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11

Digitale Medien

Perpendicular magnetic anisotropy and magnetostriction of sputtered Co/Pd and Co/Pt multilayered films (1989)

Hashimoto, S. ; Ochiai, Y. ; Aso, K.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 66 (1989), S. 4909-4916

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Magnetic properties of Co/Pd and Co/Pt multilayers were studied as a function of sputtering gas pressure. It was found that the magnetic properties of the films depended upon the sputtering gas pressure, and large coercivity (several kOe) and a perfect squareness of the perpendicular hysteresis loop were attained by the deposition at the high gas pressure. These multilayers are suitable for perpendicular magnetic recording media. In the Co/Pd, the origin of the perpendicular magnetic anisotropy is mainly an interfacial anisotropy, although there exists a stress-induced anisotropy for the films with the relatively short periodicity. The perpendicular magnetic anisotropy of the Co/Pt can be concerned with the Co-Pt mixture formed at the interface of the multilayer structure. The magnetostriction of the Co/Pd films with the relatively short periodicity is extraordinarily large with a negative sign, since Co atoms adjacent to Pd atoms at the interface could induce larger magnetostriction than that of pure Co. As the periodicity increased, the magnetostriction became small, but the sign remained negative. For the films with the long periodicity the magnetostriction may be caused by pure Co of the layer interior. On the contrary, the Co/Pt films have a positive magnetostriction even for the thick Co layers. The data indicate existence of the Co-Pt mixture at the interface.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.343760

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12

Digitale Medien

Magnetic and other properties and sputtering behavior of Co-base amorphous alloy films (1987)

Hayashi, K. ; Hayakawa, M. ; Ochiai, Y. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 61 (1987), S. 2983-2992

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Magnetic and other properties of Co-base amorphous alloy films prepared by sputtering are investigated. A detailed magnetic phase diagram with saturation magnetic flux density, crystallization temperature, and zero-magnetostrictive line on Co-Ta-Zr amorphous alloys were obtained, and the technical knowhow to make a film with well-reproducible characteristics by widely changing the sputtering conditions was related with these physical properties. Especially on alloy sputtering, a phenomenological model for elucidating a composition difference between film and target is presented. After these studies, the film characteristics of Bs=12 kG, Tx=450 °C, ||λs||〈10−8, Hc〈10 mOe, and permeabilities of μ(1 MHz)=7000, μ(100 MHz)=2000 for the single film of 2 μm in thickness and of μ(1 MHz)=4000, μ(100 MHz)=800 for the insulator-sandwiched multilayered film of 10 μm are obtained, and these well-balanced values enable us to apply the materials for high-frequency recording head.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.337848

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13

Digitale Medien

Nanometer-scale resolution of a chloromethylated calixarene negative resist in electron-beam lithography: Dependence on the number of phenolic residues (2000)

Sakamoto, T. ; Manako, S. ; Fujita, J. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 77 (2000), S. 301-303

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We have investigated a chloromethylated calixarene, p-chloromethylmethoxcalix[n]arene (CMC[n]AOMe) (n=5,6,7), as a negative resist in electron-beam lithography. Each CMC[n]AOMe resist has a resolution of about 12 nm and a sensitivity of about 0.8 mC/cm2 which varies slightly with n (or molecular weight). A sub-10-nm Si wire has been fabricated by halide plasma etching and a CMC[n]AOMe resist as an etching mask. Because the resist pattern edge is smooth, Si wires with 7-nm width and 10-μm length were performed without any breaking. © 2000 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.126957

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14

Digitale Medien

Influence of interdot coupling on electron-wave interference in an open quantum-dot molecule (2002)

Aoki, N. ; Oonishi, D. ; Iwase, Y. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 80 (2002), S. 2970-2972

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We study the characteristics of the fluctuations, observed in the low-temperature magnetoconductance of an open quantum-dot molecule formed from a pair of split-gate quantum dots. The evolution of these fluctuations suggests a decrease in the typical area for coherent interference with decreasing dot-coupling strength. We discuss this behavior in terms of a transition from multi- to single-dot interference as a function of the interdot coupling. © 2002 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1472471

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15

Digitale Medien

Ultrahigh resolution of calixarene negative resist in electron beam lithography (1996)

Fujita, J. ; Ohnishi, Y. ; Ochiai, Y. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 68 (1996), S. 1297-1299

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: A nonpolymer material, calixarene derivative (hexaacetate p-methnylcalix[6]arene) was tested as a high-resolution negative resist under an electron beam lithography process. It showed under 10-mm resolution with little side roughness and high durability to halide plasma etching. A sub-10-nm Ge quantum wire was perfectly etched off without defects. Such a performance is suitable for nanoscale device processes. © 1996 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.115958

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16

Digitale Medien

Sub-10 nm lithography and development properties of inorganic resist by scanning electron beam (1995)

Fujita, J. ; Watanabe, H. ; Ochiai, Y. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 66 (1995), S. 3064-3066

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We report the self-developing properties of an AlF3-doped LiF inorganic resist under irradiation by a scanning electron beam with an energy of 20–50 keV are reported. The self-development properties strongly depended on both AlF3 concentration and film thickness. To explain this behavior, we presented an exposure model that takes into account a balance between a carbon contamination and a diffusion process. By optimizing resist qualities, we were able to delineate 5 nm linewidth patterns with 60 nm periodicity using a 30 kV electron beam. © 1995 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.114279

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