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  • Articles  (136)
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  • 1
    Electronic Resource
    Electronic Resource
    Improvement of trace aluminum determination by electrothermal atomic absorption spectrophotometry using phosphoric acid (1986)
    s.l. : American Chemical Society
    Analytical chemistry 58 (1986), S. 656-658 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac00294a040
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  • 2
    Electronic Resource
    Electronic Resource
    NOTES ON THE ANALYSIS OF EXPLOSIVES. (1901)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 23 (1901), S. 585-589 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja02034a004
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  • 3
    Electronic Resource
    Electronic Resource
    NOTES ON THE ANALYSIS OF DYNAMITE AND GELATINE-DYNAMITE. (1899)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 21 (1899), S. 425-431 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja02055a009
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  • 4
    Electronic Resource
    Electronic Resource
    CARBOXYMETHYLCELLULOSE (1952)
    s.l. : American Chemical Society
    Industrial & engineering chemistry 44 (1952), S. 2803-2812 
    Details
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ie50516a016
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  • 5
    Electronic Resource
    Electronic Resource
    Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperatures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1881-1883 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs layers grown by molecular beam epitaxy (MBE) at substrate temperatures between 200 and 300 °C were studied using transmission electron microscopy (TEM), x-ray diffraction, and electron paramagnetic resonance (EPR) techniques. High-resolution TEM cross-sectional images showed a high degree of crystalline perfection of these layers. For a layer grown at 200 °C and unannealed, x-ray diffraction revealed a 0.1% increase in the lattice parameter in comparison with bulk GaAs. For the same layer, EPR detected arsenic antisite defects with a concentration as high as 5×1018 cm−3. This is the first observation of antisite defects in MBE-grown GaAs. These results are related to off-stoichiometric, strongly As-rich growth, possible only at such low temperatures. These findings are of relevance to the specific electrical properties of low-temperature MBE-grown GaAs layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101229
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  • 6
    Electronic Resource
    Electronic Resource
    In situ determination of the surface roughness of diamond films using optical pyrometry (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 903-905 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial growth of diamond films in a microwave plasma reactor has been studied using in situ two-color infrared pyrometry. Analysis of the observed oscillations of the apparent temperature has yielded the substrate temperature and also the instantaneous film growth rate and rms surface roughness σ. Two distinct regimes of growth have been clearly identified: an initial period of rapidly increasing σ before the diamond nuclei coalesce, followed by a slower increase of σ with thickness as the continuous film grows further. The differing initial roughnesses and emissivities of Si and Mo substrates have been shown to have important effects on the growth of diamond. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120931
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  • 7
    Electronic Resource
    Electronic Resource
    Coherent millimeter-wave generation by heterodyne conversion in low-temperature-grown GaAs photoconductors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1480-1484 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analysis has been carried out of optical heterodyne conversion with an interdigitated-electrode photomixer made from low-temperature-grown (LTG) GaAs and pumped by two continuous-wave, frequency-offset pump lasers. The analytic prediction is in excellent agreement with the experimental results obtained recently on a photomixer having 1.0-μm-wide electrodes and gaps. The analysis predicts that a superior photomixer having 0.2-μm-wide electrodes and gaps would have a temperature-limited conversion efficiency of 2.0% at a low difference frequency, 1.6% at 94 GHz, and 0.5% at 300 GHz when connected to a broadband 100 Ω load resistance and pumped at hν=2.0 eV by a total optical power of 50 mW. The predicted 3-dB bandwidth (193 GHz) of this photomixer is limited by both the electron-hole recombination time (0.6 ps) of the LTG-GaAs material and the RC time constant (0.5 ps) of the photomixer circuit.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353222
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  • 8
    Electronic Resource
    Electronic Resource
    Atomic bonding in amorphous carbon alloys: A thermodynamic approach (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2954-2967 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The free energy model previously developed for the prediction of the bonding in amorphous Si-based alloys is extended here to amorphous carbon alloys, a-CxH1−x, containing carbon atoms with sp3 and sp2 hybridization. Predictions have been made for the bonds present in the alloys, with the case of "chemical'' ordering at T=0 K corresponding to phase separation into separate C (sp3) and C(sp2) regions. For T(approximately-greater-than)0 K phase separation is eliminated and there is no evidence for the clustering of graphitic carbon, indicating the importance of the configurational entropy in influencing the bonding in the alloys. Hydrogen atoms are predicted to bond preferentially to C (sp3) atoms for all T. The sp3/sp2 ratio is predicted to increase with increasing H content, as observed experimentally, and also with increasing T due to entropy effects. Predictions have been made for the distribution of bonds in tetrahedral C(sp3)- and planar C(sp2)=C(sp2)-centered units. It is found that essentially no aromatic or graphitic structures are present in typical alloys. The a-CxH1−x alloys have been proposed to consist of five amorphous components: diamondlike, graphitic, polymeric, olefinic, and mixed diamond–graphitic (d–g) components. It is predicted that the polymeric and mixed d–g components dominate in typical plasma-deposited alloy films while the mixed d–g component dominates in hydrogen-free a-C films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361292
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  • 9
    Electronic Resource
    Electronic Resource
    Optical absorption of amorphous-Si:H/amorphous-SixN1−x:H multilayers: Effects of interface alloying (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 475-478 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for the optical absorption of a-Si:H/a-SixN1−x :H multilayers has been developed which takes into account the effects of alloying in the interface regions between the a-Si:H and a-SixN1−x :H layers. Four different spatial variations of the film composition at the interfaces have been considered: abrupt, step, linear, and parabolic. The optical response of the interface regions is proposed to arise from Si-centered tetrahedra, containing both Si and N atoms. Calculations of the dielectric function of the multilayer using the appropriate effective medium approximation have indicated that alloying at the interfaces leads to a lower optical absorption and a broadening of the multilayer absorption edge as compared to multilayers in which interface alloying is ignored. However, interface alloying apparently does not contribute appreciably to the observed increase in the optical energy gap of the a-Si:H layer in the limit of decreasing layer thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340266
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  • 10
    Electronic Resource
    Electronic Resource
    Optical constants of an a-Si1−xCx:H film (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 582-587 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The real and imaginary parts n and k of the index of refraction of a carbon-rich hydrogenated amorphous silicon-carbon alloy film (a-Si1−xCx:H, x∼0.87) have been determined for photon energies between 1.5 and 4.75 eV from measurements of reflectance R and transmittance T. The optical energy gap parameter Eopt has been determined from the energy dependence of ε2=2nk, the imaginary part of the dielectric constant. Depending on assumptions involving the energy dependencies of valence- and conduction-band densities of states and optical matrix elements, values of Eopt ranging from 1.65 to 2.5 eV have been obtained for the as-deposited film (Td=250 °C). Independently of such assumptions, Eopt is observed to decrease to zero as the film is annealed. These results are consistent with enhanced tetrahedral coordination and demonstrate improved thermal stability for this silicon-carbon alloy film as compared to an hydrogenated amorphous carbon film. The density of the film increased from 1.51 to 1.88 g/cm3 with annealing up to 850 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336616
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