ISSN:
1359-0197
Schlagwort(e):
Semiconductor diode
;
capture cross-section
;
defect annealing
;
defect levels
;
electron irradiation
;
electron-induced defects
;
forward voltage drop
;
recovered charge
;
recovery time
Quelle:
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
Thema:
Chemie und Pharmazie
,
Energietechnik
,
Physik
Materialart:
Digitale Medien
URL:
http://linkinghub.elsevier.com/retrieve/pii/1359-0197(88)90262-7
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