ISSN:
1432-0630
Schlagwort(e):
61.80
;
68.55
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Maschinenbau
,
Physik
Notizen:
Abstract 30 keV boron ions are implanted at doses of 2×1014 and 2×1015 cm−2 in 〈100〉 silicon wafers kept at room or liquid-nitrogen temperatures. The samples are analyzed by double-crystal X-ray diffraction, transmission electron microscopy and secondary ion-mass spectrometry before and after furnace annealing at 800°C. The low-dose implant does not amorphize the substrate at any of the temperatures, and residual defects together with a remarkably enhanced boron diffusion are observed after annealing. The high-dose implant amorphizes the substrate only at low temperature. In this case, unlike the room-temperature implant, the absence of any residual defect, the incorporation of the dopant in substitutional position and a negligible profile braodening of boron are obtained after annealing. In principle, this process proves itself a promising step for the fabrication of p +/n shallow junctions with good electrical characteristics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/BF00324256
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