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  • 1
    Publication Date: 2019-07-17
    Description: We report the investigation by photoluminescence lifetime measurements of the near-IR emissions from a series of chromium-doped ZnSe samples, correlated to their preparation conditions. The samples were polycrystalline or single crystals prepared by post growth diffusion doping or single crystals doped during growth by the Physical Vapor Transport method. Room temperature lifetime values between 6 and 8 microseconds were measured for samples with Cr (2+) concentrations from low 10 (exp 17) to high 10 (exp 18) per cubic centimeter range. Lifetime data taken down to 78 K was found to be rather temperature independent, reconfirming previous reports indicating a quantum yield of the corresponding emission of close to 100% at room temperature. A strong decrease in the room temperature lifetime was found for chromium concentrations higher than 10 (exp 19) per cubic centimeter.
    Keywords: Solid-State Physics
    Type: Crystal Growth and Epitaxy; Aug 13, 2000 - Aug 18, 2000; Vail, CO; United States
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  • 2
    Publication Date: 2019-07-17
    Description: We report the investigation by photoluminescence lifetime measurements of the near-IR emissions from a series of chromium-doped ZnSe samples, correlated to their preparation conditions. The samples were polycrystalline or single crystals prepared by post growth diffusion doping or single crystals doped during growth by the physical vapor transport method. Room temperature lifetime values between 6 and 8 micro seconds were measured for samples with Cr2+ from low 10(exp 17) to high 10(exp 18) / cubic cm range. Lifetime data taken down to 78 K was found to be rather temperature independent, reconfirming previous reports indicating a quantum yield of the corresponding emission of close to 100% at room temperature. A strong decrease in the room temperature lifetime was found for chromium concentrations higher than 10(exp 19) / cubic CM.
    Keywords: Solid-State Physics
    Type: 12th American Conference on Crystal Growth and Epitaxy; Aug 13, 2000 - Aug 18, 2000; Vail, CO; United States
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  • 3
    Publication Date: 2019-07-17
    Description: At temperatures above 1/2 T(sub m), the generation and movement of dislocations may result due to the load created by the weight of the crystal itself The deformation may be expected to increase the line defect density and may result in generation of low angle grain boundaries, especially in the regions of the crystal attached to the ampule. It has often been suspected that elimination of this effect in space can improve crystallinity of crystals grown under microgravity conditions, however, a direct experimental proof of such relation is still missing. In this work we have designed and built a system of in-situ optical detection and measurement of the mechanical deformations of a crystal wafer under its own weight, and studied the deformation effects as a function of temperature. The results of the measurements for ZnSe and ZnTe crystal wafers will be presented.
    Keywords: Solid-State Physics
    Type: Jul 18, 1999 - Jul 23, 1999; Denver, CO; United States
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