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  • Artikel  (109)
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  • Artikel  (109)
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  • 1
    Digitale Medien
    Digitale Medien
    On the artificial creation of the EL2 center by means of boron implantation in gallium arsenide (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4202-4210 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In the present work, an analysis of the dark and optical capacitance transients obtained from Schottky Au:GaAs barriers implanted with boron has been carried out by means of the isothermal transient spectroscopy (ITS) and differential and optical ITS techniques. Unlike deep level transient spectroscopy, the use of these techniques allows one to easily distinguish contributions to the transients different from those of the usual deep trap emission kinetics. The results obtained show the artificial creation of the EL2, EL6, and EL5 defects by the boron implantation process. Moreover, the interaction mechanism between the EL2 and other defects, which gives rise to the U band, has been analyzed. The existence of a reorganization process of the defects involved has been observed, which prevents the interaction as the temperature increases. The activation energy of this process has been found to be dependent on the temperature of the annealing treatment after implantation, with values of 0.51 and 0.26 eV for the as-implanted and 400 °C annealed samples, respectively. The analysis of the optical data has corroborated the existence of such interactions involving all the observed defects that affect their optical parameters.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.349145
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  • 2
    Digitale Medien
    Digitale Medien
    Anomalous optical and electrical recovery processes of the photoquenched EL2 defect produced by oxygen and boron ion implantation in gallium arsenide (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 252-259 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The optical and electrical recovery processes of the metastable state of the EL2 defect artificially created in n-type GaAs by boron or oxygen implantation are analyzed at 80 K using optical isothermal transient spectroscopy. In both cases, we have found an inhibition of the electrical recovery and the existence of an optical recovery in the range 1.1–1.4 eV, competing with the photoquenching effect. The similar results obtained with both elements and the different behavior observed in comparison with the native EL2 defect has been related to the network damage produced by the implantation process. From the different behavior with the technological process, it can be deduced that the electrical and optical anomalies have a different origin. The electrical inhibition is due to the existence of an interaction between the EL2 defect and other implantation-created defects. However, the optical recovery seems to be related to a change in the microscopic metastable state configuration involving the presence of vacancies.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.350751
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  • 3
    Digitale Medien
    Digitale Medien
    Analysis of geometrical effects on the behavior of transverse and longitudinal modes of amorphous silicon compounds (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1933-1942 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The peak frequency, width, and shape of the transverse-optical (TO) and longitudinal-optical (LO) infrared absorption modes of silicon oxides (SiO2, SiOx), silicon nitrides (Si3N4, SiNx), silicon oxynitrides (SiOxNy), and other silicon compounds have often been connected with stress, stoichiometry, defects, structural order, and other properties of the layers. However, certain geometrical effects strongly influence the spectral response of the material independent of its physical or structural properties. The influence of layer thickness, multilayer configuration, substrate effects, angles, and polarization on the behavior of TO and LO bands are presented and discussed. Some corrections are suggested to reduce experimental error and for the reliable measurement of stress, composition, disorder, and structure. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.364049
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  • 4
    Digitale Medien
    Digitale Medien
    Emission kinetic of the slow interface states in Si3N4/In0.53Ga0.47As structures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 919-921 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this work we have studied the emission kinetics related to the slow interface states of metal Si3N4/In0.53Ga0.47As structures, by means of the analysis of isothermal transients measurements performed at constant capacitance. The transients show the presence of two kinds of slow interface states. One of them presents a kinetics which can be explained by means of a direct exchange of carriers with the semiconductor conduction-band states. The other one shows a more complex emission kinetics. In this last case, the slow states emission is controlled by the occupancy factor of the fast interface states, and this suggests the existence of a connection mechanism between them.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104477
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  • 5
    Digitale Medien
    Digitale Medien
    Optical characterization of silicon-on-insulator material obtained by sequential implantation and annealing (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2443-2445 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The optical characterization of silicon-on-insulator structures formed by sequential implantation and annealing (SIA) has been carried out. The infrared transmission spectra show peaks characteristic of a thermal oxide, and confirm the high quality of the buried oxide. Moreover, the spectra obtained from these SIA samples, in comparison to those obtained from equivalent samples made with a single implant, show a shift of the main absorption peak to higher wave numbers, which can be attributed to excess oxygen. The higher concentration of oxygen in the SIA samples is corroborated by photoluminescence measurements which show the presence of dislocation-related bands broadened by the presence of oxygen.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104178
