Publikationsdatum:
2012-11-21
Beschreibung:
Hopping transport and the Hall effect near the insulator–metal transition in electrochemically gated poly(3-hexylthiophene) transistors Nature Communications 3, 1210 (2012). doi:10.1038/ncomms2213 Authors: Shun Wang, Mingjing Ha, Michael Manno, C Daniel Frisbie & C Leighton
Digitale ISSN:
2041-1723
Thema:
Biologie
,
Chemie und Pharmazie
,
Allgemeine Naturwissenschaft
,
Physik
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