ISSN:
0142-2421
Keywords:
X-ray technique for structure analysis
;
depth profiling
;
nanocluster
;
self-diffusion in metals
;
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Physics
Notes:
Results obtained from scanning transmission electron microscopy combined with energy-dispersive X-ray imaging (EDX) and from Rutherford backscattering spectroscopy (RBS) of implanted and multilayered structures are compared in order to demonstrate the depth profiling capabilities of both analysis methods, especially at interfaces. Typical samples for dilute and concentrated systems are compared. The dilute system is represented by Ge nano-clusters in an amorphous SiO2 matrix on a Si substrate produced by ion implantation and subsequent annealing. The concentrated system of alternating Ag-Al multilayers (typical thickness ∽200 nm) is produced by evaporation on Si substrates under high vacuum conditions. A significant advantage of STEM-EDX is the two-dimensional mapping and depth profiling of light and heavier elements in heavy-Z substrates (depth scale in nanometres) without the lack of a deteriorating depth resolution at increasing depth, as happens in RBS. © 1998 John Wiley & Sons, Ltd.
Additional Material:
9 Ill.
Type of Medium:
Electronic Resource
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