Publikationsdatum:
2016-12-01
Beschreibung:
In this paper, we demonstrated a floating-gate organic thin film transistor based nonvolatile memory, in which the core architecture was processed by a sequential three-step solution spin-coating method. The molecular semiconductor 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-Pen) distributing in the matrix of polymer poly(styrene) (PS), acting as the floating-gate and tunneling layer, respectively, was processed by one-step spin-coating from their blending solution. The effect of the proportion of TIPS-Pen in the matrix of PS on the memory performances of devices was researched. As a result, a good nonvolatile memory was achieved, with a memory window larger than 25 V, stable memory endurance property over 500 cycles and retention time longer than 5000 s with a high memory ratio larger than 10 2 , at an optimal proportion of TIPS-Pen in the matrix of PS.
Print ISSN:
0003-6951
Digitale ISSN:
1077-3118
Thema:
Physik
Permalink
