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  • Articles  (2)
  • Wiley-Blackwell  (2)
  • Electrical Engineering, Measurement and Control Technology  (2)
  • 1
    Electronic Resource
    Electronic Resource
    Experimental and theoretical aspects of electrical characteristics of Au/ZnSe/GaAs heterostructures (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 81-88 
    Details
    ISSN: 1057-9257
    Keywords: Semiconductor heterojunctions ; Admittance ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: We present results of a theoretical and experimental study of Au—ZnSe—GaAs heterostructures. In the theoretical part we report the band diagrams, charge densities and static I-V curves obtained from a detailed numerical analysis. In the experimental part we give the results for the static I-V curves and frequency-dependent admittance and impedance at different bias voltages for an Au—ZnSe—GaAs heterostructure with a ZnSe layer of 2.75 μm thickness. An explicit analysis of the data shows that the system can be represented by an equivalent circuit of two RC elements in series corresponding to the ZnSe—GaAs and Au—Se heterojunctions.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860030112
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Synthesis and characterisation of gallium antimonide nanoparticles: reaction between tris (trimethylsilyl)antimonide and gallium trichloride (1996)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 6 (1996), S. 185-189 
    Details
    ISSN: 1057-9257
    Keywords: semiconductor ; III-V materials ; GaSb ; nanocrystals ; SEM ; TEM ; electron diffraction ; dehalosilylation ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The reaction between GaCl3 and Sb(SiMe3)3 in a 1:1 mole ratio at 110°C in toluene leads to gallium antimonide, GaSb, which has been characterised by electron diffraction studies and EDX and elemental analyses. Microscopy studies (SEM and TEM) show the formation of nanocrystals with a predominant crystal size of 20-30 nm.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
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    Paper (German National Licenses)
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