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  • 1
    Publikationsdatum: 2016-06-22
    Beschreibung: Contrasts between the Cambrian Explosion (CE) and the Great Ordovician Biodiversification Event (GOBE) have long been recognized. Whereas the vast majority of body plans were established as a result of the CE, taxonomic increases during the GOBE were manifested at lower taxonomic levels. Assessing changes of ichnodiversity and ichnodisparity as...
    Print ISSN: 0027-8424
    Digitale ISSN: 1091-6490
    Thema: Biologie , Medizin , Allgemeine Naturwissenschaft
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Publikationsdatum: 2009-07-17
    Beschreibung: Schistosoma mansoni is responsible for the neglected tropical disease schistosomiasis that affects 210 million people in 76 countries. Here we present analysis of the 363 megabase nuclear genome of the blood fluke. It encodes at least 11,809 genes, with an unusual intron size distribution, and new families of micro-exon genes that undergo frequent alternative splicing. As the first sequenced flatworm, and a representative of the Lophotrochozoa, it offers insights into early events in the evolution of the animals, including the development of a body pattern with bilateral symmetry, and the development of tissues into organs. Our analysis has been informed by the need to find new drug targets. The deficits in lipid metabolism that make schistosomes dependent on the host are revealed, and the identification of membrane receptors, ion channels and more than 300 proteases provide new insights into the biology of the life cycle and new targets. Bioinformatics approaches have identified metabolic chokepoints, and a chemogenomic screen has pinpointed schistosome proteins for which existing drugs may be active. The information generated provides an invaluable resource for the research community to develop much needed new control tools for the treatment and eradication of this important and neglected disease.〈br /〉〈br /〉〈a href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2756445/" target="_blank"〉〈img src="https://static.pubmed.gov/portal/portal3rc.fcgi/4089621/img/3977009" border="0"〉〈/a〉   〈a href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC2756445/" target="_blank"〉This paper as free author manuscript - peer-reviewed and accepted for publication〈/a〉〈br /〉〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Berriman, Matthew -- Haas, Brian J -- LoVerde, Philip T -- Wilson, R Alan -- Dillon, Gary P -- Cerqueira, Gustavo C -- Mashiyama, Susan T -- Al-Lazikani, Bissan -- Andrade, Luiza F -- Ashton, Peter D -- Aslett, Martin A -- Bartholomeu, Daniella C -- Blandin, Gaelle -- Caffrey, Conor R -- Coghlan, Avril -- Coulson, Richard -- Day, Tim A -- Delcher, Art -- DeMarco, Ricardo -- Djikeng, Appolinaire -- Eyre, Tina -- Gamble, John A -- Ghedin, Elodie -- Gu, Yong -- Hertz-Fowler, Christiane -- Hirai, Hirohisha -- Hirai, Yuriko -- Houston, Robin -- Ivens, Alasdair -- Johnston, David A -- Lacerda, Daniela -- Macedo, Camila D -- McVeigh, Paul -- Ning, Zemin -- Oliveira, Guilherme -- Overington, John P -- Parkhill, Julian -- Pertea, Mihaela -- Pierce, Raymond J -- Protasio, Anna V -- Quail, Michael A -- Rajandream, Marie-Adele -- Rogers, Jane -- Sajid, Mohammed -- Salzberg, Steven L -- Stanke, Mario -- Tivey, Adrian R -- White, Owen -- Williams, David L -- Wortman, Jennifer -- Wu, Wenjie -- Zamanian, Mostafa -- Zerlotini, Adhemar -- Fraser-Liggett, Claire M -- Barrell, Barclay G -- El-Sayed, Najib M -- 086151/Wellcome Trust/United Kingdom -- 5D43TW006580/TW/FIC NIH HHS/ -- 5D43TW007012-03/TW/FIC NIH HHS/ -- AI054711-01A2/AI/NIAID NIH HHS/ -- AI48828/AI/NIAID NIH HHS/ -- R01 GM083873/GM/NIGMS NIH HHS/ -- R01 GM083873-07/GM/NIGMS NIH HHS/ -- R01 GM083873-08/GM/NIGMS NIH HHS/ -- R01 LM006845/LM/NLM NIH HHS/ -- R01 LM006845-08/LM/NLM NIH HHS/ -- R01 LM006845-09/LM/NLM NIH HHS/ -- U01 AI048828/AI/NIAID NIH HHS/ -- U01 AI048828-01/AI/NIAID NIH HHS/ -- U01 AI048828-02/AI/NIAID NIH HHS/ -- WT085775/Z/08/Z/Wellcome Trust/United Kingdom -- England -- Nature. 2009 Jul 16;460(7253):352-8. doi: 10.1038/nature08160.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Wellcome Trust Sanger Institute, Cambridge CB10 1SD, UK. mb4@sanger.ac.uk〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/19606141" target="_blank"〉PubMed〈/a〉
    Schlagwort(e): Animals ; Biological Evolution ; Exons/genetics ; Genes, Helminth/genetics ; Genome, Helminth/*genetics ; Host-Parasite Interactions/genetics ; Introns/genetics ; Molecular Sequence Data ; Physical Chromosome Mapping ; Schistosoma mansoni/drug effects/embryology/*genetics/physiology ; Schistosomiasis mansoni/drug therapy/parasitology
    Print ISSN: 0028-0836
    Digitale ISSN: 1476-4687
    Thema: Biologie , Chemie und Pharmazie , Medizin , Allgemeine Naturwissenschaft , Physik
