ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    facet.materialart.
    Unknown
    Effect of stress on electron relaxation times in n-type silicon (1971)
    In:  Other Sources
    Details
    Publication Date: 2011-08-16
    Description: Stress effects on electron relaxation time anisotropies in n-type Si, using high temperature piezoresistivity model for population transfer rates
    Keywords: PHYSICS, SOLID-STATE
    Type: ; YAL SOCIETY (
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 2
    facet.materialart.
    Unknown
    Heating rate controller for thermally stimulated conductivity and thermoluminescence measurements. (1972)
    In:  Other Sources
    Details
    Publication Date: 2011-08-16
    Description: A temperature controller is described which enables the temperature of a sample mounted on a cold finger to be varied linearly with time. Heating rates between 0.5 and 10 K/min can be achieved for temperatures between 90 and 300 K. Provision for terminating the sample heating at any temperature between these extremes is available. The temperature can be held at the terminating temperature or be reduced to the starting temperature in a matter of minutes. The controller has been used for thermally stimulated conductivity measurements and should be useful for thermoluminescence measurements as well.
    Keywords: INSTRUMENTATION AND PHOTOGRAPHY
    Type: Review of Scientific Instruments; 43; Feb. 197
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 3
    facet.materialart.
    Unknown
    Influence of oxygen-vacancy complex /A center/ on piezoresistance of n-type silicon. (1972)
    In:  Other Sources
    Details
    Publication Date: 2011-08-16
    Description: Changes in both magnitude and temperature dependence of the piezoresistance of electron-irradiated n-type silicon, induced by the latter's oxygen-vacancy complex (A center), are shown to be due to the fact that the presence of the A center causes the total conduction-band electron concentration to change with an applied stress. This change in electron concentration leads to an additional piezoresistance contribution that is expected to be important in certain many-valley semiconductors. This offers the possibility of tailoring the thermal variations of semiconductor mechanical sensors to more desirable values over limited temperature ranges.
    Keywords: PHYSICS, SOLID-STATE
    Type: Journal of Applied Physics; 43; Mar. 197
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 4
    facet.materialart.
    Unknown
    Piezoresistance and hole transport in beryllium-doped silicon. (1972)
    In:  Other Sources
    Details
    Publication Date: 2011-08-16
    Description: The resistivity and piezoresistance of p-type silicon doped with beryllium have been studied as a function of temperature, crystal orientation, and beryllium doping concentration. It is shown that the temperature coefficient of resistance can be varied and reduced to zero near room temperature by varying the beryllium doping level. Similarly, the magnitude of the piezoresistance gauge factor for beryllium-doped silicon is slightly larger than for silicon doped with a shallow acceptor impurity such as boron, while the temperature coefficient of piezoresistance is about the same for material containing these two dopants. These results are discussed in terms of a model for the piezoresistance of compensated p-type silicon.
    Keywords: PHYSICS, SOLID-STATE
    Type: Journal of Applied Physics; 43; July 197
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 5
    facet.materialart.
    Unknown
    Silicon surface damage due to gamma radiation. (1965)
    In:  Other Sources
    Details
    Publication Date: 2019-05-30
    Description: Silicon surface damage, discussing low energy gamma irradiation effect on bulk lifetime and recombination velocity
    Keywords: PHYSICS, SOLID-STATE
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 6
    facet.materialart.
    Unknown
    Wave packets and WKB theory in phase space (1986)
    In:  Other Sources
    Details
    Publication Date: 2019-06-28
    Description: A practical difficulty of traditional Wentzel-Kramer-Brillouin (WKB) theory is that it suffers from non-physical infinities at caustics. A theoretical difficulty is that it does not possess any reasonable covariance or invariance properties under transformations in phase space. It turns out that the solution of one of these problems also solves the other, and leads to a version of WKB theory in phase space. The new theory is most easily implemented by using wave packets.
    Keywords: PLASMA PHYSICS
    Type: Nagoya Univ. Statistical Plasma Physics: Proceedings of Workshop of US-Japan Joint Institute for Fusion Theory Program; p 8-13
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 7
    facet.materialart.
    Unknown
    Properties of TiO2 thin films and a study of the TiO2-GaAs interface (1977)
    In:  CASI
    Details
    Publication Date: 2019-06-27
    Description: Titanium dioxide (TiO2) films prepared by chemical vapor deposition were investigated in this study for the purpose of the application in the GaAs metal-insulator-semiconductor field-effect transistor. The degree of crystallization increases with the deposition temperature. The current-voltage study, utilizing an Al-TiO2-Al MIM structure, reveals that the d-c conduction through the TiO2 film is dominated by the bulk-limited Poole-Frenkel emission mechanism. The dependence of the resistivity of the TiO2 films on the deposition environment is also shown. The results of the capacitance-voltage study indicate that an inversion layer in an n-type substrate can be achieved in the MIS capacitor if the TiO2 films are deposited at a temperature higher than 275 C. A process of low temperature deposition followed by the pattern definition and a higher temperature annealing is suggested for device fabrications. A model, based on the assumption that the surface state densities are continuously distributed in energy within the forbidden band gap, is proposed to interpret the lack of an inversion layer in the Al-TiO2-GaAs MIS structure with the TiO2 films deposited at 200 C.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA-CR-155291
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 8
    facet.materialart.
    Unknown
    The electrical properties of 60 keV zinc ions implanted into semi-insulating gallium arsenide (1972)
    In:  CASI
    Details
    Publication Date: 2019-06-27
    Description: The electrical behavior of zinc ions implanted into chromium-doped semiinsulating gallium arsenide was investigated by measurements of the sheet resistivity and Hall effect. Room temperature implantations were performed using fluence values from 10 to the 12th to 10 to the 15th power/sq cm at 60 keV. The samples were annealed for 30 minutes in a nitrogen atmosphere up to 800 C in steps of 200 C and the effect of this annealing on the Hall effect and sheet resistivity was studied at room temperature using the Van der Pauw technique. The temperature dependence of sheet resistivity and mobility was measured from liquid nitrogen temperature to room temperature. Finally, a measurement of the implanted profile was obtained using a layer removal technique combined with the Hall effect and sheet resistivity measurements.
    Keywords: PHYSICS, SOLID-STATE
    Type: NASA-CR-112199 , SDL-15
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 9
    facet.materialart.
    Unknown
    Low temperature coefficient of resistance and high gage factor in beryllium-doped silicon (1974)
    In:  CASI
    Details
    Publication Date: 2019-06-27
    Description: The gage factor and resistivity of p-type silicon doped with beryllium was studied as a function of temperature, crystal orientation, and beryllium doping concentration. It was shown that the temperature coefficient of resistance can be varied and reduced to zero near room temperature by varying the beryllium doping level. Similarly, the magnitude of the piezoresistance gage factor for beryllium-doped silicon is slightly larger than for silicon doped with a shallow acceptor impurity such as boron, whereas the temperature coefficient of piezoresistance is about the same for material containing these two dopants. These results are discussed in terms of a model for the piezoresistance of compensated p-type silicon.
    Keywords: MATERIALS, NONMETALLIC
    Type: NASA-TN-D-7517 , L-9297
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 10
    facet.materialart.
    Unknown
    Influence of CO60 gamma irradiation on the bulk and surface recombination rates in silicon (1967)
    In:  CASI
    Details
    Publication Date: 2019-06-27
    Description: Influence of cobalt 60 gamma irradiation on bulk and surface recombination rates in n-type and p-type semiconductors
    Keywords: PHYSICS, SOLID-STATE
    Type: NASA-CR-84446 , SDL-6-588-1
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...