrument. The results confirm the need to account for the effects of line mixing and demonstrate the capability of the model to represent the N2O absorption in a region which can be used for the retrieval of N2O5 mixing ratios. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.477862
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  • 13
    Electronic Resource
    Electronic Resource
    Simple modeling of line-mixing effects in IR bands. II. Nonlinear molecules applications to O3 and CHClF2 (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 2185-2191 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A simple semiempirical approach is developed in order to model the shape of infrared absorption bands. It is based on use of the strong collision model and of a classical representation of rotational levels. The absorption coefficient then has a simple analytical expression whose wavenumber and pressure dependencies are computed by using eleven parameters which depend on the considered vibrational transition, the temperature, and the nature of the perturber only. These quantities, which are band-averaged values of the detailed spectroscopic and collisional parameters of the molecular system, can be deduced from direct fits of measured spectra. The model thus requires no previous knowledge of the characteristics of the molecules and is thus applicable to complex systems; in particular it seems a promising approach for very dense molecular spectra for which only absorption cross sections are now available. Tests are presented in the case of O3 and CHClF2 bands perturbed by N2 at room temperature for which new measurements have been made. They demonstrate the accuracy of our semiempirical approach in predicting the spectral shape in a wide range of density provided that effective parameters are used. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.470974
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  • 14
    Electronic Resource
    Electronic Resource
    Line-mixing effects in He- and N2-broadened Σ↔Π infrared Q branches of N2O (1998)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 6684-6690 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Two Q branches of N2O near 579.3 and 2798 cm−1 belonging to the 2ν20e−ν21f and ν2+ν3 bands, respectively, of Σ←Π and Π←Σ symmetry, have been studied for He and N2 perturbers at pressures ranging from 0.1 to 2 atm, using a tunable diode laser and a difference-frequency laser spectrometer. To interpret the line-mixing effects in these spectra, we have applied a model based on the energy corrected sudden approximation whose parameters have been only derived from line-broadening data for N2O–He and also from the measured absorption by the Q branches for N2O–N2. This model provides a satisfactory agreement with experimental band shapes, whatever the band, the perturber and the pressure considered. Significantly larger line-mixing effects are shown for N2O–He with respect to N2O–N2. Finally, the assumption made in the calculations to treat separately the couplings in the even and odd j levels appears to have a negligible influence on the resulting band shapes. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.477318
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  • 15
    Electronic Resource
    Electronic Resource
    Atomic layer epitaxy of CdTe and MnTe (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3035-3041 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic deposition techniques are investigated for binary semiconductors of the telluride family, namely CdTe and MnTe. An original method for directly determining the CdTe atomic layer epitaxy (ALE) growth rate—in monolayers/cycle—is proposed, consisting in monitoring the reflection high-energy electron diffraction (RHEED) sublimation intensity oscillations of an ALE grown CdTe layer deposited on a MgTe buffer layer. The ALE CdTe autoregulated growth rate at 0.5 monolayer/cycle (in the substrate temperature domain between 260 and 290 °C) is accounted for on the basis of an atomic model which relies on the alternating c(2×2) Cd and (2×1) Te surface reconstructions during the ALE cycle. RHEED studies on MnTe atomic deposition, together with x-ray diffraction and transmission electron microscopy on ALE grown CdTe/MnTe superlattices reveal that all deposited Mn atoms are incorporated so that no autoregulated growth can be achieved. Furthermore, less than one or just one monolayer of Mn must be sent on the surface per ALE cycle to obtain well controlled superlattices with abrupt interfaces. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361243
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  • 16
    Electronic Resource
    Electronic Resource
    Thermal wave propagation in thin films on substrates (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5266-5269 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple dispersion equation for surface thermal waves propagating along a solid surface covered with a thin film of higher thermal conductivity is presented. It is shown to describe well phase measurements with a photothermal microscope carried out on metal films on glass substrates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359702
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  • 17
    Electronic Resource
    Electronic Resource
    Thermal wave imaging of electrically heated microstructures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2013-2018 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermoreflectance technique is applied for imaging electric current distributions and thermal transfer in a temperature reference resistor heated by an alternating current. High-frequency scans (30 kHz) allow imaging of the current density distribution in conducting strips of the resistor while scans of amplitude and phase of the surface temperature variation at lower frequencies reveal plane, cylindrical, and spherical thermal waves. We investigate wave dimensionality as a function of heating geometry and thermal length, and present a simple method allowing a quantitative thermal analysis by exploiting the phase profile of cylindrical thermal waves. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363094
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  • 18
    Electronic Resource
    Electronic Resource
    Thermal conductivity of thin metallic films measured by photothermal profile analysis (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 1510-1513 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Thermal conductivity of nickel and gold films on quartz (thickness 0.4–8 μm) was measured by a modulated thermoreflectance technique recording the surface temperature profile. Model calculations predict an optimum frequency for measuring thermal transport within the film. Measurements on films with various thicknesses reveal a thermal conductivity close to the bulk value for nickel while gold films exhibit a reduced conductivity with decreasing film thickness. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147638
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  • 19
    Electronic Resource
    Electronic Resource
    Strain-balanced Si/SiGe short period superlattices: Disruption of the surface crosshatch (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 845-849 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effects of inserting Si/Si0.6Ge0.4 strain-balanced superlattices (SLs) into Si0.8Ge0.2 (001) virtual substrates. The SiGe SL layer thickness chosen was larger than the critical thickness for elastic relaxation and generated numerous hemicylindrical features oriented along the 〈100〉 directions. These features lead, when covered by Si0.8Ge0.2, to a disruption of the well-ordered surface crosshatch along the 〈110〉 directions, and to a significant lowering of the surface roughness. There is also evidence for some filtering of the threading dislocations by the SL. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370813
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  • 20
    Electronic Resource
    Electronic Resource
    Large and small angle x-ray scattering studies of CdTe/MgTe superlattices (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1951-1957 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed large and small angle x-ray scattering measurements on CdTe/MgTe superlattices. The individual thicknesses of the CdTe and MgTe layers, together with the period dispersion and the crystallographic quality of the stacking, were extracted from large-angle x-ray diffraction. The Fresnel optical method and the distorted wave Born approximation were used to analyze the small angle x-ray scattering data. Specular reflectivity shows that the interface roughness is quite large for the two CdTe/MgTe superlattices grown either by conventional molecular beam epitaxy or by atomic layer epitaxy with however in the latter case a strong asymmetry between the direct and inverted interfaces. The effective MgTe concentration is determined from the refractive index. A model of correlated interface profiles is successfully used to simulate the diffuse scattering, and to gain access to the lateral correlation length of the roughness (Λ(parallel)=1500±750 Å for both samples); moreover, we demonstrate that the layers are almost completely correlated over the sample thickness in the growth direction. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370992
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