Publication Date:
2011-08-19
Description:
A process to pattern slots approximately 1.25 microns in width into 25-micron-thick W films that have been deposited onto flat or concave surfaces is discussed. A 25-micron-thick W film with a high degree of (100) orientation is chemically vapor deposited (CVD) onto a flat or concave Mo mandrel. A 5-micron-thick Al film is deposited onto the CVD W, followed by 2 microns of photoresist. On concave cathodes, XeCl2 laser ablation or X-ray lithography is used to pattern the photoresist, whereas on flat cathodes deep UV lithography can be used. The patterned photoresist serves as the mask in a Cl ion-beam-assisted etching (IBAE) process to pattern the Al. An alternative process is to deposit Al2O3 films onto the W and pattern the Al2O3 using laser ablation. The W film is then patterned to 3-6-micron slot widths using IBAE + ClF3 with the patterned Al or Al2O3 as the mask. Finally, a sputter deposition step is required to close up the slots to approximately 1 micron. The process described is capable of patterning concave dispenser cathodes to a controlled and precise porosity.
Keywords:
ELECTRONICS AND ELECTRICAL ENGINEERING
Type:
IEEE Transactions on Electron Devices (ISSN 0018-9383); 36; 158-168
Format:
text
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