Publication Date:
2019-07-13
Description:
Ground-based investigation of the crystal growth of II-VI semiconductor compounds, including CdTe, CdS, ZnTe, and ZnSe, by physical vapor transport in closed ampoules was performed. The crystal growth experimental process and supporting activities--preparation and heat treatment of starting materials, vapor partial pressure measurements, and transport rate measurements are reported. The results of crystal characterization, including microscopy, microstructure, optical transmission photoluminescence, synchrotron radiation topography, and chemical analysis by spark source mass spectrography, are also discussed.
Keywords:
Solid-State Physics
Type:
NASA-TM-111607
,
NAS 1.15:111607
,
AIAA Paper 94-0564
,
Aerospace Sciences Meeting and Exhibit; Jan 10, 1994 - Jan 13, 1994; Reno, NV; United States
Format:
text
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