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  • silicon dioxide  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Journal of sol gel science and technology 8 (1997), S. 465-469 
    ISSN: 1573-4846
    Keywords: β-chloroethylsilsesquioxane ; β-chloroethyltrichlorosilane ; spin-on glass ; thermal conversion ; dielectric films ; silicon dioxide
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The hydrolytic generation of SiO2 films from chlorosilanes or alkoxysilanes is interrupted by incorporating labile organic groups which stop SiO2 formation at a processable prepolymer stage. The monomers for the prepolymer have electron withdrawing substituents in the β -position. The organic groups are removed from the prepolymer at low temperature, extruding ethylene. The formation of SiO2 proceeds by intramolecular condensation of the electronegative substituents which are now in a hydrolytically unstable bond with silicon and hydroxyl groups or ambient moisture. Films of the prepolymer spun onto silicon wafers are converted into uniform SiO2-rich films at temperatures between 150–400°C.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Journal of sol gel science and technology 8 (1997), S. 465-469 
    ISSN: 1573-4846
    Keywords: β-chloroethylsilsesquioxane ; β-chloroethyltrichlorosilane ; spin-on glass ; thermal conversion ; dielectric films ; silicon dioxide
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The hydrolytic generation of SiO2 films from chlorosilanes or alkoxysilanes is interrupted by incorporating labile organic groups which stop SiO2 formation at a processable prepolymer stage. The monomers for the prepolymer have electron withdrawing substituents in the β-position. The organic groups are removed from the prepolymer at low temperature, extruding ethylene. The formation of SiO2 proceeds by intramolecular condensation of the electronegative substituents which are now in a hydrolytically unstable bond with silicon and hydroxyl groups or ambient moisture. Films of the prepolymer spun onto silicon wafers are converted into uniform SiO2-rich films at temperatures between 150–400°C.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
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