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  • 1
    ISSN: 1047-8477
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Biologie
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2473-2475 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Fabrication and characterization of nitrogenated tetrahedral amorphous carbon (ta-C:N) semiconductor/crystalline p-type silicon (p-Si) heterojunction structures are reported. The electron-hole pairs generated from both ta-C:N and Si depletion regions were observed from photoresponse measurements. The peaks are centered at about 540 and 1020 nm, which correspond to the optical absorption edge of ta-C:N and p-Si, respectively. The reverse current increased by three orders of magnitude when the structures were exposed to AM1 light. A photovoltaic effect was observed from ta-C:N and the values of short circuit current, open circuit voltage, and field factor obtained are 5.05 mA cm−2, 270 mV, and 0.2631, respectively. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    Oxford, UK : Blackwell Publishing Ltd
    Geophysical journal international 124 (1996), S. 0 
    ISSN: 1365-246X
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Geologie und Paläontologie
    Notizen: This paper studies the effect on the overall properties of a cracked solid of the existence of connections between otherwise isolated cracks and of small-scale porosity within the ‘solid’ material. The intention is to provide effective medium models for the calculation of elastic wave propagation with wavelengths greater than the dimensions of the cracks. The method follows that of earlier papers in which the overall elastic properties are directly related to parameters governing the microstructure, such as crack number density and the mean radius and spacing distance of the cracks. Expressions derived by the method of smoothing are evaluated to second order in the number density of cracks, thereby incorporating crack–crack interactions through both the strain field in the solid and the flow field of fluids in the pores.Flow of interstitial liquids tends to weaken the material; the limit of zero flow is equivalent to isolating the cracks and the limit of free flow is equivalent to dry (gas-filled) cracks. It also introduces additional attenuation. The inclusion of small-scale porosity gives a model of ‘equant porosity’ which is more closely constrained by the details of crack dynamics than earlier models.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    Oxford, UK : Blackwell Science Ltd
    Geophysical prospecting 49 (2001), S. 0 
    ISSN: 1365-2478
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Geologie und Paläontologie , Physik
    Notizen: There is general agreement between different theories giving expressions for the overall properties of materials with dry, aligned cracks if the number density of cracks is small. There is also very fair agreement for fluid-filled isolated cracks. However, there are considerable differences between two separate theories for fluid-filled cracks with equant porosity. Comparison with recently published experimental data on synthetic sandstones gives a good fit with theory for dry samples. However, although the crack number density in the laboratory sample is such that first-order theory is unlikely to apply, expressions correct to second order (in the number density) provide a worse fit. It also appears that the ratio of wavelength to crack size is not sufficiently great for any detailed comparison with effective-medium theories, which are valid only when this ratio is large. The data show dispersion effects for dry cracks and scattering, neither of which will occur at sufficiently long wavelengths. Data from the water-saturated samples indicate that the effect of equant porosity is significant, although the two theories differ strongly as to just how significant. Once again, and in spite of the reservations mentioned above, a reasonable fit between theory and observation can be shown.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6078-6083 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The structure of tetrahedral amorphous carbon (ta-C) films deposited by a filtered cathodic vacuum arc has been studied using micro-Raman spectroscopy in terms of substrate bias, nitrogen gas partial pressure (ta-C:N films) or aluminum content in a mixed aluminum/carbon target (ta-C:Al films) during deposition. The first-order Raman spectra generally show a broad feature overlaid by a disordered (D) peak and a graphitic (G) peak. The contribution of sp3 bonding to the Raman spectrum is not explicit, since the Raman phonon line is more sensitive to the sp2 carbon bonding due to its larger Raman scattering cross section. However by comparing the ratios of the intensities, the full widths at half maximum (FWHM), and the peak areas between the D and G peaks, the sp3 contribution may indirectly be reflected by the complex Raman features. The G peak position for the ta-C and ta-C:N films appears to not change significantly with the change of substrate bias voltage or N2 partial pressure, whereas the shift of the D peak is more appreciable. On the contrary, the G peak position for the ta-C:Al films shows a continuous decrease with increasing Al content. For the undoped ta-C films, the minimum intensity, area, and FWHM ratios between the D peak and the G peak are obtained at a bias around −100 V, which corresponds to the maximum sp3 content in the ta-C films. These ratios for the ta-C:N and ta-C:Al films, however, generally increase with increased N or Al content, which indicates the increase of sp2 bonded clusters. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6816-6821 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The electron field emission of tetrahedral amorphous carbon (ta-C) films deposited by filtered cathodic vacuum arc is reported. The ta-C films were found to have a threshold field ranging from 18 to 28 V μm−1, depending on the sp3 content. The nitrogenated ta-C (ta-C:N) films show a lower threshold field of 12 V μm−1 as compared to the ta-C films. The threshold field appears to be dependent on the film thickness. There is a minimum threshold field with the film thickness of around 30 nm for the ta-C:N film. Although the ta-C and ta-C:N films have relatively low threshold fields, the density of emission sites is not high for these films. The density of emission sites can be increased when the film surface is treated with H+, O+, or Ar+ ions after deposition. Moreover, the posttreated films show even lower threshold fields compared to the untreated films. The improvement in the emission after the ion beam treatment appears to be independent of the ions used. The surface before and after ion bombardment was analyzed using atomic force microscopy and scanning tunneling microscopy. This analysis shows the evident surface modification and more segregated cluster regions induced by the ion beam treatment. The posttreated films are analyzed using ultraviolet photospectroscopy. The photoelectrons start to emit at energies as low as about 0.6 eV. A mechanism for the electron field emission is proposed. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4859-4865 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The behavior of different materials under macrotribological and nanotribological conditions has been compared. The materials, hydrogenated amorphous diamondlike carbon, highly ordered pyrolitic graphite, and mica, were submitted to a fretting test (macrotribological behavior) and a combined atomic force microscopy/lateral force microscopy (AFM/LFM) (nanotribological behavior). The coefficient of friction in the macroscopic regime under fixed experimental conditions considerably changed with the test duration, whereas the friction coefficient measured from the nanoscopic regime was relatively constant during the test. In the macroscopic regime, evident wear, elastoplastic deformation, and material transfer were noticed, while in the nanoscopic regime under the used testing conditions no wear phenomena were observed. The coefficient of friction showed some dependence on the amplitude and frequency of lateral movement of the sample relative to the counterbody in both the fretting and AFM/LFM tests as well as on the normal load in the fretting test. This work leads to the conclusion that although some similitudes could be found, the macrotribological behavior of materials cannot simply be related to their nanotribological behavior due to the different wear and friction processes. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 8
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2448-2449 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Mach–Zehnder (MZ) waveguide interferometers integrated on SOI (silicon on insulator) for 1.3 μm operation are studied on the basis of the large cross-section single-mode rib waveguide condition and the free-carrier plasma dispersion effect in Si wafer direct bonding SOI by back-polishing. And the MZ interferometers are fabricated by using KOH anisotropic etching. Their insertion losses and modulation depths are measured to be 4.81 dB and 98%, respectively, at the wavelength of 1.3 μm when a forward bias voltage applied to a p+n junction is 0.95 V and the active zone length of the MZ interferometers is 816.0 μm. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 9
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 985-987 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Low-temperature (490 °C)GaAs epitaxial growth on (100) silicon by molecular beam epitaxy is reported in this letter. Silicon wafers were cleaned by spin-etch technique to passivate silicon surface with hydrogen, by which the conventional high-temperature ((approximately-greater-than)850 °C) oxide desorption step for pre-epitaxial substrate preparation is eliminated. The possibility of epitaxial growth on such a passivated surface to obtain good quality epitaxy is investigated. Epitaxial films are characterized by cross-sectional transmission electron microscopy (XTEM), plan-view transmission electron microscopy, and double crystal diffraction (DCD).
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 10
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1735-1735 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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