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  • 6
    Digitale Medien
    Digitale Medien
    Reconstruction of the SiO2 structure damaged by low-energy Ar-implanted ions (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 126-134 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The damage created in SiO2 layers by low-energy Ar ions (130 keV) and the reconstruction of the structure after various annealing steps have been characterized as a function of the implantation dose. Quantitative determinations of the damage produced have been performed from infrared spectroscopy. We show that two dose thresholds for damage are encountered: At 1014 cm−2 damage saturates and for doses above 1017 cm−2 sputtering effects dominate. Annealing at high temperatures (1100 °C) restores the structure of the initial nonimplanted oxide only for doses below the second threshold, although some disorder remains. Electroluminescence measurements show that annealing is able to eliminate electrically active defects. For implantation doses greater than 1017 cm−2, annealing is unable to restore the structure completely as sputtering effects create a depleted oxygen layer at the surface and substoichiometric defects appear. The presence of microcavities created by the Ar atoms at such high doses may affect the annealing behavior. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363998
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  • 7
    Digitale Medien
    Digitale Medien
    Majority-carrier capture cross-section determination in the large deep-trap concentration cases (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1562-1569 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A method to determine the thermal cross section of a deep level from capacitance measurements is reported. The results enable us to explain the nonexponential behavior of the capacitance versus capture time when the trap concentration is not negligible with respect to that of the shallow one, and the Debye tail effects are taken into account. A figure of merit for the nonexponential behavior of the capture process is shown and discussed for different situations of doping and applied bias. We have also considered the influence of the position of the trap level's energy on the nonexponentiality of the capture transient. The experimental results are given for the gold acceptor level in silicon and for the DX center in Al0.55 Ga0.45As, which are in good agreement with the developed theory.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.336465
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  • 8
    Digitale Medien
    Digitale Medien
    Analysis of the near-intrinsic and extrinsic photocapacitance due to the EL2 level in boron-implanted GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1661-1669 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A detailed analysis of the photocapacitance signal at the near-band and extrinsic energetic ranges in Schottky barriers obtained on horizontal Bridgman GaAs wafers, which were implanted with boron at different doses and annealed at several temperatures, has been carried out by using the optical isothermal transient spectroscopy, OITS. The optical cross sections have been determined as well as the quenching efficiency of the EL2 level which has been found to be independent of the annealing temperature. Moreover, the quenching relaxation presents two significant features: (i) a strong increase of the quenching efficiency from 1.35 eV on and (ii) a diminution of the quenching transient amplitude in relation with that shown by the fundamental EL2 level. In order to explain this behavior, different cases are discussed assuming the presence of several energy levels, the existence of an optical recuperation, or the association of the EL2 trap with two levels located, respectively, at Ev+0.45 eV and Ec−0.75 eV. The theoretical simulation, taking into account these two last cases, is in agreement with the experimental photocapacitance data at low temperature, as well as at room temperature where the EL2 filling phototransient shows an anomalous behavior. Moreover, unlike the previous data reported for the EL2 electron optical cross section, the values found using our experimental technique are in agreement with the behavior deduced from the theoretical calculation. The utilization of the OITS method has also allowed the determination of another level, whose faster optical contribution is often added to that of the EL2 level when the DLOS or standard photocapacitance is used.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.337255
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  • 9
    Digitale Medien
    Digitale Medien
    Fabrication and characterization of a twin-mass accelerometer
    Amsterdam : Elsevier
    Sensors and Actuators A: Physical 43 (1994), S. 115-119 
    Details
    ISSN: 0924-4247
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik
    Materialart: Digitale Medien
    URL: http://linkinghub.elsevier.com/retrieve/pii/0924-4247(93)00677-V
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  • 10
    Digitale Medien
    Digitale Medien
    Analysis of electrostatic-damped piezoresistive silicon accelerometers
    Amsterdam : Elsevier
    Sensors and Actuators A: Physical 37-38 (1993), S. 317-322 
    Details
    ISSN: 0924-4247
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik
    Materialart: Digitale Medien
    URL: http://linkinghub.elsevier.com/retrieve/pii/0924-4247(93)80053-J
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