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  • 1
    Electronic Resource
    Electronic Resource
    Atomic layer epitaxy and molecular beam epitaxy of CdTe/MnTe superlattices: A structural and optical study (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4300-4308 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic layer epitaxy (ALE) is investigated together with conventional molecular beam epitaxy (MBE) for the growth of CdTe/MnTe superlattices. A systematic structural and magneto-optical study demonstrates that: (i) all Mn atoms incident on the surface get incorporated; however, when a quantity superior or equal to 1 monolayer of Mn is sent onto the surface per ALE cycle, the growth front roughens, leading to the formation of MnTe islands, (ii) optimized atomic layer epitaxy allows us to obtain at 280 °C CdTe/MnTe superlattices with a better control than in conventional MBE, but does not prevent the exchange between Cd and Mn atoms from occurring at the interfaces, (iii) low temperature ALE (200 °C and lower) seems to be a promising way of obtaining more abrupt interfaces. A precise value of the ratio of the elastic coefficients 2c12/c11 is otherwise inferred through this study for zincblende MnTe (1.12). © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368648
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  • 2
    Electronic Resource
    Electronic Resource
    Thermal conductivity of thin metallic films measured by photothermal profile analysis (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 1510-1513 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Thermal conductivity of nickel and gold films on quartz (thickness 0.4–8 μm) was measured by a modulated thermoreflectance technique recording the surface temperature profile. Model calculations predict an optimum frequency for measuring thermal transport within the film. Measurements on films with various thicknesses reveal a thermal conductivity close to the bulk value for nickel while gold films exhibit a reduced conductivity with decreasing film thickness. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147638
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  • 3
    Electronic Resource
    Electronic Resource
    Atomic layer epitaxy of CdTe and MnTe (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3035-3041 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic deposition techniques are investigated for binary semiconductors of the telluride family, namely CdTe and MnTe. An original method for directly determining the CdTe atomic layer epitaxy (ALE) growth rate—in monolayers/cycle—is proposed, consisting in monitoring the reflection high-energy electron diffraction (RHEED) sublimation intensity oscillations of an ALE grown CdTe layer deposited on a MgTe buffer layer. The ALE CdTe autoregulated growth rate at 0.5 monolayer/cycle (in the substrate temperature domain between 260 and 290 °C) is accounted for on the basis of an atomic model which relies on the alternating c(2×2) Cd and (2×1) Te surface reconstructions during the ALE cycle. RHEED studies on MnTe atomic deposition, together with x-ray diffraction and transmission electron microscopy on ALE grown CdTe/MnTe superlattices reveal that all deposited Mn atoms are incorporated so that no autoregulated growth can be achieved. Furthermore, less than one or just one monolayer of Mn must be sent on the surface per ALE cycle to obtain well controlled superlattices with abrupt interfaces. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361243
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  • 4
    Electronic Resource
    Electronic Resource
    Thermal wave imaging of electrically heated microstructures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2013-2018 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermoreflectance technique is applied for imaging electric current distributions and thermal transfer in a temperature reference resistor heated by an alternating current. High-frequency scans (30 kHz) allow imaging of the current density distribution in conducting strips of the resistor while scans of amplitude and phase of the surface temperature variation at lower frequencies reveal plane, cylindrical, and spherical thermal waves. We investigate wave dimensionality as a function of heating geometry and thermal length, and present a simple method allowing a quantitative thermal analysis by exploiting the phase profile of cylindrical thermal waves. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363094
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  • 5
    Electronic Resource
    Electronic Resource
    CdTe/MgTe heterostructures: Growth by atomic layer epitaxy and determination of MgTe parameters (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6257-6265 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic layer epitaxy (ALE) is investigated for the binary semiconductor MgTe. Reflection high-energy electron-diffraction studies on MgTe atomic deposition, together with x-ray diffraction, high-resolution transmission electron microscopy, and photoluminescence experiments on ALE-grown CdTe/MgTe superlattices are reported. They reveal that an autoregulated growth at 0.7±0.1 MgTe monolayer/ALE cycle can be achieved in a substrate temperature range between 260 and 300°C. New values of the zinc-blende MgTe lattice parameter, aMgTe=6.420 ±0.005 A(ring), of the ratio of the elastic coefficients 2c12c11 (MgTe)=1.06, and of the 300 K MgTe band gap, EG=3.5 eV, are obtained by correlating x-ray-diffraction and optical results. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363714
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  • 6
    Electronic Resource
    Electronic Resource
