ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Extrinsic gettering of titanium in float-zone silicon was investigated. After heat treatments under various atmospheres the titanium concentration was determined in the bulk by deep level transient spectroscopy and in the surface region by secondary ion mass spectroscopy. The gettering is limited by the slow diffusion coefficient and by the ability of the surface to act as a sink. We show that an oxide layer, a phosphorous glass layer, and a surface damage zone are efficient sinks. A free surface, however, shows a very limited gettering action for titanium.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.339292
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