    Standort Signatur Erwartet Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3131-3136 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report a calculation on the current-voltage characteristics of double-barrier resonant tunneling diodes. The results can well-explain experimental observations, in particular, the temperature dependence of both the absolute current amplitude and the resonant voltage positions. Our calculation takes into account the self-consistent Poisson equation, quantum mechanical tunneling, and band-gap offset at the heterojunctions. In addition, the calculation includes a realistic scattering-induced broadening effect, with which a quantitative fit throughout the entire negative differential resistance (NDR) region is demonstrated. Finally, we show that the differential resistance in the NDR region can be tuned, when asymmetrical tunneling barriers are used.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1537-1539 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We present quantum mechanical self-consistent calculations on the transfer characteristics of a new resonant tunneling transistor. The model structure consists of a source, a tunneling barrier, a quantum-well drain, a thick insulator, and a backgate. The tunneling barrier consists of a double-barrier structure. We demonstrate that based on energy and momentum conservations, the transistors display oscillatory negative transconductance, as the gate can control the resonant tunneling probability between source and drain. With the inclusion of a realistic energy relaxation time of ∼0.1 ps, the double-barrier resonant tunneling transistor shows an enhancement of the tunneling current density and the negative transconductance feature is only slightly changed. We also find that the quantum-well drain is not able to completely screen the electric field imposed by the backgate bias as a result of limited density of states of two-dimensional systems.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4132-4134 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We investigated the current-voltage characteristics of double-barrier resonant tunneling diodes with areas ranged from ∼400 μm2 to ∼10 μm2 at a temperature of 300 and 4.2 K. For diodes of large areas, the characteristic negative differential resistance is always accompanied by a hysteresis and oscillation at several tens of MHz. However, for smaller diodes, the hysteresis and oscillation disappear, and the tunneling current shows a smooth transition between peak and valley. Our observation shows that the hysteresis can result from a load line effect. Were the hysteresis an intrinsic behavior, it should persist as the device area is reduced. We therefore conclude that the intrinsic bistability is yet to be experimentally confirmed.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2473-2475 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report experimental observation on the area and temperature dependence of the hysteresis in the current-voltage characteristics of double-barrier resonant tunneling diodes. Our observation shows that the hysteresis can simply result from a load line effect, since (1) the hysteresis will disappear when the the device area is reduced, and (2) the hysteresis becomes wider at lower temperatures. We compare the data with theoretical predictions from the intrinsic bistability picture, and obtain the criterion for observing current bistability.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 7
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1786-1788 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have observed an intensity-dependent shift in the exciton absorption features for a system of coupled quantum wells in which a thin barrier separates two wells of unequal widths. We found that for a fixed external bias on the sample, the normal quantum Stark shift of the excitons in the wells was suppressed when light of 1 μW/cm2 intensity was used to measure the absorption. The shift became systematically larger as the light intensity was decreased to as low as 100 pW/cm2. This extremely low-level nonlinearity may be due to internal fields that arise when free electrons and holes are separated within the coupled-well system.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 8
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2113-2115 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report the first observation of negative persistent photoconductivity at 4.2 K in an n-channel modulation doped GaAs/Al0.33Ga0.67As single heterostructure, where two-dimensional electrons have a mobility of ∼550 000 cm2/V s when density is ∼3.0×1011 cm−2. Based on extensive magnetotransport measurements, we conclude that the negative persistent photoconductivity effect comes from the time dependence of (1) the annihilation of two-dimensional electrons by photoexcited holes, and (2) the trapping and de-trapping of photoexcited electrons by shallow donors in doped Al0.33Ga0.67As. A model that quantitatively explains the nonexponential recovery time is presented.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 9
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2273-2275 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We reported the observation of steplike drain current and the negative transconductance, in a field-effect transistor. Our transistor has a double-quantum-well channel, and the quantum well close to the surface is depleted. We demonstrate that the novel transistor characteristics are from tunneling of electrons in between two-dimensional quantum wells. The observed current-voltage characteristic in gate tunneling current has a large peak-to-valley ratio (380–1), which is close to an idealized delta functionlike behavior.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 10
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 96-98 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An experimental realization and application of a new quantum transistor is reported herein. The conduction mechanism is a resonant-tunneling process between regions of two-dimensional density of states. As a result, the transistor displays new current-voltage characteristics. A static memory cell using a single transistor is demonstrated.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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