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  • Articles  (52)
  • 1995-1999  (52)
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  • Articles  (52)
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  • 1
    Electronic Resource
    Electronic Resource
    Electron inelastic mean free path and stopping power modelling in alkali halides in the 50 eV–10 keV energy range (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6714-6721 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for calculating the electron inelastic mean free path and stopping power in insulators in the 50 eV–10 keV energy range is presented. Both valence and core electron contributions have been considered. The valence part has been estimated following the dielectric theory modified to include the energy gap; the core contribution has been evaluated on the basis of the classical binary encounter theory. Inelastic mean free path and stopping power calculations based on this model have been performed for several alkali halides: LiF, NaCl, KCl and CsI. They are compared to existing experimental data and Penn model's predictions for the mean free path and to Bethe's values for the stopping power; a fair agreement is found for incident electron energies higher than 100-200 eV. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361491
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  • 2
    Electronic Resource
    Electronic Resource
    A new technique for studying the Fano factor and the mean energy per ion pair in counting gases (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8892-8898 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method is presented for deriving the Fano factor, F, and the mean energy per ion pair, Wi, in counting gases. It is based on the technique of individual counting of single ionization electrons induced in low-pressure gas samples by soft x-ray photons. A correlation of the experimental data with a detailed simulation of the electron deposition and counting process permits the extraction of the Fano factor and the mean energy per ion pair values. We present data of F and Wi for C2H6 and Ar/C2H6 over the energy range of 100–1500 eV. The energy dependence of these parameters reflects the atomic level structure of the gases. We discuss in detail the accuracy of this technique and its advantages and limitations. Ways are proposed for improving the technique and for broadening the energy range. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362619
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  • 3
    Electronic Resource
    Electronic Resource
    Photoemission through thin dielectric coating films (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 466-479 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoemission through thin coating films was studied in the scope of protection of sensitive photocathodes. The transmission of low energy (∼1 eV) electrons was measured for a large number of dielectric films (LiF, NaF, CsF, NaI, MgF2, BaF2, SiO, SiO2, Al2O3, n-C36H74), evaporated in vacuum on CsI and CuI photocathodes. Some films like CsF, NaI and n-C36H74 were found to have a fairly large electron attenuation length, varying from about 20 to 100 Å at a maximum initial electron energy of 1 eV. A thin CsF layer deposited on top of CuI and Al photocathodes was found to significantly increase their quantum yield. An enhancement of the photoyield following exposure to water vapour was observed for alkali fluoride-coated photocathodes. We interpret this effect as a decrease of the electron affinity by about 0.3–0.4 eV, induced by adsorption of polarized H2O dipoles. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364082
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  • 4
    Electronic Resource
    Electronic Resource
    Field enhancement of the photoelectric and secondary electron emission from CsI (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2138-2145 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the electron emission from a CsI-coated multiwire cathode, induced by ultraviolet photons and electrons, in vacuum at high electric fields. We found an enhancement in quantum efficiency of a factor of 1.5 at 160 nm, 3 at 185 nm, and 25 above 200 nm, at a field of 500 kV/cm. At the short wavelengths the amplitude of the effect is a linear function of the square root of the field strength. The enhancement of the electron-induced secondary electron emission yield is dependent on the primary electron energy: for energies above 1 keV it varies by a factor of 2 to 10. A simple model of the field enhancement of the photoemission is suggested. Practical applications are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358791
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  • 5
    Electronic Resource
    Electronic Resource
    An improved model for ultraviolet- and x-ray-induced electron emission from CsI (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5841-5849 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A microscopic theoretical model is proposed for calculating the characteristics of ultraviolet photoemission and x-ray secondary electron emission induced from CsI photoconverters. This approach is based on a realistic picture of the basic interactions of photons and induced electrons within the material. Both differential and integral emission characteristics, such as energy spectra and quantum efficiencies, are estimated according to the model and are found to agree, in general, with experimental data. The model-calculated photoemission enhancement under high external electric fields is also considered and is fairly compatible with measured values. The applicability of the model in the field of radiation detectors incorporating solid photoconverters is discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371601
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  • 6
    Electronic Resource
    Electronic Resource
    Evidence for thin-film protection of visible photocathodes (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1008-1010 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: NaI and CsI protective coatings on visible cesium-antimony photocathodes have been studied. With NaI protective films the photocathodes are shown to withstand exposure to considerable doses of oxygen and dry air. This opens the way to their handling and operation in gas media. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117968
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  • 7
    Electronic Resource
    Electronic Resource
    Escape length of ultraviolet induced photoelectrons in alkali iodide and CsBr evaporated films: Measurements and modeling (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2890-2896 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The escape length of electrons photoinduced from thin CsI, KI, RbI, NaI, and CsBr evaporated films was measured in the 140–180 nm photon spectral range. Theoretical model predictions of the escape length value are in fair agreement with the experimental results. They vary between 10 and 40 nm, the highest values being for CsI, RbI and CsBr. For CsI, measured and calculated ultraviolet-induced escape length values are consistent with that determined from x-ray photoemission quantum yield data. Post-evaporation annealing of the films had no major impact on the measured electron transport properties. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368395
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  • 8
    Electronic Resource
    Electronic Resource
    Fano factor and the mean energy per ion pair in counting gases, at low x-ray energies (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 871-877 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mean energy per ion-pair (Wi) and the Fano factor (F) are provided with high accuracy (2% and 3%-4%, respectively), in C2H6, C3H8, i-C4H10, CH4, DME, Ar/C2H6(20:80), Ar/i-C4H10(20:80) Ar/DME (20:80) and Ar/Xe/i-C4H10(66.6/16.7/16.7), in the x-ray energy range of 0.11–1.5 keV. These parameters were extracted from precise measurements of the number and temporal distribution of x-ray induced electrons, accompanied by extended simulations of the detection process. A decrease in these parameters with increasing x-ray energy was observed, accompanied by sharp increases at x-ray energies just above some atomic shells. The effect is discussed in relation to Auger electron emission. A Penning process in Ar/C2H6(20:80) and Ar/i-C4H10 (20:80) is observed on the basis of comparative measurements of Wi and F in these mixtures and in the pure hydrocarbons. Ways are proposed for further improving the accuracy provided by the electron counting technique to better than 1%. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365787
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  • 9
    Electronic Resource
    Electronic Resource
    Ultraviolet photoabsorption measurements in alkali iodide and caesium bromide evaporated films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7896-7899 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultraviolet–photon absorption constants were measured for thin CsI, KI, RbI, NaI and CsBr evaporated films, in the 140–200 nm spectral range. The constant measured for CsI is consistent with literature data; the absorption data for the other materials are given here for the first time. The absorption lengths for all materials investigated vary between 10 and 40 nm. Post-evaporation thermal treatment of the films, known to enhance the photoemission properties of CsI, NaI and CsBr films, had no effect on their photoabsorption properties. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367967
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  • 10
    Electronic Resource
    Electronic Resource
    Absolute photoyield from chemical vapor-deposited diamond and diamond-like carbon films in the UV (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3446-3448 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The absolute photoyields of chemical vapor deposited (CVD) diamond and amorphous hydrogen-free diamondlike carbon (DLC) films, in the range of 140–300 nm, are reported. CVD diamond films exhibit a large photoyield, of a few percent in the range 140–180 nm. DLC films have a 20–50 times lower yield. Post growth hydrogenation is found to substantially increase the photoyield of CVD diamond films. We discuss the applicability of these films as UV photocathodes coupled to electron multipliers based on gaseous charge multiplication. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119197
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