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Thermal stability of the midgap acceptor rhodium in indium phosphide (1995)

Näser, A. ; Dadgar, A. ; Kuttler, M. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 67 (1995), S. 479-481

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We investigated the thermally induced redistribution of Rh in low pressure MOCVD grown InP structures by means of secondary-ion-mass-spectroscopy. Analogous measurements for InP:Fe structures serve as reference. On alternately Rh-doped/undoped InP structures an upper limit for the diffusion coefficient of DRh(800 °C)≤1×10−14 cm2/s is established much smaller than DFe(750 °C)=1×10−11 cm2/s. No exchange reactions are observed at the interface of p-InP/InP:Rh structures. Only Rh implanted into InP shows defect induced redistribution into amorphous areas. Rh is superior to Fe as far as thermal stability is concerned. © 1995 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.114542

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