    Thermal wave propagation in thin films on substrates (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5266-5269 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple dispersion equation for surface thermal waves propagating along a solid surface covered with a thin film of higher thermal conductivity is presented. It is shown to describe well phase measurements with a photothermal microscope carried out on metal films on glass substrates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359702
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  • 7
    Electronic Resource
    Electronic Resource
    Measuring local thermal conductivity in polycrystalline diamond with a high resolution photothermal microscope (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2966-2972 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A photothermal microscope that provides micrometer lateral and submicrometer depth resolution was designed. Thermal conductivity measurements with modulation frequencies up to 12 MHz on single grains in polycrystalline diamond demonstrate its lateral resolution power even for a highly conducting material. Measured conductivities strongly depend on the averaged volume and values up to 2200 W/mK are found in the high frequency limit where the properties inside a grain are sampled. The capability of the instrument to measure thermal parameters on thin films is demonstrated for gold films evaporated on quartz with a thickness ranging from 20 to 1500 nm. Measurements reveal a strong thickness dependence for both thin film conductivity and the contact resistance between film and substrate. Thermal conductivity decreases monotonically from 230 to 30 W/mK whereas the contact resistance rises from 2×10−7 to 8×10−6 m2K/W with decreasing film thickness. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364329
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  • 8
    Electronic Resource
    Electronic Resource
    Quantitative interfacial profiles in CdTe/Mn(Mg)Te heterostructures (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 756-764 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured by high resolution transmission electron microscopy (HRTEM) the width of interfaces in two II–VI heterostructures: CdTe/MnTe and CdTe/MgTe, as a function of the growth mode. A critical review of the different parameters involved in the direct determination of the chemical profile by HRTEM enables us to precisely determine the sensitivity and accuracy of the methods on these particular materials. The measured interface width is of the order of 2.5–3 monolayers (ML) and is compatible with an exchange mechanism involving the monolayer being grown and the last deposited monolayer. Several growth procedures were compared: conventional molecular beam epitaxy and atomic layer epitaxy (ALE). In the case of saturated and oversaturated ALE the inverse MnTe/CdTe interface is no longer planar. A destabilization of the growth front occurs when one or more Mn monolayers per cycle are deposited, through the formation of MnTe islands. Thermal interdiffusion seems to be negligible in the case of Mn. The present HRTEM values for the interface widths extend the results obtained by magneto-optical measurements to higher concentration values and confirm the exchange mechanism. The higher value obtained by x-ray reflectivity (4.7 ML) is explained by the large difference of the average volume on which the measurement is performed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368134
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  • 9
    Electronic Resource
    Electronic Resource
    Large and small angle x-ray scattering studies of CdTe/MgTe superlattices (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1951-1957 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed large and small angle x-ray scattering measurements on CdTe/MgTe superlattices. The individual thicknesses of the CdTe and MgTe layers, together with the period dispersion and the crystallographic quality of the stacking, were extracted from large-angle x-ray diffraction. The Fresnel optical method and the distorted wave Born approximation were used to analyze the small angle x-ray scattering data. Specular reflectivity shows that the interface roughness is quite large for the two CdTe/MgTe superlattices grown either by conventional molecular beam epitaxy or by atomic layer epitaxy with however in the latter case a strong asymmetry between the direct and inverted interfaces. The effective MgTe concentration is determined from the refractive index. A model of correlated interface profiles is successfully used to simulate the diffuse scattering, and to gain access to the lateral correlation length of the roughness (Λ(parallel)=1500±750 Å for both samples); moreover, we demonstrate that the layers are almost completely correlated over the sample thickness in the growth direction. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370992
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  • 10
    Electronic Resource
    Electronic Resource
    Strain-balanced Si/SiGe short period superlattices: Disruption of the surface crosshatch (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 845-849 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effects of inserting Si/Si0.6Ge0.4 strain-balanced superlattices (SLs) into Si0.8Ge0.2 (001) virtual substrates. The SiGe SL layer thickness chosen was larger than the critical thickness for elastic relaxation and generated numerous hemicylindrical features oriented along the 〈100〉 directions. These features lead, when covered by Si0.8Ge0.2, to a disruption of the well-ordered surface crosshatch along the 〈110〉 directions, and to a significant lowering of the surface roughness. There is also evidence for some filtering of the threading dislocations by the SL. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370813
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