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  • 1
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    Unbekannt
    American Association for the Advancement of Science (AAAS)
    Publikationsdatum: 2019
    Beschreibung: 〈p〉The nature of superconductivity in SrTiO〈sub〉3〈/sub〉, the first oxide superconductor to be discovered, remains a subject of intense debate several decades after its discovery. SrTiO〈sub〉3〈/sub〉 is also an incipient ferroelectric, and several recent theoretical studies have suggested that the two properties may be linked. To investigate whether such a connection exists, we grew strained, epitaxial SrTiO〈sub〉3〈/sub〉 films, which are known to undergo a ferroelectric transition. We show that, for a range of carrier densities, the superconducting transition temperature is enhanced by up to a factor of two compared to unstrained films grown under the same conditions. Moreover, for these films, superconductivity emerges from a resistive state. We discuss the localization behavior in the context of proximity to ferroelectricity. The results point to new opportunities to enhance superconducting transition temperatures in oxide materials.〈/p〉
    Digitale ISSN: 2375-2548
    Thema: Allgemeine Naturwissenschaft
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
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    Unbekannt
    American Association for the Advancement of Science (AAAS)
    Publikationsdatum: 1995-12-01
    Beschreibung: 〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Stemmer, W P -- New York, N.Y. -- Science. 1995 Dec 1;270(5241):1510.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/7491501" target="_blank"〉PubMed〈/a〉
    Schlagwort(e): Algorithms ; Base Sequence ; *Dna ; *Evolution, Molecular ; Gene Library ; Genome, Human ; Humans ; *Mathematical Computing ; Mutation ; Selection, Genetic
    Print ISSN: 0036-8075
    Digitale ISSN: 1095-9203
    Thema: Biologie , Chemie und Pharmazie , Informatik , Medizin , Allgemeine Naturwissenschaft , Physik
    Standort Signatur Erwartet Verfügbarkeit
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  • 3
    Publikationsdatum: 2015-09-19
    Beschreibung: The enhancement of the functional properties of materials at reduced dimensions is crucial for continuous advancements in nanoelectronic applications. Here, we report that the scale reduction leads to the emergence of an important functional property, ferroelectricity, challenging the long-standing notion that ferroelectricity is inevitably suppressed at the scale of a few nanometers. A combination of theoretical calculations, electrical measurements, and structural analyses provides evidence of room-temperature ferroelectricity in strain-free epitaxial nanometer-thick films of otherwise nonferroelectric strontium titanate (SrTiO3). We show that electrically induced alignment of naturally existing polar nanoregions is responsible for the appearance of a stable net ferroelectric polarization in these films. This finding can be useful for the development of low-dimensional material systems with enhanced functional properties relevant to emerging nanoelectronic devices.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Lee, D -- Lu, H -- Gu, Y -- Choi, S-Y -- Li, S-D -- Ryu, S -- Paudel, T R -- Song, K -- Mikheev, E -- Lee, S -- Stemmer, S -- Tenne, D A -- Oh, S H -- Tsymbal, E Y -- Wu, X -- Chen, L-Q -- Gruverman, A -- Eom, C B -- New York, N.Y. -- Science. 2015 Sep 18;349(6254):1314-7. doi: 10.1126/science.aaa6442.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA. ; Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE 68588, USA. ; Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 USA. ; Department of Materials Modeling and Characterization, Korea Institute of Materials Science, Changwon 642-831, Korea. ; Department of Physics, Temple University, Philadelphia, PA 19122, USA. ; Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea. ; Materials Department, University of California-Santa Barbara, Santa Barbara, CA 93106-5050, USA. ; Department of Physics, Boise State University, Boise, ID 83725-1570, USA. ; Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE 68588, USA. agruverman2@unl.edu eom@engr.wisc.edu. ; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA. agruverman2@unl.edu eom@engr.wisc.edu.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/26383947" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Digitale ISSN: 1095-9203
    Thema: Biologie , Chemie und Pharmazie , Informatik , Medizin , Allgemeine Naturwissenschaft , Physik
    Standort Signatur Erwartet Verfügbarkeit
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  • 4
    Publikationsdatum: 2015-11-08
    Beschreibung: Resistances that exceed the Mott-Ioffe-Regel limit (known as bad metal behavior) and non-Fermi liquid behavior are ubiquitous features of the normal state of many strongly correlated materials. We establish the conditions that lead to bad metal and non-Fermi liquid phases in NdNiO 3 , which exhibits a prototype bandwidth-controlled metal-insulator transition. We show that resistance saturation is determined by the magnitude of Ni e g orbital splitting, which can be tuned by strain in epitaxial films, causing the appearance of bad metal behavior under certain conditions. The results shed light on the nature of a crossover to a non-Fermi liquid metal phase and provide a predictive criterion for Anderson localization. They elucidate a seemingly complex phase behavior as a function of film strain and confinement and provide guidelines for orbital engineering and novel devices.
    Digitale ISSN: 2375-2548
    Thema: Allgemeine Naturwissenschaft
    Standort Signatur Erwartet Verfügbarkeit
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