ISSN:
1572-8986
Keywords:
Plasma etching
;
ECR plasmas
;
rf-biasing
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Technology
Notes:
Abstract Electron cyclotron resonance (ECR) plasma etching with additional rf-biasing produces etch rates ≥ 2,500 A/min for InGaP and AlInP in CH4/H2/Ar. These rates are an order of magnitude or much higher than for reactive ion etching conditions (RIE) carried out in the same reactor. N2 addition to CH4/H2/Ar can enhance the InGaP etch rates at low flow rates, while at higher concentrations it provides an etch-stop reaction. The InGaP and AlInP etched under ECR conditions have somewhat rougher morphologies and different stoichiometries up to ≈200 Å from the sur face relative to the RIE samples.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01447151
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