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  • Articles  (621)
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  • Articles  (621)
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  • 1
    Electronic Resource
    Electronic Resource
    Single-crystal Sn/Ge superlattices on Ge substrates: Growth and structural properties (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 875-877 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Short-period strained-layer α-Sn/Ge superlattices lattice matched to Ge(001) substrates have been synthesized for the first time. The thin, tetragonally distorted α-Sn layers are stabilized by a modified molecular beam epitaxy technique with large modulation of substrate temperature during growth. Optimization of growth conditions is achieved via in situ Auger electron spectroscopy and low-energy electron diffraction. This new kind of strained-layer superlattice is characterized by transmission electron microscopy, x-ray diffraction, and Raman scattering. Distinct superlattice effects are observed in the structural and phonon properties of the samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104264
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  • 2
    Electronic Resource
    Electronic Resource
    Novel relaxation process in strained Si/Ge superlattices grown on Ge (001) (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1496-1498 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new mode of misfit defect formation has been observed for the first time in high quality Si/Ge strained-layer superlattices grown by molecular beam epitaxy on Ge(001). In order to investigate the transition from coherent to incoherent growth we have studied a set of samples with a varying number of superlattice periods by transmission electron microscopy. High-resolution lattice imaging reveals that strain relaxation occurs through successive glide of 90° (a/6)〈211〉 Shockley partial dislocations on adjacent {111} planes. The resulting microtwins represent the only relaxation mechanism we observed in the samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103375
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  • 3
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy of short-period Si/Ge strained-layer superlattices on Ge substrates (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 448-450 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural investigations of high quality Si/Ge strained-layer superlattices (SLSs) on [001] oriented Ge substrates prepared by molecular beam epitaxy are presented. Cross-sectional transmission electron microscopy reveals that a defect-free superlattice is achieved for a structure composed of a 20-period sequence of 3 monolayers (ML) Si and 9 ML Ge. High-resolution lattice images and electron diffraction patterns show that the whole structure is matched to the Ge substrate. Experimental values for the tetragonal deformation of the Si layers within the SLS are in good agreement with theory. An equivalent sample containing 120 periods exceeds the critical thickness for pseudomorphic growth of the SLS and shows the formation of twin lamellae.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101871
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  • 4
    Electronic Resource
    Electronic Resource
    Realization of AlGaAs antidot arrays by pulsed laser interference gratings (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 1497-1499 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlGaAs antidot arrays with about 107 antidots are produced by single-shot interference processing with a pulsed high-power Nd:YAG laser system. We apply magnetotransport experiments and atomic force microscopy (AFM) to explore the electronic and geometric properties of the arrays. The size of the antidot arrays are 3 mm×3 mm and the period varies from 400 to 1000 nm. The dots are elliptic or circular and have diameters ranging from 255 to 690 nm. The magnetotransport experiments are performed at 1.5 K in van der Pauw contact configuration. The laser structuring leaves the two dimensional electron density nearly unchanged but decreases the mobility by a factor of about 30. Several maxima are detected in the low magnetic field magnetoresistivity which are discussed based on the geometric data determined by AFM. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365933
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  • 5
    Electronic Resource
    Electronic Resource
    Separately contacted electron-hole double layer in a GaAs/AlxGa1−xAs heterostructure (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3266-3268 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a method for creating closely spaced parallel two-dimensional electron and hole gases confined in 200 A(ring) GaAs wells separated by a 200 A(ring) wide AlxGa1−xAs barrier. Low-temperature ohmic contacts are made to both the electrons and holes, whose densities are individually adjustable between 1010/cm2 to greater than 1011/cm2. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112432
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  • 6
    Electronic Resource
    Electronic Resource
    Spatially resolved exciton trapping in a voltage-controlled lateral superlattice (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 154-156 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: With spatially resolved photoluminescence experiments we demonstrate voltage-controlled trapping of excitons in a submicron scale lateral potential superlattice imposed on a semiconductor quantum well. The potential modulation is achieved by two interdigitated field-effect electrodes on top of the sample surface. Both parallel and vertical electric field components strongly modify the optical properties of the quantum well. We show that the lateral modulation of the strength of the quantum confined Stark effect results in an effective lateral exciton potential that can be probed by spatially resolved measurements of the excitonic luminescence. We demonstrate that excitons may be confined to the regions of strongest vertical fields, in which the effective exciton energy is lowest. Spatial resolution of the observed photoluminescence signal allows for a qualitative understanding of the exciton transport and trapping process. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121740
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  • 7
    Electronic Resource
    Electronic Resource
    Single-electron transistor fabricated by focused laser beam-induced doping of a GaAs/AlGaAs heterostructure (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2135-2137 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A single-electron transistor has been fabricated by an optical fabrication method. A small dot, a source and drain reservoir, and in-plane gates are all built from the two-dimensional electron gas of an n-type GaAs/AlGaAs heterostructure. Laser-written p-doped lines are used to define this dot with a diameter of about 70 nm and to insulate it from the in-plane gates. Tunnel junctions connect the dot with source and drain. The in-plane gates are used to tune the tunnel junctions and to change the electrostatic potential of the dot. A large charging energy of 5 meV and clear Coulomb-blockade oscillations are observed at helium temperature, due to a small dot capacitance of about 3×10−17 F. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118969
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  • 8
    Electronic Resource
    Electronic Resource
    Commensurability effects in lateral surface-doped superlattices (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2175-2177 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We fabricate density-modulated two-dimensional electron systems by shallow compensation doping the donor layer of a modulation-doped heterostructure. Zinc acceptor atoms are diffused from the sample surface which is heated by a focused laser beam. Low-temperature magnetotransport experiments provide evidence that high-quality lateral surface superlattices can be fabricated. In weak periodic one-dimensional potentials, commensurability oscillations are recovered, whereas in strong periodic two-dimensional potentials the semiclassically expected antidot resistance resonances are found to dominate the low-field transport. Additionally, the homogeneity of the laser-induced doping is confirmed by magnetic focusing experiments. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1362283
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  • 9
    Electronic Resource
    Electronic Resource
    Miniband transport in vertical superlattice field-effect transistors (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1564-1566 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the nonequilibrium transport of two-dimensional electrons through a periodic potential. Our samples are fabricated using the cleaved-edge overgrowth technique to provide a vertical field-effect transistor with an undoped GaAs/AlGaAs superlattice channel orthogonal to the current flow. We find a pronounced negative differential resistance, the magnitude of which increases with increasing modulation strength. The data are qualitatively consistent with the Esaki–Tsu transport model in minibands, which we calculate for the given samples. We emphasize the significance of the two-dimensionality of the electron system and the gate to inhibit domain formation. Weak features in the source-drain current are attributed to Bloch-phonon resonances. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1390320
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  • 10
    Electronic Resource
    Electronic Resource
    Broadband semiconductor superlattice detector for THz radiation (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1673-1675 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a broadband GaAs/AlAs superlattice detector for THz radiation; a THz field reduces the current through a superlattice, which is carried by miniband electrons, due to modulation of the Bloch oscillations of the miniband electrons. We studied the detector response, by use of a free electron laser, in a large frequency range (5–12 THz). The responsivity showed strong minima at frequencies of infrared active phonons of the superlattice. A theoretical analysis of the detector delivers an understanding of the role of phonons and gives a characterization of the responsivity. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1352669
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