ISSN:
1057-9257
Schlagwort(e):
Semiconductor heterojunctions
;
Admittance
;
Chemistry
;
Polymer and Materials Science
Quelle:
Wiley InterScience Backfile Collection 1832-2000
Thema:
Elektrotechnik, Elektronik, Nachrichtentechnik
,
Physik
Notizen:
We present results of a theoretical and experimental study of Au—ZnSe—GaAs heterostructures. In the theoretical part we report the band diagrams, charge densities and static I-V curves obtained from a detailed numerical analysis. In the experimental part we give the results for the static I-V curves and frequency-dependent admittance and impedance at different bias voltages for an Au—ZnSe—GaAs heterostructure with a ZnSe layer of 2.75 μm thickness. An explicit analysis of the data shows that the system can be represented by an equivalent circuit of two RC elements in series corresponding to the ZnSe—GaAs and Au—Se heterojunctions.
Zusätzliches Material:
8 Ill.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1002/amo.860030112
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