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  • 11
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 55-57 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that the intrinsic stress in cubic boron nitride films can be significantly relaxed during growth by simultaneous medium-energy ion implantation. The stress in the growing film has been studied in situ using cantilever curvature measurements and has been reduced to below 2 GPa by simultaneous Ar+ or N+ ion implantation with an energy of 70 and 35 keV, respectively. The resulting cubic boron nitride films show an increased long-term stability. The results reveal that the stress in cBN is not reduced due to segregation of boron at grain boundaries. © 2002 American Institute of Physics.
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  • 12
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2194-2196 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for the transport of nitrogen in austenitic stainless steel at temperatures around 400 °C is presented and discussed. The model considers the diffusion of nitrogen under the influence of trapping and detrapping at trap sites formed by local chromium. Nitrogen depth profiles simulated on the basis of the model with diffusion and detrapping activation energies of 1.1 and 1.45 eV, respectively, are in good agreement with experimental nitrogen profiles. © 2000 American Institute of Physics.
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  • 13
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1404-1406 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism of diffusional transport during low-energy ion nitriding of aluminum has been investigated using marker and isotope sequence techniques in connection with ion-beam analysis. For an ion energy of 1 keV and a temperature of 400 °C, it is shown that the nitride grows at the surface with aluminum being supplied by diffusion from the underlying bulk. © 2000 American Institute of Physics.
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  • 14
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1771-1773 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We compare reported compositions of a-C:H films in a ternary phase diagram. It is assumed that the films comprised three phases: sp3 hybridized carbon, sp2 hybridized carbon and hydrogen. The data are found to split into two well-separated groups. This separation depends on the method used to measure the sp3/sp2 ratio. We conclude from the comparison of NMR and infrared data that infrared analysis does not provide a quantitative measure of the sp3/sp2 ratio.
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  • 15
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2391-2393 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Model calculations are described which predict the fraction of tetrahedral (sp3) versus graphitic (sp2) bonding in ion beam or plasma-deposited amorphous carbon films on the basis of the preferential displacement of sp2 atoms. Displacement yields obtained from static trim simulations are used as input data for a simple analytical growing layer model of ion beam deposition. The sp3/sp2 ratio is found to increase with increasing carbon ion energy between 30 eV and 1 keV. Assuming equal probabilities for a free (implanted or displaced) atom to become trapped at either sp2 or sp3 sites results in sp3/sp2 ratios between 1 and 3.5. More refined dynamic simulations with tridyn confirm the trends with slightly lower sp3/sp2 ratios for ion beam or plasma deposition, also involving hydrogen. A decrease of the sp3/sp2 ratio towards high energies cannot be explained by preferential displacement only, in contrast to proposals in recent literature.
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  • 16
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 937-939 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An electron cyclotron resonance plasma was used to prepare C:H layers from methane. The temperature dependence of the deposition rate was investigated at substrate temperatures ranging from room temperature to 700 K, at a gas pressure of 1.6 Pa. Despite low ion energies corresponding to the plasma potential, transparent hard coatings were obtained at elevated temperature with a density up to 2 g cm−3. A deposition model is proposed which describes the growth from an adsorbed layer, including surface reactions with radicals and atomic hydrogen as well as the direct incorporation of ions. Two different deposition processes can be identified, yielding polymerlike films in the temperature range up to 450 K and dense hydrocarbons above this temperature. The observed temperature dependence of the film properties such as H/C ratio, index of refraction, and density is consistent with the predictions of the model.
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  • 17
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 56 (1993), S. 527-546 
    ISSN: 1432-0630
    Keywords: 52.25.Dg ; 79.20.Nc ; 82.65.Yh
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The elementary mechanisms are described which determine the plasma and surface processes during the plasma-enhanced chemical vapour deposition of hydrogenated carbon films from methane. Corresponding model calculations are reviewed and critically discussed in comparison to experimental results. A realistic modeling requires the simultaneous and self-consistent treatment of plasma and surface effects. Several experimental data sets on plasma parameters and the growth and the composition of the films have been reproduced successfully. However, a broader experimental data base is needed for more critical tests of the models. The reliability of the modeling, in particular of the surface effects, is still limited due to the poor availability of elementary data.
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  • 18
    ISSN: 1432-0630
    Keywords: PACS: 68.55.-a; 61.82.Bg
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. The amorphous non-equilibrium state of the system Fe/Al is studied in bulk and thin-film systems. For bulk samples prepared by ion-beam mixing of laser-deposited multilayers, a bcc solid solution is found for alloys with up to 70 at. % Al. Around 75 at. % Al a Fe2Al5-like crystalline phase is found. An amorphous state with Fe2Al5-like short-range order is found for 80 at. % Al. In thin films, for example the amorphous Al-rich transition layer of a laser-deposited Fe/Al multilayer, the amorphous state can exist for up to 30 at. % Fe due to the high interfacial energy. By ion-beam mixing at low temperatures (about 140 K) an oversaturation with 40 at. % Fe can be achieved.
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  • 19
    ISSN: 1432-0630
    Keywords: PACS: 68.55.-a; 61.82.Bg; 81.40.Rs
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Co/Cu multilayers were prepared by crossed-beam pulsed laser deposition and characterized by high-angle X-ray diffraction, as well as specular and non-specular reflection. Ion-beam mixing of the multilayers with 150 keV Cu+ ions and a fluence of up to 5×1015 cm-2 leads to the formation of a granular system of superparamagnetic Co clusters in Cu, as shown by magnetic measurements.
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  • 20
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 19 (2000), S. 485-487 
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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