Publication Date:
2019-06-28
Description:
Heterojunction Bipolar Transistor (HBT) technology has emerged as one of the most promising technologies for ultrahigh-speed integrated circuits. HBT circuits for digital and analog applications, data conversion, and power amplification have been realized, with speed performance well above 20 GHz. At Rockwell, a baseline AlGaAs/GaAs HBT technology has been established in a manufacturing facility. This paper describes the HBT technology, transistor characteristics, and HBT circuits for data acquisition and communication.
Keywords:
ELECTRONICS AND ELECTRICAL ENGINEERING
Type:
Idaho Univ., The 1992 4th NASA SERC Symposium on VLSI Design; 14 p
Format:
application/pdf
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