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Molecular beam epitaxial growth of Fe/Cr multilayers on (001)GaAs (1988)

Etienne, P. ; Creuzet, G. ; Friederich, A. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 53 (1988), S. 162-164

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Molecular beam epitaxy has been used to grow single-crystal Fe/Cr magnetic multilayer structures on homoepitaxial (001)GaAs layers. The epitaxial relationships between Fe, Cr, and GaAs were determined by in situ reflection high-energy electron diffraction. The sharpness of the different interfaces of the Fe/Cr multilayers is illustrated by Auger electron spectroscopy sputter depth profiling, which shows that no significant intermixing occurs in the investigated growth temperature range −50 to +50 °C.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.100353

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Digitale Medien

A comparative study of the molecular-beam epitaxial growth of Ag/Fe, Ag/Cr, and Fe/Cr superlattices on GaAs (001) (1990)

Etienne, P. ; Lequien, S. ; Nguyen-Van-Dau, F. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 67 (1990), S. 5400-5402

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Ag/Fe, Ag/Cr, and Fe/Cr superlattices grown on GaAs (001) by molecular-beam epitaxy are compared on the basis of their structural properties. Highly ordered superlattices with very sharp interfaces are obtained for Ag-based structures (Ag/Fe, Ag/Cr). Although several attempts have been made to improve the growth process of Fe/Cr superlattices, they are far from being so well defined. This is a consequence of a progressive degradation which occurs when the superlattice thickness increases and becomes clearly observable in reflection high-energy electron diffraction above roughly 300 A(ring). However, using an optimum growth temperature, reasonably well-defined structures, suitable for subsequent magnetic studies, are obtained.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.344566

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Charge transport in silicon carbide: Atomic and microscopic effects (1996)

Schroeder, A. ; Pelster, R. ; Grunow, V. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 80 (1996), S. 2260-2268

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: It is shown that charge transport in SiC ceramics includes atomic mechanisms as well as phenomena which depend on the microstructure of the material. Both aspects are revealed by the analysis of temperature-dependent dc and ac measurements. The complex dielectric function (DF) of boron-doped SiC ceramics with various additives has been measured at frequencies from 5 Hz to 2 GHz and at temperatures between 100 and 330 K. In addition, the dc conductivity was measured between 40 and 220 K. A transport mechanism on an atomic scale determines the temperature dependence of the dc conductivity. At low temperatures 3D variable range hopping between boron impurity states or point defects takes place whereas at higher temperatures Arrhenius-like carrier activation becomes dominant. The ac behavior depends on the dc conductivity, but it reflects phenomena on a larger microscopic scale as well. The real part of the DF has huge values of up to 104. Two polarization processes have been identified. The low-frequency process is related to a conduction current relaxation, i.e. to a partial interfacial polarization in conducting paths. The Barton-Nakajima-Namika relation holds, relating dc conductivity, relaxation time, and relaxator strength. On the other hand, the high-frequency process is attributed to Maxwell-Wagner-Sillars interfacial polarization in crystalline SiC grains with a size of several μm. © 1996 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.363054

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